DE3852370T2 - Flankenstruktur aus organischem Material. - Google Patents

Flankenstruktur aus organischem Material.

Info

Publication number
DE3852370T2
DE3852370T2 DE19883852370 DE3852370T DE3852370T2 DE 3852370 T2 DE3852370 T2 DE 3852370T2 DE 19883852370 DE19883852370 DE 19883852370 DE 3852370 T DE3852370 T DE 3852370T DE 3852370 T2 DE3852370 T2 DE 3852370T2
Authority
DE
Germany
Prior art keywords
organic material
structure made
flank structure
flank
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19883852370
Other languages
English (en)
Other versions
DE3852370D1 (de
Inventor
William J Cote
Michael L Kerbaugh
Donald M Kenney
Michael A Leach
Jeffrey A Robinson
Robert W Sweetser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE3852370D1 publication Critical patent/DE3852370D1/de
Publication of DE3852370T2 publication Critical patent/DE3852370T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
DE19883852370 1987-10-30 1988-09-22 Flankenstruktur aus organischem Material. Expired - Fee Related DE3852370T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11496087A 1987-10-30 1987-10-30

Publications (2)

Publication Number Publication Date
DE3852370D1 DE3852370D1 (de) 1995-01-19
DE3852370T2 true DE3852370T2 (de) 1995-05-24

Family

ID=22358518

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883852370 Expired - Fee Related DE3852370T2 (de) 1987-10-30 1988-09-22 Flankenstruktur aus organischem Material.

Country Status (3)

Country Link
EP (1) EP0313814B1 (de)
JP (1) JPH0626202B2 (de)
DE (1) DE3852370T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5651857A (en) * 1995-09-08 1997-07-29 International Business Machines Corporation Sidewall spacer using an overhang
DE19945140B4 (de) * 1999-09-21 2006-02-02 Infineon Technologies Ag Verfahren zur Herstellung einer Maskenschicht mit Öffnungen verkleinerter Breite
DE10142590A1 (de) 2001-08-31 2003-04-03 Infineon Technologies Ag Verfahren zur Seitenwandverstärkung von Resiststrukturen und zur Herstellung von Strukturen mit reduzierter Strukturgröße
US7776744B2 (en) * 2005-09-01 2010-08-17 Micron Technology, Inc. Pitch multiplication spacers and methods of forming the same
US7923373B2 (en) 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
WO2008149989A1 (ja) * 2007-06-08 2008-12-11 Tokyo Electron Limited パターニング方法
KR100965011B1 (ko) * 2007-09-03 2010-06-21 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성방법
JP2009088085A (ja) * 2007-09-28 2009-04-23 Tokyo Electron Ltd 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びプログラム記憶媒体
TWI493598B (zh) * 2007-10-26 2015-07-21 Applied Materials Inc 利用光阻模板遮罩的倍頻方法
JP6019966B2 (ja) * 2012-09-10 2016-11-02 大日本印刷株式会社 パターン形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2003660A (en) * 1977-08-19 1979-03-14 Plessey Co Ltd Deposition of material on a substrate
DE3242113A1 (de) * 1982-11-13 1984-05-24 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren zur herstellung einer duennen dielektrischen isolation in einem siliciumhalbleiterkoerper
JPS59163829A (ja) * 1983-03-08 1984-09-14 Matsushita Electronics Corp パタ−ン形成方法
JPS6273633A (ja) * 1985-09-26 1987-04-04 Mitsubishi Electric Corp パタ−ン形成方法
JPS62106456A (ja) * 1985-11-01 1987-05-16 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH01124219A (ja) 1989-05-17
JPH0626202B2 (ja) 1994-04-06
EP0313814A3 (de) 1991-01-02
EP0313814A2 (de) 1989-05-03
DE3852370D1 (de) 1995-01-19
EP0313814B1 (de) 1994-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee