DE2216658A1 - Halbleiterschaltelement mit Dielektrikum - Google Patents

Halbleiterschaltelement mit Dielektrikum

Info

Publication number
DE2216658A1
DE2216658A1 DE19722216658 DE2216658A DE2216658A1 DE 2216658 A1 DE2216658 A1 DE 2216658A1 DE 19722216658 DE19722216658 DE 19722216658 DE 2216658 A DE2216658 A DE 2216658A DE 2216658 A1 DE2216658 A1 DE 2216658A1
Authority
DE
Germany
Prior art keywords
layer
silicon oxide
switching element
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19722216658
Other languages
German (de)
English (en)
Inventor
J G Swanson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of DE2216658A1 publication Critical patent/DE2216658A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/049Equivalence and options
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/118Oxide films
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/12Photocathodes-Cs coated and solar cell
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/15Silicon on sapphire SOS

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
DE19722216658 1971-04-09 1972-04-07 Halbleiterschaltelement mit Dielektrikum Pending DE2216658A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13264371A 1971-04-09 1971-04-09

Publications (1)

Publication Number Publication Date
DE2216658A1 true DE2216658A1 (de) 1972-10-19

Family

ID=22454952

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722216658 Pending DE2216658A1 (de) 1971-04-09 1972-04-07 Halbleiterschaltelement mit Dielektrikum

Country Status (8)

Country Link
US (1) US3710205A (https=)
BE (1) BE781779A (https=)
CA (1) CA949857A (https=)
DE (1) DE2216658A1 (https=)
FR (1) FR2132717B1 (https=)
GB (1) GB1377564A (https=)
IT (1) IT951223B (https=)
SE (1) SE375882B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2428373C2 (de) * 1974-06-12 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von weichlötbaren Anschlußkontakten auf einer Halbleiteranordnung
DE2432544C3 (de) * 1974-07-04 1978-11-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Als Halbleiterschaltung ausgebildetes Bauelement mit einem dielektrischen Träger sowie Verfahren zu seiner Herstellung
DE3061383D1 (en) * 1979-02-19 1983-01-27 Fujitsu Ltd Semiconductor device and method for manufacturing the same
JPS56161676A (en) 1980-05-16 1981-12-12 Japan Electronic Ind Dev Assoc<Jeida> Electrode structure for thin film transistor
GB2081018B (en) * 1980-07-31 1985-06-26 Suwa Seikosha Kk Active matrix assembly for display device
DE3504234A1 (de) * 1984-09-06 1986-03-13 Siemens AG, 1000 Berlin und 8000 München Feldeffekt-halbleiterbauelement
US5034789A (en) * 1988-11-21 1991-07-23 Harris Corporation Dielectric isolation for SOI island side wall for reducing leakage current
AU3373297A (en) * 1996-06-17 1998-01-07 Mercury Diagnostics Inc. Electrochemical test device and related methods
US7115991B1 (en) * 2001-10-22 2006-10-03 Lsi Logic Corporation Method for creating barriers for copper diffusion
US6998343B1 (en) 2003-11-24 2006-02-14 Lsi Logic Corporation Method for creating barrier layers for copper diffusion

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE557975A (https=) * 1956-06-04 1957-11-30
US3282711A (en) * 1959-03-27 1966-11-01 Westinghouse Electric Corp Preshaped two-phase glass ceramic body and process for preparing the same
FR1400657A (fr) * 1963-05-21 1965-05-28 Union Carbide Corp Boyaux pour aliments et procédés pour les produire
FR1489951A (fr) * 1965-07-30 1967-07-28 Nippon Electric Co Dispositifs semi-conducteurs comportant un revêtement diélectrique stable
US3505571A (en) * 1965-09-30 1970-04-07 Gen Electric Glass covered semiconductor device
US3560280A (en) * 1965-11-17 1971-02-02 Hitachi Ltd Method of selective removal of oxide coatings in the manufacture of semiconductor devices
US3535133A (en) * 1968-04-24 1970-10-20 Transitron Electronic Corp Alkali-free electronic glass and method of manufacture
US3632432A (en) * 1969-05-21 1972-01-04 Continental Device Corp Glass-coated semiconductor

Also Published As

Publication number Publication date
CA949857A (en) 1974-06-25
GB1377564A (en) 1974-12-18
FR2132717A1 (https=) 1972-11-24
FR2132717B1 (https=) 1977-12-23
BE781779A (fr) 1972-10-09
SE375882B (https=) 1975-04-28
IT951223B (it) 1973-06-30
US3710205A (en) 1973-01-09

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Legal Events

Date Code Title Description
OD Request for examination
OHW Rejection