BE781779A - Composants electroniques ayant une stabilite ionique amelioree - Google Patents

Composants electroniques ayant une stabilite ionique amelioree

Info

Publication number
BE781779A
BE781779A BE781779A BE781779A BE781779A BE 781779 A BE781779 A BE 781779A BE 781779 A BE781779 A BE 781779A BE 781779 A BE781779 A BE 781779A BE 781779 A BE781779 A BE 781779A
Authority
BE
Belgium
Prior art keywords
electronic components
improved ionic
ionic stability
stability
improved
Prior art date
Application number
BE781779A
Other languages
English (en)
French (fr)
Inventor
J G Swanson
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of BE781779A publication Critical patent/BE781779A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
BE781779A 1971-04-09 1972-04-07 Composants electroniques ayant une stabilite ionique amelioree BE781779A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13264371A 1971-04-09 1971-04-09

Publications (1)

Publication Number Publication Date
BE781779A true BE781779A (fr) 1972-10-09

Family

ID=22454952

Family Applications (1)

Application Number Title Priority Date Filing Date
BE781779A BE781779A (fr) 1971-04-09 1972-04-07 Composants electroniques ayant une stabilite ionique amelioree

Country Status (8)

Country Link
US (1) US3710205A (https=)
BE (1) BE781779A (https=)
CA (1) CA949857A (https=)
DE (1) DE2216658A1 (https=)
FR (1) FR2132717B1 (https=)
GB (1) GB1377564A (https=)
IT (1) IT951223B (https=)
SE (1) SE375882B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2428373C2 (de) * 1974-06-12 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von weichlötbaren Anschlußkontakten auf einer Halbleiteranordnung
DE2432544C3 (de) * 1974-07-04 1978-11-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Als Halbleiterschaltung ausgebildetes Bauelement mit einem dielektrischen Träger sowie Verfahren zu seiner Herstellung
DE3061383D1 (en) * 1979-02-19 1983-01-27 Fujitsu Ltd Semiconductor device and method for manufacturing the same
JPS56161676A (en) 1980-05-16 1981-12-12 Japan Electronic Ind Dev Assoc<Jeida> Electrode structure for thin film transistor
GB2081018B (en) * 1980-07-31 1985-06-26 Suwa Seikosha Kk Active matrix assembly for display device
DE3504234A1 (de) * 1984-09-06 1986-03-13 Siemens AG, 1000 Berlin und 8000 München Feldeffekt-halbleiterbauelement
US5034789A (en) * 1988-11-21 1991-07-23 Harris Corporation Dielectric isolation for SOI island side wall for reducing leakage current
AU3373297A (en) * 1996-06-17 1998-01-07 Mercury Diagnostics Inc. Electrochemical test device and related methods
US7115991B1 (en) * 2001-10-22 2006-10-03 Lsi Logic Corporation Method for creating barriers for copper diffusion
US6998343B1 (en) 2003-11-24 2006-02-14 Lsi Logic Corporation Method for creating barrier layers for copper diffusion

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE557975A (https=) * 1956-06-04 1957-11-30
US3282711A (en) * 1959-03-27 1966-11-01 Westinghouse Electric Corp Preshaped two-phase glass ceramic body and process for preparing the same
FR1400657A (fr) * 1963-05-21 1965-05-28 Union Carbide Corp Boyaux pour aliments et procédés pour les produire
FR1489951A (fr) * 1965-07-30 1967-07-28 Nippon Electric Co Dispositifs semi-conducteurs comportant un revêtement diélectrique stable
US3505571A (en) * 1965-09-30 1970-04-07 Gen Electric Glass covered semiconductor device
US3560280A (en) * 1965-11-17 1971-02-02 Hitachi Ltd Method of selective removal of oxide coatings in the manufacture of semiconductor devices
US3535133A (en) * 1968-04-24 1970-10-20 Transitron Electronic Corp Alkali-free electronic glass and method of manufacture
US3632432A (en) * 1969-05-21 1972-01-04 Continental Device Corp Glass-coated semiconductor

Also Published As

Publication number Publication date
CA949857A (en) 1974-06-25
GB1377564A (en) 1974-12-18
FR2132717A1 (https=) 1972-11-24
FR2132717B1 (https=) 1977-12-23
SE375882B (https=) 1975-04-28
IT951223B (it) 1973-06-30
DE2216658A1 (de) 1972-10-19
US3710205A (en) 1973-01-09

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