CA949857A - Electronic components having improved ionic stability - Google Patents

Electronic components having improved ionic stability

Info

Publication number
CA949857A
CA949857A CA129,013A CA129013A CA949857A CA 949857 A CA949857 A CA 949857A CA 129013 A CA129013 A CA 129013A CA 949857 A CA949857 A CA 949857A
Authority
CA
Canada
Prior art keywords
electronic components
improved ionic
ionic stability
stability
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA129,013A
Other languages
English (en)
Other versions
CA129013S (en
Inventor
John G. Swanson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Application granted granted Critical
Publication of CA949857A publication Critical patent/CA949857A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
CA129,013A 1971-04-09 1971-12-01 Electronic components having improved ionic stability Expired CA949857A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13264371A 1971-04-09 1971-04-09

Publications (1)

Publication Number Publication Date
CA949857A true CA949857A (en) 1974-06-25

Family

ID=22454952

Family Applications (1)

Application Number Title Priority Date Filing Date
CA129,013A Expired CA949857A (en) 1971-04-09 1971-12-01 Electronic components having improved ionic stability

Country Status (8)

Country Link
US (1) US3710205A (https=)
BE (1) BE781779A (https=)
CA (1) CA949857A (https=)
DE (1) DE2216658A1 (https=)
FR (1) FR2132717B1 (https=)
GB (1) GB1377564A (https=)
IT (1) IT951223B (https=)
SE (1) SE375882B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2428373C2 (de) * 1974-06-12 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von weichlötbaren Anschlußkontakten auf einer Halbleiteranordnung
DE2432544C3 (de) * 1974-07-04 1978-11-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Als Halbleiterschaltung ausgebildetes Bauelement mit einem dielektrischen Träger sowie Verfahren zu seiner Herstellung
DE3061383D1 (en) * 1979-02-19 1983-01-27 Fujitsu Ltd Semiconductor device and method for manufacturing the same
JPS56161676A (en) 1980-05-16 1981-12-12 Japan Electronic Ind Dev Assoc<Jeida> Electrode structure for thin film transistor
GB2081018B (en) * 1980-07-31 1985-06-26 Suwa Seikosha Kk Active matrix assembly for display device
DE3504234A1 (de) * 1984-09-06 1986-03-13 Siemens AG, 1000 Berlin und 8000 München Feldeffekt-halbleiterbauelement
US5034789A (en) * 1988-11-21 1991-07-23 Harris Corporation Dielectric isolation for SOI island side wall for reducing leakage current
AU3373297A (en) * 1996-06-17 1998-01-07 Mercury Diagnostics Inc. Electrochemical test device and related methods
US7115991B1 (en) * 2001-10-22 2006-10-03 Lsi Logic Corporation Method for creating barriers for copper diffusion
US6998343B1 (en) 2003-11-24 2006-02-14 Lsi Logic Corporation Method for creating barrier layers for copper diffusion

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE557975A (https=) * 1956-06-04 1957-11-30
US3282711A (en) * 1959-03-27 1966-11-01 Westinghouse Electric Corp Preshaped two-phase glass ceramic body and process for preparing the same
FR1400657A (fr) * 1963-05-21 1965-05-28 Union Carbide Corp Boyaux pour aliments et procédés pour les produire
FR1489951A (fr) * 1965-07-30 1967-07-28 Nippon Electric Co Dispositifs semi-conducteurs comportant un revêtement diélectrique stable
US3505571A (en) * 1965-09-30 1970-04-07 Gen Electric Glass covered semiconductor device
US3560280A (en) * 1965-11-17 1971-02-02 Hitachi Ltd Method of selective removal of oxide coatings in the manufacture of semiconductor devices
US3535133A (en) * 1968-04-24 1970-10-20 Transitron Electronic Corp Alkali-free electronic glass and method of manufacture
US3632432A (en) * 1969-05-21 1972-01-04 Continental Device Corp Glass-coated semiconductor

Also Published As

Publication number Publication date
GB1377564A (en) 1974-12-18
FR2132717A1 (https=) 1972-11-24
FR2132717B1 (https=) 1977-12-23
BE781779A (fr) 1972-10-09
SE375882B (https=) 1975-04-28
IT951223B (it) 1973-06-30
DE2216658A1 (de) 1972-10-19
US3710205A (en) 1973-01-09

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