DE2211875A1 - Verfahren zur Herstellung von mit Öffnungen versehenen Filmen aus einem Material auf Basis von Siliciumoxyd auf einem Substrat - Google Patents

Verfahren zur Herstellung von mit Öffnungen versehenen Filmen aus einem Material auf Basis von Siliciumoxyd auf einem Substrat

Info

Publication number
DE2211875A1
DE2211875A1 DE19722211875 DE2211875A DE2211875A1 DE 2211875 A1 DE2211875 A1 DE 2211875A1 DE 19722211875 DE19722211875 DE 19722211875 DE 2211875 A DE2211875 A DE 2211875A DE 2211875 A1 DE2211875 A1 DE 2211875A1
Authority
DE
Germany
Prior art keywords
layer
substrate
silicon oxide
irradiation
phb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19722211875
Other languages
German (de)
English (en)
Other versions
DE2211875B2 (cg-RX-API-DMAC10.html
DE2211875C3 (cg-RX-API-DMAC10.html
Inventor
Barry Forester Burgess Hill Sussex; Roberts Edward David Purley Surrey; Martin (Großbritannien)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2211875A1 publication Critical patent/DE2211875A1/de
Publication of DE2211875B2 publication Critical patent/DE2211875B2/de
Application granted granted Critical
Publication of DE2211875C3 publication Critical patent/DE2211875C3/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
  • Weting (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
DE19722211875 1971-03-15 1972-03-11 Verfahren zur Herstellung von mit Öffnungen versehenen Filmen aus einem Material auf Basis von Siliciumoxyd auf einem Substrat Granted DE2211875A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB688471 1971-03-15

Publications (3)

Publication Number Publication Date
DE2211875A1 true DE2211875A1 (de) 1972-09-28
DE2211875B2 DE2211875B2 (cg-RX-API-DMAC10.html) 1979-01-11
DE2211875C3 DE2211875C3 (cg-RX-API-DMAC10.html) 1979-09-13

Family

ID=9822552

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19722211875 Granted DE2211875A1 (de) 1971-03-15 1972-03-11 Verfahren zur Herstellung von mit Öffnungen versehenen Filmen aus einem Material auf Basis von Siliciumoxyd auf einem Substrat

Country Status (6)

Country Link
US (1) US3825466A (cg-RX-API-DMAC10.html)
JP (1) JPS5328879B1 (cg-RX-API-DMAC10.html)
DE (1) DE2211875A1 (cg-RX-API-DMAC10.html)
FR (1) FR2130196B1 (cg-RX-API-DMAC10.html)
GB (1) GB1316711A (cg-RX-API-DMAC10.html)
IT (1) IT952963B (cg-RX-API-DMAC10.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4041190A (en) * 1971-06-29 1977-08-09 Thomson-Csf Method for producing a silica mask on a semiconductor substrate
DE2364850A1 (de) * 1972-12-29 1974-07-04 Atomic Energy Of Australia Verfahren zum fotoaetzen und fototiefdrucken unter verwendung von durch spaltbruchstuecken und/oder alphateilchen verursachte strahlen-aetzspuren von getonten fotographien
GB1451623A (en) * 1973-10-01 1976-10-06 Mullard Ltd Method of prov8ding a patterned layer of silicon-containing oxide on a substrate
JPS552041U (cg-RX-API-DMAC10.html) * 1978-06-20 1980-01-08
JPS5945946A (ja) * 1982-09-06 1984-03-15 Toyota Central Res & Dev Lab Inc 中空糸状多孔質ガラスの製造法
JPS6221151A (ja) * 1985-07-19 1987-01-29 Matsushita Electric Ind Co Ltd パタ−ン形成方法
GB2197881B (en) * 1986-10-03 1991-03-06 Denki Kagaku Kogyo Kk Heat resistant vessel and process for manufacturing same

Also Published As

Publication number Publication date
FR2130196B1 (cg-RX-API-DMAC10.html) 1977-09-02
US3825466A (en) 1974-07-23
DE2211875B2 (cg-RX-API-DMAC10.html) 1979-01-11
DE2211875C3 (cg-RX-API-DMAC10.html) 1979-09-13
JPS5328879B1 (cg-RX-API-DMAC10.html) 1978-08-17
FR2130196A1 (cg-RX-API-DMAC10.html) 1972-11-03
IT952963B (it) 1973-07-30
GB1316711A (en) 1973-05-16

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee