DE21780070T1 - Systeme und verfahren für mehrfarbige led mit gestapelten verbindungsstrukturen - Google Patents

Systeme und verfahren für mehrfarbige led mit gestapelten verbindungsstrukturen Download PDF

Info

Publication number
DE21780070T1
DE21780070T1 DE21780070.5T DE21780070T DE21780070T1 DE 21780070 T1 DE21780070 T1 DE 21780070T1 DE 21780070 T DE21780070 T DE 21780070T DE 21780070 T1 DE21780070 T1 DE 21780070T1
Authority
DE
Germany
Prior art keywords
layer
emitting layer
led
light
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE21780070.5T
Other languages
German (de)
English (en)
Inventor
Qiming Li
Qunchao XU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jade Bird Display Shanghai Ltd
Original Assignee
Jade Bird Display Shanghai Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jade Bird Display Shanghai Ltd filed Critical Jade Bird Display Shanghai Ltd
Publication of DE21780070T1 publication Critical patent/DE21780070T1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018Bonding of wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/032Manufacture or treatment of electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0364Manufacture or treatment of packages of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/813Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • H10H20/8314Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • H10H20/8316Multi-layer electrodes comprising at least one discontinuous layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/832Electrodes characterised by their material
    • H10H20/833Transparent materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Electroluminescent Light Sources (AREA)
DE21780070.5T 2020-03-30 2021-03-30 Systeme und verfahren für mehrfarbige led mit gestapelten verbindungsstrukturen Pending DE21780070T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202063002092P 2020-03-30 2020-03-30
US202063002092P 2020-03-30
EP21780070.5A EP4128206A4 (en) 2020-03-30 2021-03-30 Systems and methods for multi-color led with stacked bonding structures
PCT/US2021/024873 WO2021202521A1 (en) 2020-03-30 2021-03-30 Systems and methods for multi-color led with stacked bonding structures

Publications (1)

Publication Number Publication Date
DE21780070T1 true DE21780070T1 (de) 2023-05-25

Family

ID=77857109

Family Applications (1)

Application Number Title Priority Date Filing Date
DE21780070.5T Pending DE21780070T1 (de) 2020-03-30 2021-03-30 Systeme und verfahren für mehrfarbige led mit gestapelten verbindungsstrukturen

Country Status (9)

Country Link
US (4) US12255185B2 (https=)
EP (1) EP4128206A4 (https=)
JP (1) JP2023520120A (https=)
KR (1) KR20220162161A (https=)
CN (2) CN115335889B (https=)
AU (1) AU2021246026A1 (https=)
DE (1) DE21780070T1 (https=)
TW (1) TWI912299B (https=)
WO (1) WO2021202521A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11476299B2 (en) * 2020-08-31 2022-10-18 Hong Kong Beida Jade Bird Display Limited Double color micro LED display panel
WO2023181246A1 (ja) * 2022-03-24 2023-09-28 アルディーテック株式会社 半導体発光素子チップ集積装置およびその製造方法
US20230369304A1 (en) * 2022-05-11 2023-11-16 Seoul Viosys Co., Ltd. Pixel device and display apparatus having the same
CN115000118B (zh) * 2022-06-28 2024-12-31 安徽熙泰智能科技有限公司 有源寻址的micro LED元胞结构、其制备方法及micro LED器件
EP4542651A4 (en) * 2022-07-15 2025-11-26 Lg Electronics Inc Semiconductor Light Emitting Device Housing and Display Device
JP2025526685A (ja) * 2022-08-12 2025-08-15 ジェイド バード ディスプレイ(シャンハイ) リミテッド 多色led画素ユニットおよびマイクロledディスプレイパネル
CN116247143A (zh) * 2022-09-08 2023-06-09 华灿光电(浙江)有限公司 三基色发光二极管、发光模块及其制备方法
TWI854577B (zh) * 2023-04-06 2024-09-01 國立清華大學 紅外光發光元件
US20240395849A1 (en) * 2023-05-23 2024-11-28 Rayleigh Vision Limited Micro light-emitting diode panel structure
CN119604105B (zh) * 2023-09-07 2026-04-14 武汉华星光电半导体显示技术有限公司 显示面板
CN119630158B (zh) * 2023-09-12 2025-11-21 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN117012865B (zh) * 2023-09-27 2023-12-29 季华实验室 全彩Micro LED显示芯片及其制备方法
WO2025081418A1 (en) * 2023-10-19 2025-04-24 Jade Bird Display (shanghai) Limited A micro led display panel
CN119907388A (zh) * 2023-10-24 2025-04-29 京东方科技集团股份有限公司 发光芯片、显示装置和制造方法
CN119907389B (zh) * 2023-10-24 2025-11-25 武汉华星光电半导体显示技术有限公司 显示面板
WO2025097378A1 (en) * 2023-11-09 2025-05-15 Jade Bird Display (shanghai) Limited Micro led, micro led display panel and epitaxial structure
KR20250081955A (ko) * 2023-11-27 2025-06-09 삼성디스플레이 주식회사 표시 패널, 이를 포함하는 스마트 글라스, 및 이의 제조 방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4868709B2 (ja) * 2004-03-09 2012-02-01 三洋電機株式会社 発光素子
JP2008147608A (ja) * 2006-10-27 2008-06-26 Canon Inc Ledアレイの製造方法とledアレイ、及びledプリンタ
JP5330953B2 (ja) * 2009-10-01 2013-10-30 株式会社沖データ 発光装置
FR3019380B1 (fr) * 2014-04-01 2017-09-01 Centre Nat Rech Scient Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication
US9825088B2 (en) * 2015-07-24 2017-11-21 Epistar Corporation Light-emitting device and manufacturing method thereof
KR102651097B1 (ko) * 2016-10-28 2024-03-22 엘지디스플레이 주식회사 발광 다이오드 디스플레이 장치
KR102772357B1 (ko) * 2016-12-20 2025-02-21 엘지디스플레이 주식회사 발광 다이오드 칩 및 이를 포함하는 발광 다이오드 디스플레이 장치
KR20190117706A (ko) * 2017-02-24 2019-10-16 메사추세츠 인스티튜트 오브 테크놀로지 수직으로 적층된 다색 발광 다이오드(led) 디스플레이를 위한 방법들 및 장치들
US10418499B2 (en) * 2017-06-01 2019-09-17 Glo Ab Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof
CN107482032A (zh) * 2017-08-10 2017-12-15 佛山市国星半导体技术有限公司 一种用于全彩显示的MicroLED芯片及其制作方法
US12100696B2 (en) * 2017-11-27 2024-09-24 Seoul Viosys Co., Ltd. Light emitting diode for display and display apparatus having the same
US11282981B2 (en) * 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
US10804429B2 (en) * 2017-12-22 2020-10-13 Lumileds Llc III-nitride multi-wavelength LED for visible light communication
US11114499B2 (en) * 2018-01-02 2021-09-07 Seoul Viosys Co., Ltd. Display device having light emitting stacked structure
US10784240B2 (en) * 2018-01-03 2020-09-22 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US10325894B1 (en) 2018-04-17 2019-06-18 Shaoher Pan Integrated multi-color light-emitting pixel arrays based devices by bonding
TWI667786B (zh) * 2018-05-31 2019-08-01 友達光電股份有限公司 發光二極體顯示器及其製造方法
KR102579311B1 (ko) * 2018-07-13 2023-09-15 삼성전자주식회사 발광 소자, 발광 소자의 제조 방법 및 발광 소자를 포함하는 디스플레이 장치
US20200043901A1 (en) * 2018-08-02 2020-02-06 Intel Corporation Laser transfer printing for making micro led display devices and method
US10879419B2 (en) 2018-08-17 2020-12-29 Seoul Viosys Co., Ltd. Light emitting device
US12125941B2 (en) * 2019-12-09 2024-10-22 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same
US11404473B2 (en) * 2019-12-23 2022-08-02 Lumileds Llc III-nitride multi-wavelength LED arrays

Also Published As

Publication number Publication date
US12255185B2 (en) 2025-03-18
TW202145601A (zh) 2021-12-01
KR20220162161A (ko) 2022-12-07
US20250183236A1 (en) 2025-06-05
CN121078879A (zh) 2025-12-05
US20210305220A1 (en) 2021-09-30
CN115335889B (zh) 2025-08-29
US20260005204A1 (en) 2026-01-01
EP4128206A1 (en) 2023-02-08
WO2021202521A1 (en) 2021-10-07
TWI912299B (zh) 2026-01-21
JP2023520120A (ja) 2023-05-16
CN115335889A (zh) 2022-11-11
AU2021246026A1 (en) 2022-11-03
US20250192116A1 (en) 2025-06-12
EP4128206A4 (en) 2024-04-24

Similar Documents

Publication Publication Date Title
DE21780070T1 (de) Systeme und verfahren für mehrfarbige led mit gestapelten verbindungsstrukturen
DE24206108T1 (de) Systeme und verfahren für koaxiale mehrfarbige led
DE102017129926B4 (de) Leuchtdiodenanzeigevorrichtung
EP2130225B1 (de) Licht emittierendes modul
DE102014116438B4 (de) Organische Leuchtdiodenanzeigevorrichtung und Verfahren zu ihrer Herstellung
DE112013006060B4 (de) Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102017106755B4 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE112011103186T5 (de) Lichtemittierende Diodeneinheit auf Waferebene und Verfahren zu ihrer Herstellung
EP2619809A2 (de) Optoelektronisches halbleiterbauelement
US10381400B2 (en) Method of manufacturing light emitting device
US20190319065A1 (en) Method of manufacturing light emitting device
WO2020030714A1 (de) Optoelektronisches halbleiterbauteil und herstellungsverfahren für optoelektronische halbleiterbauteile
WO2019145350A1 (de) Optoelektronisches halbleiterbauteil und verfahren zur herstellung von optoelektronischen halbleiterbauteilen
DE102008030815A1 (de) Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen
DE102017100812A1 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE112020004635T5 (de) Verfahren zur Herstellung eines Halbleiterbauelements und das Halbleiterbauelement selbst
WO2010034277A1 (de) Led-modul und herstellungsverfahren
WO2018234119A1 (de) Anordnung mit einer mehrzahl von leuchtmodulen und verfahren zur herstellung einer anordnung mit einer mehrzahl von leuchtmodulen
TW202310391A (zh) 微型發光二極體顯示裝置
DE21744964T1 (de) Mikrolichtleuchtdiode mit hoher lichtauskopplung
WO2024227881A1 (de) Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement
DE102020125857A1 (de) System und Verfahren zur Herstellung einer Mikro-LED-Anzeige
WO2021089330A1 (de) Optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils
DE102019101544A1 (de) Optoelektronisches Bauelement und Verfahren
WO2009132614A1 (de) Strahlung emittierender dünnfilm-halbleiterchip und verfahren zur herstellung eines strahlung emittierenden dünnfilm-halbleiterchips