KR20220162161A - 적층 본딩 구조물들이 있는 다색 led를 위한 시스템들 및 방법들 - Google Patents

적층 본딩 구조물들이 있는 다색 led를 위한 시스템들 및 방법들 Download PDF

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KR20220162161A
KR20220162161A KR1020227037966A KR20227037966A KR20220162161A KR 20220162161 A KR20220162161 A KR 20220162161A KR 1020227037966 A KR1020227037966 A KR 1020227037966A KR 20227037966 A KR20227037966 A KR 20227037966A KR 20220162161 A KR20220162161 A KR 20220162161A
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layer
led
light emitting
emitting layer
type
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Korean (ko)
Inventor
치밍 리
췬차오 쉬
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제이드 버드 디스플레이(상하이) 리미티드
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    • H01L25/0753
    • H01L27/156
    • H01L33/0075
    • H01L33/0093
    • H01L33/08
    • H01L33/20
    • H01L33/385
    • H01L33/42
    • H01L33/44
    • H01L33/486
    • H01L33/62
    • HELECTRICITY
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    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018Bonding of wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/032Manufacture or treatment of electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0364Manufacture or treatment of packages of interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/813Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • H10H20/8314Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • H10H20/8316Multi-layer electrodes comprising at least one discontinuous layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/832Electrodes characterised by their material
    • H10H20/833Transparent materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations

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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020227037966A 2020-03-30 2021-03-30 적층 본딩 구조물들이 있는 다색 led를 위한 시스템들 및 방법들 Ceased KR20220162161A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063002092P 2020-03-30 2020-03-30
US63/002,092 2020-03-30
PCT/US2021/024873 WO2021202521A1 (en) 2020-03-30 2021-03-30 Systems and methods for multi-color led with stacked bonding structures

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Publication Number Publication Date
KR20220162161A true KR20220162161A (ko) 2022-12-07

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US (4) US12255185B2 (https=)
EP (1) EP4128206A4 (https=)
JP (1) JP2023520120A (https=)
KR (1) KR20220162161A (https=)
CN (2) CN115335889B (https=)
AU (1) AU2021246026A1 (https=)
DE (1) DE21780070T1 (https=)
TW (1) TWI912299B (https=)
WO (1) WO2021202521A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025116205A1 (ko) * 2023-11-27 2025-06-05 삼성디스플레이 주식회사 표시 패널, 이를 포함하는 스마트 글라스, 및 이의 제조 방법

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11476299B2 (en) * 2020-08-31 2022-10-18 Hong Kong Beida Jade Bird Display Limited Double color micro LED display panel
WO2023181246A1 (ja) * 2022-03-24 2023-09-28 アルディーテック株式会社 半導体発光素子チップ集積装置およびその製造方法
US20230369304A1 (en) * 2022-05-11 2023-11-16 Seoul Viosys Co., Ltd. Pixel device and display apparatus having the same
CN115000118B (zh) * 2022-06-28 2024-12-31 安徽熙泰智能科技有限公司 有源寻址的micro LED元胞结构、其制备方法及micro LED器件
EP4542651A4 (en) * 2022-07-15 2025-11-26 Lg Electronics Inc Semiconductor Light Emitting Device Housing and Display Device
JP2025526685A (ja) * 2022-08-12 2025-08-15 ジェイド バード ディスプレイ(シャンハイ) リミテッド 多色led画素ユニットおよびマイクロledディスプレイパネル
CN116247143A (zh) * 2022-09-08 2023-06-09 华灿光电(浙江)有限公司 三基色发光二极管、发光模块及其制备方法
TWI854577B (zh) * 2023-04-06 2024-09-01 國立清華大學 紅外光發光元件
US20240395849A1 (en) * 2023-05-23 2024-11-28 Rayleigh Vision Limited Micro light-emitting diode panel structure
CN119604105B (zh) * 2023-09-07 2026-04-14 武汉华星光电半导体显示技术有限公司 显示面板
CN119630158B (zh) * 2023-09-12 2025-11-21 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN117012865B (zh) * 2023-09-27 2023-12-29 季华实验室 全彩Micro LED显示芯片及其制备方法
WO2025081418A1 (en) * 2023-10-19 2025-04-24 Jade Bird Display (shanghai) Limited A micro led display panel
CN119907388A (zh) * 2023-10-24 2025-04-29 京东方科技集团股份有限公司 发光芯片、显示装置和制造方法
CN119907389B (zh) * 2023-10-24 2025-11-25 武汉华星光电半导体显示技术有限公司 显示面板
WO2025097378A1 (en) * 2023-11-09 2025-05-15 Jade Bird Display (shanghai) Limited Micro led, micro led display panel and epitaxial structure

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4868709B2 (ja) * 2004-03-09 2012-02-01 三洋電機株式会社 発光素子
JP2008147608A (ja) * 2006-10-27 2008-06-26 Canon Inc Ledアレイの製造方法とledアレイ、及びledプリンタ
JP5330953B2 (ja) * 2009-10-01 2013-10-30 株式会社沖データ 発光装置
FR3019380B1 (fr) * 2014-04-01 2017-09-01 Centre Nat Rech Scient Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication
US9825088B2 (en) * 2015-07-24 2017-11-21 Epistar Corporation Light-emitting device and manufacturing method thereof
KR102651097B1 (ko) * 2016-10-28 2024-03-22 엘지디스플레이 주식회사 발광 다이오드 디스플레이 장치
KR102772357B1 (ko) * 2016-12-20 2025-02-21 엘지디스플레이 주식회사 발광 다이오드 칩 및 이를 포함하는 발광 다이오드 디스플레이 장치
KR20190117706A (ko) * 2017-02-24 2019-10-16 메사추세츠 인스티튜트 오브 테크놀로지 수직으로 적층된 다색 발광 다이오드(led) 디스플레이를 위한 방법들 및 장치들
US10418499B2 (en) * 2017-06-01 2019-09-17 Glo Ab Self-aligned nanowire-based light emitting diode subpixels for a direct view display and method of making thereof
CN107482032A (zh) * 2017-08-10 2017-12-15 佛山市国星半导体技术有限公司 一种用于全彩显示的MicroLED芯片及其制作方法
US12100696B2 (en) * 2017-11-27 2024-09-24 Seoul Viosys Co., Ltd. Light emitting diode for display and display apparatus having the same
US11282981B2 (en) * 2017-11-27 2022-03-22 Seoul Viosys Co., Ltd. Passivation covered light emitting unit stack
US10804429B2 (en) * 2017-12-22 2020-10-13 Lumileds Llc III-nitride multi-wavelength LED for visible light communication
US11114499B2 (en) * 2018-01-02 2021-09-07 Seoul Viosys Co., Ltd. Display device having light emitting stacked structure
US10784240B2 (en) * 2018-01-03 2020-09-22 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US10325894B1 (en) 2018-04-17 2019-06-18 Shaoher Pan Integrated multi-color light-emitting pixel arrays based devices by bonding
TWI667786B (zh) * 2018-05-31 2019-08-01 友達光電股份有限公司 發光二極體顯示器及其製造方法
KR102579311B1 (ko) * 2018-07-13 2023-09-15 삼성전자주식회사 발광 소자, 발광 소자의 제조 방법 및 발광 소자를 포함하는 디스플레이 장치
US20200043901A1 (en) * 2018-08-02 2020-02-06 Intel Corporation Laser transfer printing for making micro led display devices and method
US10879419B2 (en) 2018-08-17 2020-12-29 Seoul Viosys Co., Ltd. Light emitting device
US12125941B2 (en) * 2019-12-09 2024-10-22 Seoul Viosys Co., Ltd. Light emitting device for display and display apparatus having the same
US11404473B2 (en) * 2019-12-23 2022-08-02 Lumileds Llc III-nitride multi-wavelength LED arrays

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025116205A1 (ko) * 2023-11-27 2025-06-05 삼성디스플레이 주식회사 표시 패널, 이를 포함하는 스마트 글라스, 및 이의 제조 방법

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Publication number Publication date
US12255185B2 (en) 2025-03-18
TW202145601A (zh) 2021-12-01
US20250183236A1 (en) 2025-06-05
CN121078879A (zh) 2025-12-05
US20210305220A1 (en) 2021-09-30
CN115335889B (zh) 2025-08-29
US20260005204A1 (en) 2026-01-01
EP4128206A1 (en) 2023-02-08
WO2021202521A1 (en) 2021-10-07
TWI912299B (zh) 2026-01-21
DE21780070T1 (de) 2023-05-25
JP2023520120A (ja) 2023-05-16
CN115335889A (zh) 2022-11-11
AU2021246026A1 (en) 2022-11-03
US20250192116A1 (en) 2025-06-12
EP4128206A4 (en) 2024-04-24

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