JP2023520120A - 接合構造が積層されたマルチカラーｌｅｄのシステム及び方法 - Google Patents

接合構造が積層されたマルチカラーｌｅｄのシステム及び方法 Download PDF

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JP2023520120A
JP2023520120A JP2022549111A JP2022549111A JP2023520120A JP 2023520120 A JP2023520120 A JP 2023520120A JP 2022549111 A JP2022549111 A JP 2022549111A JP 2022549111 A JP2022549111 A JP 2022549111A JP 2023520120 A JP2023520120 A JP 2023520120A
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emitting layer
light
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リ，キミン
スー，クンチャオ
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ジェイド バード ディスプレイ（シャンハイ） リミテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Adhesives Or Adhesive Processes (AREA)
  • Electroluminescent Light Sources (AREA)
JP2022549111A 2020-03-30 2021-03-30 接合構造が積層されたマルチカラーｌｅｄのシステム及び方法 Pending JP2023520120A (ja)

Applications Claiming Priority (3)

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US202063002092P 2020-03-30 2020-03-30
US63/002,092 2020-03-30
PCT/US2021/024873 WO2021202521A1 (en) 2020-03-30 2021-03-30 Systems and methods for multi-color led with stacked bonding structures

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JP2023520120A true JP2023520120A (ja) 2023-05-16
JP2023520120A5 JP2023520120A5 (https=) 2024-03-21

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US (4) US12255185B2 (https=)
EP (1) EP4128206A4 (https=)
JP (1) JP2023520120A (https=)
KR (1) KR20220162161A (https=)
CN (2) CN115335889B (https=)
AU (1) AU2021246026A1 (https=)
DE (1) DE21780070T1 (https=)
TW (1) TWI912299B (https=)
WO (1) WO2021202521A1 (https=)

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JPWO2023181246A1 (https=) * 2022-03-24 2023-09-28

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US11476299B2 (en) * 2020-08-31 2022-10-18 Hong Kong Beida Jade Bird Display Limited Double color micro LED display panel
US20230369304A1 (en) * 2022-05-11 2023-11-16 Seoul Viosys Co., Ltd. Pixel device and display apparatus having the same
CN115000118B (zh) * 2022-06-28 2024-12-31 安徽熙泰智能科技有限公司 有源寻址的micro LED元胞结构、其制备方法及micro LED器件
EP4542651A4 (en) * 2022-07-15 2025-11-26 Lg Electronics Inc Semiconductor Light Emitting Device Housing and Display Device
JP2025526685A (ja) * 2022-08-12 2025-08-15 ジェイド バード ディスプレイ（シャンハイ） リミテッド 多色ｌｅｄ画素ユニットおよびマイクロｌｅｄディスプレイパネル
CN116247143A (zh) * 2022-09-08 2023-06-09 华灿光电（浙江）有限公司 三基色发光二极管、发光模块及其制备方法
TWI854577B (zh) * 2023-04-06 2024-09-01 國立清華大學 紅外光發光元件
US20240395849A1 (en) * 2023-05-23 2024-11-28 Rayleigh Vision Limited Micro light-emitting diode panel structure
CN119604105B (zh) * 2023-09-07 2026-04-14 武汉华星光电半导体显示技术有限公司 显示面板
CN119630158B (zh) * 2023-09-12 2025-11-21 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN117012865B (zh) * 2023-09-27 2023-12-29 季华实验室 全彩Micro LED显示芯片及其制备方法
WO2025081418A1 (en) * 2023-10-19 2025-04-24 Jade Bird Display (shanghai) Limited A micro led display panel
CN119907388A (zh) * 2023-10-24 2025-04-29 京东方科技集团股份有限公司 发光芯片、显示装置和制造方法
CN119907389B (zh) * 2023-10-24 2025-11-25 武汉华星光电半导体显示技术有限公司 显示面板
WO2025097378A1 (en) * 2023-11-09 2025-05-15 Jade Bird Display (shanghai) Limited Micro led, micro led display panel and epitaxial structure
KR20250081955A (ko) * 2023-11-27 2025-06-09 삼성디스플레이 주식회사 표시 패널, 이를 포함하는 스마트 글라스, 및 이의 제조 방법

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JP2011077447A (ja) * 2009-10-01 2011-04-14 Oki Data Corp 発光装置
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JP2008147608A (ja) * 2006-10-27 2008-06-26 Canon Inc Ｌｅｄアレイの製造方法とｌｅｄアレイ、及びｌｅｄプリンタ
JP2011077447A (ja) * 2009-10-01 2011-04-14 Oki Data Corp 発光装置
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Publication number Priority date Publication date Assignee Title
JPWO2023181246A1 (https=) * 2022-03-24 2023-09-28
JP7465612B2 (ja) 2022-03-24 2024-04-11 アルディーテック株式会社 半導体発光素子チップ集積装置およびその製造方法

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US12255185B2 (en) 2025-03-18
TW202145601A (zh) 2021-12-01
KR20220162161A (ko) 2022-12-07
US20250183236A1 (en) 2025-06-05
CN121078879A (zh) 2025-12-05
US20210305220A1 (en) 2021-09-30
CN115335889B (zh) 2025-08-29
US20260005204A1 (en) 2026-01-01
EP4128206A1 (en) 2023-02-08
WO2021202521A1 (en) 2021-10-07
TWI912299B (zh) 2026-01-21
DE21780070T1 (de) 2023-05-25
CN115335889A (zh) 2022-11-11
AU2021246026A1 (en) 2022-11-03
US20250192116A1 (en) 2025-06-12
EP4128206A4 (en) 2024-04-24

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