DE2154026A1 - Verfahren zum Herstellen von Halb leiterbauelementen - Google Patents

Verfahren zum Herstellen von Halb leiterbauelementen

Info

Publication number
DE2154026A1
DE2154026A1 DE19712154026 DE2154026A DE2154026A1 DE 2154026 A1 DE2154026 A1 DE 2154026A1 DE 19712154026 DE19712154026 DE 19712154026 DE 2154026 A DE2154026 A DE 2154026A DE 2154026 A1 DE2154026 A1 DE 2154026A1
Authority
DE
Germany
Prior art keywords
gold
layer
semiconductor
temperature
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712154026
Other languages
German (de)
English (en)
Inventor
Shohei Takatsuki Osaka Fujiwara (Japan) P
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP45096128A external-priority patent/JPS4939223B1/ja
Priority claimed from JP45097672A external-priority patent/JPS4939224B1/ja
Priority claimed from JP45097673A external-priority patent/JPS4948264B1/ja
Priority claimed from JP45098605A external-priority patent/JPS4948265B1/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of DE2154026A1 publication Critical patent/DE2154026A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07332—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Die Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
DE19712154026 1970-10-30 1971-10-29 Verfahren zum Herstellen von Halb leiterbauelementen Pending DE2154026A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP45096128A JPS4939223B1 (enExample) 1970-10-30 1970-10-30
JP45097672A JPS4939224B1 (enExample) 1970-11-05 1970-11-05
JP45097673A JPS4948264B1 (enExample) 1970-11-05 1970-11-05
JP45098605A JPS4948265B1 (enExample) 1970-11-07 1970-11-07

Publications (1)

Publication Number Publication Date
DE2154026A1 true DE2154026A1 (de) 1972-05-18

Family

ID=27468399

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712154026 Pending DE2154026A1 (de) 1970-10-30 1971-10-29 Verfahren zum Herstellen von Halb leiterbauelementen

Country Status (6)

Country Link
US (1) US3729807A (enExample)
CA (1) CA920721A (enExample)
DE (1) DE2154026A1 (enExample)
FR (1) FR2111969B1 (enExample)
GB (1) GB1374626A (enExample)
NL (1) NL7114934A (enExample)

Families Citing this family (45)

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GB1389542A (en) * 1971-06-17 1975-04-03 Mullard Ltd Methods of securing a semiconductor body to a support
US3890455A (en) * 1972-06-23 1975-06-17 Ibm Method of electrolessly plating alloys
US3986251A (en) * 1974-10-03 1976-10-19 Motorola, Inc. Germanium doped light emitting diode bonding process
US4065588A (en) * 1975-11-20 1977-12-27 Rca Corporation Method of making gold-cobalt contact for silicon devices
JPS5439573A (en) * 1977-09-05 1979-03-27 Toshiba Corp Compound semiconductor device
US4293587A (en) * 1978-11-09 1981-10-06 Zilog, Inc. Low resistance backside preparation for semiconductor integrated circuit chips
EP0067993A1 (en) * 1980-12-30 1983-01-05 Mostek Corporation Die attachment exhibiting enhanced quality and reliability
US4702941A (en) * 1984-03-27 1987-10-27 Motorola Inc. Gold metallization process
US5037778A (en) * 1989-05-12 1991-08-06 Intel Corporation Die attach using gold ribbon with gold/silicon eutectic alloy cladding
US5028454A (en) * 1989-10-16 1991-07-02 Motorola Inc. Electroless plating of portions of semiconductor devices and the like
DE4107660C2 (de) * 1991-03-09 1995-05-04 Bosch Gmbh Robert Verfahren zur Montage von Silizium-Plättchen auf metallischen Montageflächen
JPH05200539A (ja) * 1992-01-24 1993-08-10 Honda Motor Co Ltd 半導体基板接合方法
US6225218B1 (en) * 1995-12-20 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
DE19639438A1 (de) * 1996-09-25 1998-04-02 Siemens Ag Halbleiterkörper mit Lotmaterialschicht
US6118351A (en) * 1997-06-10 2000-09-12 Lucent Technologies Inc. Micromagnetic device for power processing applications and method of manufacture therefor
US6440750B1 (en) 1997-06-10 2002-08-27 Agere Systems Guardian Corporation Method of making integrated circuit having a micromagnetic device
US6523560B1 (en) 1998-09-03 2003-02-25 General Electric Corporation Microvalve with pressure equalization
ATE393319T1 (de) 1998-09-03 2008-05-15 Ge Novasensor Inc Proportionale, mikromechanische vorrichtung
US7011378B2 (en) * 1998-09-03 2006-03-14 Ge Novasensor, Inc. Proportional micromechanical valve
US6255714B1 (en) 1999-06-22 2001-07-03 Agere Systems Guardian Corporation Integrated circuit having a micromagnetic device including a ferromagnetic core and method of manufacture therefor
US6845962B1 (en) * 2000-03-22 2005-01-25 Kelsey-Hayes Company Thermally actuated microvalve device
US6505811B1 (en) 2000-06-27 2003-01-14 Kelsey-Hayes Company High-pressure fluid control valve assembly having a microvalve device attached to fluid distributing substrate
US20070251586A1 (en) * 2003-11-24 2007-11-01 Fuller Edward N Electro-pneumatic control valve with microvalve pilot
KR20060109959A (ko) * 2003-11-24 2006-10-23 알루미나 마이크로 엘엘씨 가변형 변위 압축기 제어용 마이크로밸브 장치
WO2005084211A2 (en) * 2004-02-27 2005-09-15 Alumina Micro Llc Hybrid micro/macro plate valve
US8011388B2 (en) * 2003-11-24 2011-09-06 Microstaq, INC Thermally actuated microvalve with multiple fluid ports
WO2005091820A2 (en) * 2004-03-05 2005-10-06 Alumina Micro Llc Selective bonding for forming a microvalve
US7156365B2 (en) * 2004-07-27 2007-01-02 Kelsey-Hayes Company Method of controlling microvalve actuator
KR20070092328A (ko) * 2005-01-14 2007-09-12 알루미나 마이크로 엘엘씨 가변용량형 압축기를 제어하기 위한 시스템 및 방법
WO2008076388A1 (en) 2006-12-15 2008-06-26 Microstaq, Inc. Microvalve device
WO2008121369A1 (en) 2007-03-30 2008-10-09 Microstaq, Inc. Pilot operated micro spool valve
WO2008121365A1 (en) 2007-03-31 2008-10-09 Microstaq, Inc. Pilot operated spool valve
US8662468B2 (en) * 2008-08-09 2014-03-04 Dunan Microstaq, Inc. Microvalve device
US8113482B2 (en) * 2008-08-12 2012-02-14 DunAn Microstaq Microvalve device with improved fluid routing
CN102308131B (zh) 2008-12-06 2014-01-08 盾安美斯泰克有限公司 流体流动控制组件
WO2010117874A2 (en) 2009-04-05 2010-10-14 Microstaq, Inc. Method and structure for optimizing heat exchanger performance
WO2011022267A2 (en) 2009-08-17 2011-02-24 Microstaq, Inc. Micromachined device and control method
US9006844B2 (en) 2010-01-28 2015-04-14 Dunan Microstaq, Inc. Process and structure for high temperature selective fusion bonding
US8956884B2 (en) 2010-01-28 2015-02-17 Dunan Microstaq, Inc. Process for reconditioning semiconductor surface to facilitate bonding
US8996141B1 (en) 2010-08-26 2015-03-31 Dunan Microstaq, Inc. Adaptive predictive functional controller
US8925793B2 (en) 2012-01-05 2015-01-06 Dunan Microstaq, Inc. Method for making a solder joint
US9140613B2 (en) 2012-03-16 2015-09-22 Zhejiang Dunan Hetian Metal Co., Ltd. Superheat sensor
EP2693465A1 (en) * 2012-07-31 2014-02-05 Nxp B.V. Electronic device and method of manufacturing such device
US9188375B2 (en) 2013-12-04 2015-11-17 Zhejiang Dunan Hetian Metal Co., Ltd. Control element and check valve assembly
US9804273B2 (en) * 2014-10-17 2017-10-31 Purdue Research Foundation Combined n-type and p-type MOS-based radiation sensors for environmental compensations

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Publication number Priority date Publication date Assignee Title
US3078559A (en) * 1959-04-13 1963-02-26 Sylvania Electric Prod Method for preparing semiconductor elements
US3207838A (en) * 1961-06-30 1965-09-21 Western Electric Co Substrates having solderable gold films formed thereon, and methods of making the same
US3273979A (en) * 1964-07-06 1966-09-20 Rca Corp Semiconductive devices
US3585711A (en) * 1968-09-06 1971-06-22 Us Navy Gold-silicon bonding process
GB1256518A (enExample) * 1968-11-30 1971-12-08
US3618202A (en) * 1969-05-12 1971-11-09 Mallory & Co Inc P R Ceramic chip electrical components
US3673478A (en) * 1969-10-31 1972-06-27 Hitachi Ltd A semiconductor pellet fitted on a metal body
US3680199A (en) * 1970-07-06 1972-08-01 Texas Instruments Inc Alloying method

Also Published As

Publication number Publication date
FR2111969A1 (enExample) 1972-06-09
US3729807A (en) 1973-05-01
NL7114934A (enExample) 1972-05-03
GB1374626A (en) 1974-11-20
FR2111969B1 (enExample) 1974-06-21
CA920721A (en) 1973-02-06

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