DE2151073C3 - Verfahren zum Polieren von Saphiroder Magnesiumspinell-Einkristallen - Google Patents
Verfahren zum Polieren von Saphiroder Magnesiumspinell-EinkristallenInfo
- Publication number
- DE2151073C3 DE2151073C3 DE2151073A DE2151073A DE2151073C3 DE 2151073 C3 DE2151073 C3 DE 2151073C3 DE 2151073 A DE2151073 A DE 2151073A DE 2151073 A DE2151073 A DE 2151073A DE 2151073 C3 DE2151073 C3 DE 2151073C3
- Authority
- DE
- Germany
- Prior art keywords
- volume
- phosphoric acid
- sulfuric acid
- sapphire
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052594 sapphire Inorganic materials 0.000 title claims description 26
- 239000010980 sapphire Substances 0.000 title claims description 26
- 238000000034 method Methods 0.000 title claims description 19
- 229910052596 spinel Inorganic materials 0.000 title claims description 15
- 239000011029 spinel Substances 0.000 title claims description 15
- 239000013078 crystal Substances 0.000 title claims description 13
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 title claims description 9
- 229910052749 magnesium Inorganic materials 0.000 title claims description 9
- 239000011777 magnesium Substances 0.000 title claims description 9
- 238000005498 polishing Methods 0.000 title description 15
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 57
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 53
- 239000000203 mixture Substances 0.000 claims description 34
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 28
- 238000007517 polishing process Methods 0.000 claims description 3
- 235000011007 phosphoric acid Nutrition 0.000 description 21
- 239000000463 material Substances 0.000 description 16
- 238000005530 etching Methods 0.000 description 14
- 239000000126 substance Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005755 formation reaction Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000003801 milling Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- YXJYBPXSEKMEEJ-UHFFFAOYSA-N phosphoric acid;sulfuric acid Chemical compound OP(O)(O)=O.OS(O)(=O)=O YXJYBPXSEKMEEJ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- HIGRAKVNKLCVCA-UHFFFAOYSA-N alumine Chemical compound C1=CC=[Al]C=C1 HIGRAKVNKLCVCA-UHFFFAOYSA-N 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910001506 inorganic fluoride Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 235000014380 magnesium carbonate Nutrition 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/081,610 US3964942A (en) | 1970-10-16 | 1970-10-16 | Chemical polishing of single crystal dielectrics |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2151073A1 DE2151073A1 (de) | 1972-04-20 |
| DE2151073B2 DE2151073B2 (de) | 1979-08-16 |
| DE2151073C3 true DE2151073C3 (de) | 1980-04-24 |
Family
ID=22165231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2151073A Expired DE2151073C3 (de) | 1970-10-16 | 1971-10-13 | Verfahren zum Polieren von Saphiroder Magnesiumspinell-Einkristallen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3964942A (forum.php) |
| JP (1) | JPS5242031B1 (forum.php) |
| DE (1) | DE2151073C3 (forum.php) |
| FR (1) | FR2112301B1 (forum.php) |
| GB (1) | GB1288018A (forum.php) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5582659A (en) * | 1978-12-19 | 1980-06-21 | Seiko Epson Corp | Typewriter |
| US4381216A (en) * | 1981-08-03 | 1983-04-26 | General Electric Company | Method of etching to form cationically-conductive ceramic body |
| US4381968A (en) * | 1981-08-03 | 1983-05-03 | General Electric Company | Etched beta"-alumina ceramic electrolyte |
| US4374701A (en) * | 1981-08-03 | 1983-02-22 | General Electric Company | Chemically polished ceramic body |
| US4534827A (en) * | 1983-08-26 | 1985-08-13 | Henderson Donald W | Cutting implement and method of making same |
| DE3506691A1 (de) * | 1985-02-26 | 1986-09-04 | Feldmühle AG, 4000 Düsseldorf | Gleit- oder dichtelementpaarung |
| JPH02124800A (ja) * | 1988-07-04 | 1990-05-14 | Hiroaki Aoshima | 一体同化した合成コランダムの単結晶構造体の製造方法 |
| US5278430A (en) * | 1989-11-18 | 1994-01-11 | Kabushiki Kaisha Toshiba | Complementary semiconductor device using diamond thin film and the method of manufacturing this device |
| US6839362B2 (en) * | 2001-05-22 | 2005-01-04 | Saint-Gobain Ceramics & Plastics, Inc. | Cobalt-doped saturable absorber Q-switches and laser systems |
| US6902962B2 (en) * | 2003-04-04 | 2005-06-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicon-on-insulator chip with multiple crystal orientations |
| US20050061230A1 (en) * | 2003-09-23 | 2005-03-24 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
| US7326477B2 (en) * | 2003-09-23 | 2008-02-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel boules, wafers, and methods for fabricating same |
| US7045223B2 (en) * | 2003-09-23 | 2006-05-16 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel articles and methods for forming same |
| CN100433268C (zh) * | 2004-12-08 | 2008-11-12 | 深圳市方大国科光电技术有限公司 | 蓝宝石衬底磨削方法 |
| US7919815B1 (en) | 2005-02-24 | 2011-04-05 | Saint-Gobain Ceramics & Plastics, Inc. | Spinel wafers and methods of preparation |
| DE102008046854A1 (de) * | 2008-09-12 | 2010-03-18 | Osram Opto Semiconductors Gmbh | Verfahren zur Bearbeitung der Oberfläche von Substraten für Halbleiterbauelemente, hiermit hergestellte Substrate und Halbleiterbauelemente, die diese Substrate enthalten |
| CN102085631B (zh) * | 2010-11-22 | 2012-12-12 | 湖南大学 | 一种高硬涂层材料的间歇式磨削方法 |
| US10052848B2 (en) | 2012-03-06 | 2018-08-21 | Apple Inc. | Sapphire laminates |
| US9221289B2 (en) | 2012-07-27 | 2015-12-29 | Apple Inc. | Sapphire window |
| US9232672B2 (en) | 2013-01-10 | 2016-01-05 | Apple Inc. | Ceramic insert control mechanism |
| US9678540B2 (en) | 2013-09-23 | 2017-06-13 | Apple Inc. | Electronic component embedded in ceramic material |
| US9632537B2 (en) | 2013-09-23 | 2017-04-25 | Apple Inc. | Electronic component embedded in ceramic material |
| US9154678B2 (en) | 2013-12-11 | 2015-10-06 | Apple Inc. | Cover glass arrangement for an electronic device |
| US9225056B2 (en) | 2014-02-12 | 2015-12-29 | Apple Inc. | Antenna on sapphire structure |
| WO2016028764A1 (en) * | 2014-08-18 | 2016-02-25 | University Of Cincinnati | Magnesium single crystal for biomedical applications and methods of making same |
| US10406634B2 (en) | 2015-07-01 | 2019-09-10 | Apple Inc. | Enhancing strength in laser cutting of ceramic components |
| CN111829941A (zh) * | 2020-05-27 | 2020-10-27 | 盐城工学院 | 一种用于检测氧化镓单晶加工表面损伤层的腐蚀液及检测方法 |
| CN111424318B (zh) * | 2020-06-10 | 2020-10-16 | 眉山博雅新材料有限公司 | 一种用于制备掺杂yag单晶光纤的方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1482793A (en) * | 1921-07-16 | 1924-02-05 | Carborundum Co | Process for treating surfaces of crystalline mineral material |
| US2967136A (en) * | 1954-03-01 | 1961-01-03 | Reynolds Metals Co | Chemical brightening and electrolytic polishing of aluminum |
| US3042566A (en) * | 1958-09-22 | 1962-07-03 | Boeing Co | Chemical milling |
| US3106499A (en) * | 1959-05-11 | 1963-10-08 | Rohr Corp | Process and composition for cleaning and polishing aluminum and its alloys |
-
1970
- 1970-10-16 US US05/081,610 patent/US3964942A/en not_active Expired - Lifetime
-
1971
- 1971-08-18 GB GB3865871A patent/GB1288018A/en not_active Expired
- 1971-09-03 JP JP46067584A patent/JPS5242031B1/ja active Pending
- 1971-09-16 FR FR7133812A patent/FR2112301B1/fr not_active Expired
- 1971-10-13 DE DE2151073A patent/DE2151073C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2112301B1 (forum.php) | 1974-08-19 |
| GB1288018A (forum.php) | 1972-09-06 |
| FR2112301A1 (forum.php) | 1972-06-16 |
| JPS5242031B1 (forum.php) | 1977-10-21 |
| DE2151073A1 (de) | 1972-04-20 |
| US3964942A (en) | 1976-06-22 |
| DE2151073B2 (de) | 1979-08-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |