DE2137519A1 - - Google Patents
Info
- Publication number
- DE2137519A1 DE2137519A1 DE19712137519 DE2137519A DE2137519A1 DE 2137519 A1 DE2137519 A1 DE 2137519A1 DE 19712137519 DE19712137519 DE 19712137519 DE 2137519 A DE2137519 A DE 2137519A DE 2137519 A1 DE2137519 A1 DE 2137519A1
- Authority
- DE
- Germany
- Prior art keywords
- aluminum oxide
- temperature
- control electrode
- layer
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10P14/6334—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P14/6529—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H10P14/6339—
-
- H10P14/69391—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7224829A FR2147041B1 (enExample) | 1971-07-28 | 1972-06-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8462870A | 1970-10-28 | 1970-10-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2137519A1 true DE2137519A1 (enExample) | 1972-05-04 |
Family
ID=22186201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712137519 Pending DE2137519A1 (enExample) | 1970-10-28 | 1971-07-28 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3702786A (enExample) |
| BE (1) | BE769355A (enExample) |
| CA (1) | CA930479A (enExample) |
| DE (1) | DE2137519A1 (enExample) |
| FR (1) | FR2112348B1 (enExample) |
| GB (1) | GB1348024A (enExample) |
| NL (1) | NL7108196A (enExample) |
| SE (1) | SE374623B (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2134172B1 (enExample) * | 1971-04-23 | 1977-03-18 | Radiotechnique Compelec | |
| DE102008035235B4 (de) * | 2008-07-29 | 2014-05-22 | Ivoclar Vivadent Ag | Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen |
-
1970
- 1970-10-28 US US84628A patent/US3702786A/en not_active Expired - Lifetime
-
1971
- 1971-05-27 GB GB1745071A patent/GB1348024A/en not_active Expired
- 1971-06-03 CA CA114772A patent/CA930479A/en not_active Expired
- 1971-06-15 NL NL7108196A patent/NL7108196A/xx unknown
- 1971-06-25 FR FR7123300A patent/FR2112348B1/fr not_active Expired
- 1971-06-30 BE BE769355A patent/BE769355A/xx unknown
- 1971-07-27 SE SE7109621A patent/SE374623B/xx unknown
- 1971-07-28 DE DE19712137519 patent/DE2137519A1/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| SE374623B (enExample) | 1975-03-10 |
| FR2112348A1 (enExample) | 1972-06-16 |
| GB1348024A (en) | 1974-03-13 |
| BE769355A (fr) | 1971-11-03 |
| FR2112348B1 (enExample) | 1976-09-03 |
| CA930479A (en) | 1973-07-17 |
| US3702786A (en) | 1972-11-14 |
| NL7108196A (enExample) | 1972-05-03 |
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