DE2137519A1 - - Google Patents

Info

Publication number
DE2137519A1
DE2137519A1 DE19712137519 DE2137519A DE2137519A1 DE 2137519 A1 DE2137519 A1 DE 2137519A1 DE 19712137519 DE19712137519 DE 19712137519 DE 2137519 A DE2137519 A DE 2137519A DE 2137519 A1 DE2137519 A1 DE 2137519A1
Authority
DE
Germany
Prior art keywords
aluminum oxide
temperature
control electrode
layer
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712137519
Other languages
German (de)
English (en)
Inventor
Michael Thomas Priceton Junction NJ. Duffy (V.St.A.). HOIl 13-00
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2137519A1 publication Critical patent/DE2137519A1/de
Priority to FR7224829A priority Critical patent/FR2147041B1/fr
Pending legal-status Critical Current

Links

Classifications

    • H10P14/6334
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02296Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10P14/6529
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H10P14/6339
    • H10P14/69391

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
DE19712137519 1970-10-28 1971-07-28 Pending DE2137519A1 (enExample)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7224829A FR2147041B1 (enExample) 1971-07-28 1972-06-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8462870A 1970-10-28 1970-10-28

Publications (1)

Publication Number Publication Date
DE2137519A1 true DE2137519A1 (enExample) 1972-05-04

Family

ID=22186201

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712137519 Pending DE2137519A1 (enExample) 1970-10-28 1971-07-28

Country Status (8)

Country Link
US (1) US3702786A (enExample)
BE (1) BE769355A (enExample)
CA (1) CA930479A (enExample)
DE (1) DE2137519A1 (enExample)
FR (1) FR2112348B1 (enExample)
GB (1) GB1348024A (enExample)
NL (1) NL7108196A (enExample)
SE (1) SE374623B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2134172B1 (enExample) * 1971-04-23 1977-03-18 Radiotechnique Compelec
DE102008035235B4 (de) * 2008-07-29 2014-05-22 Ivoclar Vivadent Ag Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen

Also Published As

Publication number Publication date
SE374623B (enExample) 1975-03-10
FR2112348A1 (enExample) 1972-06-16
GB1348024A (en) 1974-03-13
BE769355A (fr) 1971-11-03
FR2112348B1 (enExample) 1976-09-03
CA930479A (en) 1973-07-17
US3702786A (en) 1972-11-14
NL7108196A (enExample) 1972-05-03

Similar Documents

Publication Publication Date Title
DE1589810C3 (de) Passiviertes Halbleiterbauelement und Verfahren zu seiner Herstellung
DE3541587C2 (de) Verfahren zur Herstellung eines dünnen Halbleiterfilms
DE2623009C2 (de) Verfahren zum Herstellen einer Halbleiteranordnung
DE2455730C3 (de) Feldeffekt-Transistor mit einem Substrat aus einkristallinem Saphir oder Spinell
DE1952626B2 (de) Verfahren zur herstellung von isolationsschichten auf halbleitersubstraten durch hochfrequenz-kathodenzerstaeubung
DE2314260A1 (de) Ladungsgekoppelte halbleiteranordnung und verfahren zu ihrer herstellung
EP0075874A2 (de) Verfahren zur Erzeugung elektrisch leitender Schichten
DE1464390B2 (de) Feldeffekttransistor
DE2655341A1 (de) Halbleiteranordnung mit passivierter oberflaeche und verfahren zur herstellung dieser anordnung
DE1956964A1 (de) Halbleiter und deren Herstellungsmethode
DE2655998A1 (de) Isolierschicht-feldeffekttransistor mit zusammengesetztem kanal und verfahren zu seiner herstellung
EP0066730B1 (de) Gateisolations-Schichtstruktur, Verfahren zu ihrer Herstellung und ihre Verwendung
DE2911484C2 (de) Metall-Isolator-Halbleiterbauelement
DE1640486C3 (de) Verfahren zum reaktiven Zerstäuben von elementarem Silicium
DE1803028A1 (de) Feldeffekttransistor und Verfahren zum Herstellen des Transistors
DE1514359B1 (de) Feldeffekt-Halbleiterbauelement und Verfahren zu seiner Herstellung
DE2636280A1 (de) Anordnung aus einem substrat und mindestens einer darauf aufgebrachten schicht und herstellungsverfahren hierfuer
DE2059116A1 (de) Verfahren zur Herstellung eines Halbleiterbauelementes
DE2111633A1 (de) Verfahren zur Herstellung eines Oberflaechen-Feldeffekt-Transistors
DE1901645A1 (de) Halbleiterbauelement mit Aluminiumueberzuegen
DE3032364C2 (de) Elektrisch programmierbarer Halbleiter-Festwertspeicher und Verfahren zu seiner Herstellung
DE1589890A1 (de) Halbleiterelement mit Isolierueberzuegen und Verfahren zu seiner Herstellung
DE2137519A1 (enExample)
DE2216658A1 (de) Halbleiterschaltelement mit Dielektrikum
DE4312527C2 (de) Verfahren zur Bildung einer Bor-dotierten halbleitenden Diamantschicht