FR2112348A1 - - Google Patents

Info

Publication number
FR2112348A1
FR2112348A1 FR7123300A FR7123300A FR2112348A1 FR 2112348 A1 FR2112348 A1 FR 2112348A1 FR 7123300 A FR7123300 A FR 7123300A FR 7123300 A FR7123300 A FR 7123300A FR 2112348 A1 FR2112348 A1 FR 2112348A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7123300A
Other languages
French (fr)
Other versions
FR2112348B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2112348A1 publication Critical patent/FR2112348A1/fr
Application granted granted Critical
Publication of FR2112348B1 publication Critical patent/FR2112348B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H10P14/6334—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/6529—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H10P14/6339—
    • H10P14/69391—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
FR7123300A 1970-10-28 1971-06-25 Expired FR2112348B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8462870A 1970-10-28 1970-10-28

Publications (2)

Publication Number Publication Date
FR2112348A1 true FR2112348A1 (enExample) 1972-06-16
FR2112348B1 FR2112348B1 (enExample) 1976-09-03

Family

ID=22186201

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7123300A Expired FR2112348B1 (enExample) 1970-10-28 1971-06-25

Country Status (8)

Country Link
US (1) US3702786A (enExample)
BE (1) BE769355A (enExample)
CA (1) CA930479A (enExample)
DE (1) DE2137519A1 (enExample)
FR (1) FR2112348B1 (enExample)
GB (1) GB1348024A (enExample)
NL (1) NL7108196A (enExample)
SE (1) SE374623B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2134172B1 (enExample) * 1971-04-23 1977-03-18 Radiotechnique Compelec
DE102008035235B4 (de) * 2008-07-29 2014-05-22 Ivoclar Vivadent Ag Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen

Non-Patent Citations (9)

* Cited by examiner, † Cited by third party
Title
"PROPERTIES OF ALUMINIUM OXIDE *
"PROPERTIES OF ALUMINIUM OXIDE OBTAINED BY HYDROLYSIS OF ALC13"T.TSUJIDE ET AL",PAGES 703 A 708.) *
(REVUE AMERICAINE"JOURNAL OF THE ELECTROCHEMICAL SOCIETY"VOL.117,NO 3,MARS 1970,"INTERFACE PROPERTIES OF SI- S102 -A1203 STRUCTURES"M.T.DUFFY ET AL.,PAGES 372 A 377. *
*REVUE AMERICAINE" JOURNAL OF THE ELECTROCHEMICAL SOCIETY",VOL.117,NO 5,MAI 1970 *
JOURNAL OF THE ELECTROCHEMICAL SOCIETY",VOL.117,NO 5,MAI 1970 *
OBTAINED BY HYDROLYSIS OF ALC13"T.TSUJIDE ET AL",PAGES 703 A 708.) *
PROPERTIES OF SI- S102 -A1203 STRUCTURES"M.T.DUFFY ET AL.,PAGES 372 A 377. *
REVUE AMERICAINE" *
REVUE AMERICAINE"JOURNAL OF THE ELECTROCHEMICAL SOCIETY"VOL.117,NO 3,MARS 1970,"INTERFACE *

Also Published As

Publication number Publication date
SE374623B (enExample) 1975-03-10
GB1348024A (en) 1974-03-13
BE769355A (fr) 1971-11-03
DE2137519A1 (enExample) 1972-05-04
FR2112348B1 (enExample) 1976-09-03
CA930479A (en) 1973-07-17
US3702786A (en) 1972-11-14
NL7108196A (enExample) 1972-05-03

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Legal Events

Date Code Title Description
ST Notification of lapse