GB1348024A - Semiconductor device with aluminum oxide dielectric - Google Patents

Semiconductor device with aluminum oxide dielectric

Info

Publication number
GB1348024A
GB1348024A GB1745071A GB1745071A GB1348024A GB 1348024 A GB1348024 A GB 1348024A GB 1745071 A GB1745071 A GB 1745071A GB 1745071 A GB1745071 A GB 1745071A GB 1348024 A GB1348024 A GB 1348024A
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
aluminum oxide
oxide dielectric
dielectric
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1745071A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1348024A publication Critical patent/GB1348024A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/6334—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/6529—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H10P14/6339—
    • H10P14/69391—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
GB1745071A 1970-10-28 1971-05-27 Semiconductor device with aluminum oxide dielectric Expired GB1348024A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8462870A 1970-10-28 1970-10-28

Publications (1)

Publication Number Publication Date
GB1348024A true GB1348024A (en) 1974-03-13

Family

ID=22186201

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1745071A Expired GB1348024A (en) 1970-10-28 1971-05-27 Semiconductor device with aluminum oxide dielectric

Country Status (8)

Country Link
US (1) US3702786A (enExample)
BE (1) BE769355A (enExample)
CA (1) CA930479A (enExample)
DE (1) DE2137519A1 (enExample)
FR (1) FR2112348B1 (enExample)
GB (1) GB1348024A (enExample)
NL (1) NL7108196A (enExample)
SE (1) SE374623B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2134172B1 (enExample) * 1971-04-23 1977-03-18 Radiotechnique Compelec
DE102008035235B4 (de) * 2008-07-29 2014-05-22 Ivoclar Vivadent Ag Vorrichtung zur Erwärmung von Formteilen, insbesondere dentalkeramischen Formteilen

Also Published As

Publication number Publication date
SE374623B (enExample) 1975-03-10
FR2112348A1 (enExample) 1972-06-16
BE769355A (fr) 1971-11-03
DE2137519A1 (enExample) 1972-05-04
FR2112348B1 (enExample) 1976-09-03
CA930479A (en) 1973-07-17
US3702786A (en) 1972-11-14
NL7108196A (enExample) 1972-05-03

Similar Documents

Publication Publication Date Title
YU20671A (en) Semiconductor device
GB1343174A (en) Semiconductor devices
MY7400218A (en) Semiconductor device fabrication
CA922424A (en) Semiconductor device
AU463404B2 (en) Semiconductor device
GB1349276A (en) Semiconductor device
GB1348024A (en) Semiconductor device with aluminum oxide dielectric
AU462016B2 (en) Semiconductor device with aluminum oxide dielectric
HK58776A (en) Semiconductor devices
AU3082871A (en) Semiconductor device with aluminum oxide dielectric
CA859934A (en) Semiconductor device
ZA715975B (en) Semiconductor device
HK58676A (en) Semiconductor devices
ZA708005B (en) Semiconductor device
AU450214B2 (en) Semiconductor device
CA853393A (en) Semiconductor device
AU440815B2 (en) Semiconductor device
CA859338A (en) Semiconductor device
AU451529B2 (en) Semiconductor device
AU461330B2 (en) Semiconductor device
CA858746A (en) Semiconductor device
CA855395A (en) Semiconductor device
CA854898A (en) Semiconductor device
CA831690A (en) Semiconductor device
CA832683A (en) Semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees