DE2125468A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE2125468A1
DE2125468A1 DE19712125468 DE2125468A DE2125468A1 DE 2125468 A1 DE2125468 A1 DE 2125468A1 DE 19712125468 DE19712125468 DE 19712125468 DE 2125468 A DE2125468 A DE 2125468A DE 2125468 A1 DE2125468 A1 DE 2125468A1
Authority
DE
Germany
Prior art keywords
semiconductor device
preform
contact
glass
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712125468
Other languages
German (de)
English (en)
Inventor
Bernard Robert Scipio Center N Y Tuft (V St A ) HOIl 11 00
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE2125468A1 publication Critical patent/DE2125468A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • H10W74/131—

Landscapes

  • Thyristors (AREA)
  • Die Bonding (AREA)
DE19712125468 1970-05-22 1971-05-22 Halbleitervorrichtung Pending DE2125468A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3993770A 1970-05-22 1970-05-22

Publications (1)

Publication Number Publication Date
DE2125468A1 true DE2125468A1 (de) 1971-12-09

Family

ID=21908173

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19712125468 Pending DE2125468A1 (de) 1970-05-22 1971-05-22 Halbleitervorrichtung
DE19717119982U Expired DE7119982U (de) 1970-05-22 1971-05-22 Halbleitervorrichtung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19717119982U Expired DE7119982U (de) 1970-05-22 1971-05-22 Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US3643136A (enExample)
DE (2) DE2125468A1 (enExample)
FR (1) FR2090208A1 (enExample)
GB (1) GB1356158A (enExample)
SE (1) SE374225B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1553243A (en) * 1975-08-04 1979-09-26 Gen Electric Semiconductor
US4161746A (en) * 1978-03-28 1979-07-17 Westinghouse Electric Corp. Glass sealed diode
US4329707A (en) * 1978-09-15 1982-05-11 Westinghouse Electric Corp. Glass-sealed power thyristor
JPS5936430B2 (ja) * 1980-01-17 1984-09-04 株式会社東芝 半導体装置
US4546376A (en) * 1983-09-30 1985-10-08 Citizen Watch Co., Ltd. Device for semiconductor integrated circuits
US4745455A (en) * 1986-05-16 1988-05-17 General Electric Company Silicon packages for power semiconductor devices
US5133795A (en) * 1986-11-04 1992-07-28 General Electric Company Method of making a silicon package for a power semiconductor device
US4987476A (en) * 1988-02-01 1991-01-22 General Instrument Corporation Brazed glass pre-passivated chip rectifier
US5034044A (en) * 1988-05-11 1991-07-23 General Electric Company Method of bonding a silicon package for a power semiconductor device
US7560739B2 (en) * 2004-06-29 2009-07-14 Intel Corporation Micro or below scale multi-layered heterostructure

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL280849A (enExample) * 1961-07-12 1900-01-01
NL286978A (enExample) * 1961-12-27
US3320495A (en) * 1963-07-02 1967-05-16 Atomic Energy Commission Surface-barrier diode for detecting high energy particles and method for preparing same
US3343048A (en) * 1964-02-20 1967-09-19 Westinghouse Electric Corp Four layer semiconductor switching devices having a shorted emitter and method of making the same
US3337781A (en) * 1965-06-14 1967-08-22 Westinghouse Electric Corp Encapsulation means for a semiconductor device
US3505571A (en) * 1965-09-30 1970-04-07 Gen Electric Glass covered semiconductor device

Also Published As

Publication number Publication date
US3643136A (en) 1972-02-15
GB1356158A (en) 1974-06-12
SE374225B (enExample) 1975-02-24
DE7119982U (de) 1971-09-30
FR2090208A1 (enExample) 1972-01-14

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