DE2113375A1 - Verfahren und Vorrichtung zur Beschichtung eines duennen Grundmaterials mit einem duennen Film - Google Patents
Verfahren und Vorrichtung zur Beschichtung eines duennen Grundmaterials mit einem duennen FilmInfo
- Publication number
- DE2113375A1 DE2113375A1 DE19712113375 DE2113375A DE2113375A1 DE 2113375 A1 DE2113375 A1 DE 2113375A1 DE 19712113375 DE19712113375 DE 19712113375 DE 2113375 A DE2113375 A DE 2113375A DE 2113375 A1 DE2113375 A1 DE 2113375A1
- Authority
- DE
- Germany
- Prior art keywords
- source
- substrate
- ions
- chamber
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims description 57
- 238000000034 method Methods 0.000 title claims description 18
- 239000010409 thin film Substances 0.000 title claims description 14
- 239000011248 coating agent Substances 0.000 title description 2
- 238000000576 coating method Methods 0.000 title description 2
- 150000002500 ions Chemical class 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 52
- 238000000151 deposition Methods 0.000 claims description 45
- 230000008021 deposition Effects 0.000 claims description 42
- 239000010408 film Substances 0.000 claims description 32
- 229910052799 carbon Inorganic materials 0.000 claims description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 9
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000001133 acceleration Effects 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 1
- 239000000344 soap Substances 0.000 claims 1
- 239000002585 base Substances 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 11
- 238000001771 vacuum deposition Methods 0.000 description 9
- -1 argon ions Chemical class 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000007737 ion beam deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 235000019738 Limestone Nutrition 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- OXRMMGBHYZHRMG-UHFFFAOYSA-N [Si].[Ar] Chemical compound [Si].[Ar] OXRMMGBHYZHRMG-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000006028 limestone Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical group [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2128270A | 1970-03-20 | 1970-03-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2113375A1 true DE2113375A1 (de) | 1971-10-07 |
Family
ID=21803338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712113375 Pending DE2113375A1 (de) | 1970-03-20 | 1971-03-19 | Verfahren und Vorrichtung zur Beschichtung eines duennen Grundmaterials mit einem duennen Film |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE2113375A1 (enExample) |
| ES (1) | ES389693A1 (enExample) |
| FR (1) | FR2084956A5 (enExample) |
| GB (1) | GB1341759A (enExample) |
| ZA (1) | ZA711702B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6040507B2 (ja) * | 1978-07-08 | 1985-09-11 | テルマク・アンラ−ゲンバウ・アクチエンゲゼルシャフト | 誘電性の被加工材料上に金属層或いは合金層を積層させる方法およびこの方法を実施するための装置 |
| JPS5957416A (ja) * | 1982-09-27 | 1984-04-03 | Konishiroku Photo Ind Co Ltd | 化合物半導体層の形成方法 |
| US4486286A (en) * | 1982-09-28 | 1984-12-04 | Nerken Research Corp. | Method of depositing a carbon film on a substrate and products obtained thereby |
| CH664163A5 (de) * | 1985-03-01 | 1988-02-15 | Balzers Hochvakuum | Verfahren zum reaktiven aufdampfen von schichten aus oxiden, nitriden, oxynitriden und karbiden. |
| EP0207768A3 (en) * | 1985-07-01 | 1987-08-05 | United Kingdom Atomic Energy Authority | Coating improvements |
| EP0208487A3 (en) * | 1985-07-01 | 1987-08-19 | United Kingdom Atomic Energy Authority | Coating improvements |
| US4888202A (en) * | 1986-07-31 | 1989-12-19 | Nippon Telegraph And Telephone Corporation | Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film |
| US4822466A (en) * | 1987-06-25 | 1989-04-18 | University Of Houston - University Park | Chemically bonded diamond films and method for producing same |
| US4816291A (en) * | 1987-08-19 | 1989-03-28 | The Regents Of The University Of California | Process for making diamond, doped diamond, diamond-cubic boron nitride composite films |
| GB2213501A (en) * | 1987-12-11 | 1989-08-16 | Plessey Co Plc | Production of superconducting thin films by ion beam sputtering from a single ceramic target |
| US7608151B2 (en) * | 2005-03-07 | 2009-10-27 | Sub-One Technology, Inc. | Method and system for coating sections of internal surfaces |
| CN115961263B (zh) * | 2022-12-30 | 2025-04-25 | 北京市科学技术研究院 | 一种中和离子束中高电荷的聚合物沉积装置 |
-
1971
- 1971-03-16 ZA ZA711702A patent/ZA711702B/xx unknown
- 1971-03-17 ES ES389693A patent/ES389693A1/es not_active Expired
- 1971-03-19 FR FR7109878A patent/FR2084956A5/fr not_active Expired
- 1971-03-19 DE DE19712113375 patent/DE2113375A1/de active Pending
- 1971-05-19 GB GB2334371A patent/GB1341759A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2084956A5 (enExample) | 1971-12-17 |
| ES389693A1 (es) | 1974-03-01 |
| GB1341759A (en) | 1973-12-25 |
| ZA711702B (en) | 1971-12-29 |
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