DE3875815T2 - Methode zur behandlung der substratoberflaechen mit hilfe von plasma und reaktor fuer die durchfuehrung dieser methode. - Google Patents

Methode zur behandlung der substratoberflaechen mit hilfe von plasma und reaktor fuer die durchfuehrung dieser methode.

Info

Publication number
DE3875815T2
DE3875815T2 DE8888201112T DE3875815T DE3875815T2 DE 3875815 T2 DE3875815 T2 DE 3875815T2 DE 8888201112 T DE8888201112 T DE 8888201112T DE 3875815 T DE3875815 T DE 3875815T DE 3875815 T2 DE3875815 T2 DE 3875815T2
Authority
DE
Germany
Prior art keywords
plasma
substrate surfaces
treating
reactor
implementing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888201112T
Other languages
English (en)
Other versions
DE3875815D1 (de
Inventor
Daniel Cornelis Schram
Gerardus Maria Wilhelm Kroesen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eindhoven Technical University
Original Assignee
Eindhoven Technical University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eindhoven Technical University filed Critical Eindhoven Technical University
Application granted granted Critical
Publication of DE3875815D1 publication Critical patent/DE3875815D1/de
Publication of DE3875815T2 publication Critical patent/DE3875815T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/26Plasma torches
    • H05H1/32Plasma torches using an arc
    • H05H1/42Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
DE8888201112T 1987-06-30 1988-06-02 Methode zur behandlung der substratoberflaechen mit hilfe von plasma und reaktor fuer die durchfuehrung dieser methode. Expired - Lifetime DE3875815T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8701530A NL8701530A (nl) 1987-06-30 1987-06-30 Werkwijze voor het behandelen van oppervlakken van substraten met behulp van een plasma en reactor voor het uitvoeren van die werkwijze.

Publications (2)

Publication Number Publication Date
DE3875815D1 DE3875815D1 (de) 1992-12-17
DE3875815T2 true DE3875815T2 (de) 1993-04-29

Family

ID=19850226

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888201112T Expired - Lifetime DE3875815T2 (de) 1987-06-30 1988-06-02 Methode zur behandlung der substratoberflaechen mit hilfe von plasma und reaktor fuer die durchfuehrung dieser methode.

Country Status (10)

Country Link
US (1) US4871580A (de)
EP (1) EP0297637B1 (de)
JP (1) JP2705029B2 (de)
AT (1) ATE82460T1 (de)
AU (1) AU596935B2 (de)
CA (1) CA1324979C (de)
DE (1) DE3875815T2 (de)
ES (1) ES2036253T3 (de)
GR (1) GR3007016T3 (de)
NL (1) NL8701530A (de)

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JP2706861B2 (ja) * 1991-07-23 1998-01-28 動力炉・核燃料開発事業団 クラスター生成装置
US5565247A (en) * 1991-08-30 1996-10-15 Canon Kabushiki Kaisha Process for forming a functional deposited film
US5525392A (en) * 1992-12-10 1996-06-11 International Business Machines Corporation Magnetic recording medium having a fluorinated polymeric protective layer formed by an ion beam
JPH0822945A (ja) * 1994-07-07 1996-01-23 Fujitsu Ltd 半導体装置の製造方法
SE9403988L (sv) * 1994-11-18 1996-04-01 Ladislav Bardos Apparat för alstring av linjär ljusbågsurladdning för plasmabearbetning
US5571332A (en) * 1995-02-10 1996-11-05 Jet Process Corporation Electron jet vapor deposition system
US6258287B1 (en) 1996-08-28 2001-07-10 Georgia Tech Research Corporation Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment
DE19648999C2 (de) * 1996-11-27 2000-08-03 Afs Entwicklungs & Vertriebs G Vorrichtung zur Reinigung, Beschichtung und/oder Aktivierung von Kunststoffoberflächen
US6213049B1 (en) 1997-06-26 2001-04-10 General Electric Company Nozzle-injector for arc plasma deposition apparatus
US6110544A (en) 1997-06-26 2000-08-29 General Electric Company Protective coating by high rate arc plasma deposition
KR100265289B1 (ko) * 1998-01-26 2000-09-15 윤종용 플라즈마식각장치의 캐소우드 제조방법 및 이에 따라 제조되는 캐소우드
US6122050A (en) * 1998-02-26 2000-09-19 Cornell Research Foundation, Inc. Optical interface for a radially viewed inductively coupled argon plasma-Optical emission spectrometer
US6261694B1 (en) 1999-03-17 2001-07-17 General Electric Company Infrared reflecting coatings
US6517687B1 (en) 1999-03-17 2003-02-11 General Electric Company Ultraviolet filters with enhanced weatherability and method of making
US6426125B1 (en) 1999-03-17 2002-07-30 General Electric Company Multilayer article and method of making by ARC plasma deposition
US6365016B1 (en) 1999-03-17 2002-04-02 General Electric Company Method and apparatus for arc plasma deposition with evaporation of reagents
US6420032B1 (en) 1999-03-17 2002-07-16 General Electric Company Adhesion layer for metal oxide UV filters
TW588222B (en) * 2000-02-10 2004-05-21 Asml Netherlands Bv Cooling of voice coil motors in lithographic projection apparatus
NL1017849C2 (nl) * 2001-04-16 2002-10-30 Univ Eindhoven Tech Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat.
WO2003017737A2 (en) * 2001-08-16 2003-02-27 Dow Global Technologies Inc. Cascade arc plasma and abrasion resistant coatings made therefrom
US6948448B2 (en) * 2001-11-27 2005-09-27 General Electric Company Apparatus and method for depositing large area coatings on planar surfaces
US6681716B2 (en) 2001-11-27 2004-01-27 General Electric Company Apparatus and method for depositing large area coatings on non-planar surfaces
WO2003066932A1 (en) * 2002-02-05 2003-08-14 Dow Global Technologies Inc. Corona-generated chemical vapor deposition on a substrate
RU2200058C1 (ru) * 2002-02-12 2003-03-10 Открытое акционерное общество "ТВЭЛ" Способ проведения гомогенных и гетерогенных химических реакций с использованием плазмы
US6743524B2 (en) * 2002-05-23 2004-06-01 General Electric Company Barrier layer for an article and method of making said barrier layer by expanding thermal plasma
NL1020923C2 (nl) * 2002-06-21 2003-12-23 Otb Group Bv Werkwijze alsmede inrichting voor het vervaardigen van een katalysator.
NL1021185C2 (nl) * 2002-07-30 2004-02-03 Fom Inst Voor Plasmafysica Inrichting voor het behandelen van een oppervlak van een substraat en een plasmabron.
US20040229051A1 (en) 2003-05-15 2004-11-18 General Electric Company Multilayer coating package on flexible substrates for electro-optical devices
CN1717582A (zh) * 2002-11-28 2006-01-04 皇家飞利浦电子股份有限公司 光学检验系统以及其中使用的辐射光源
NL1022155C2 (nl) * 2002-12-12 2004-06-22 Otb Group Bv Werkwijze, alsmede inrichting voor het behandelen van een oppervlak van ten minste één substraat.
US6969953B2 (en) * 2003-06-30 2005-11-29 General Electric Company System and method for inductive coupling of an expanding thermal plasma
US7282244B2 (en) * 2003-09-05 2007-10-16 General Electric Company Replaceable plate expanded thermal plasma apparatus and method
NL1025096C2 (nl) * 2003-12-21 2005-06-23 Otb Group Bv Werkwijze alsmede inrichting voor het vervaardigen van een functionele laag bestaande uit ten minste twee componenten.
US20050139253A1 (en) * 2003-12-31 2005-06-30 Korman Charles S. Solar cell assembly for use in an outer space environment or a non-earth environment
US20050139255A1 (en) * 2003-12-31 2005-06-30 Korman Charles S. Solar cell assembly for use in an outer space environment or a non-earth environment
US20050139256A1 (en) * 2003-12-31 2005-06-30 Korman Charles S. Solar cell assembly for use in an outer space environment or a non-earth environment
CN1965104A (zh) * 2004-03-09 2007-05-16 埃克阿泰克有限责任公司 膨胀式热等离子沉积系统
US7354845B2 (en) 2004-08-24 2008-04-08 Otb Group B.V. In-line process for making thin film electronic devices
US7703413B2 (en) * 2004-06-28 2010-04-27 Sabic Innovative Plastics Ip B.V. Expanded thermal plasma apparatus
WO2006126133A2 (en) * 2005-05-26 2006-11-30 Koninklijke Philips Electronics N.V. Cascade arc radiation source with oxygen scavenging means
WO2008007944A1 (en) * 2006-07-12 2008-01-17 Technische Universiteit Eindhoven Method and device for treating a substrate by means of a plasma
EP1895818B1 (de) * 2006-08-30 2015-03-11 Sulzer Metco AG Plasmazerstäubungsvorrichtung und Verfahren zur Einführung eines Flüssigkeitsvorläufers in ein Plasmagassystem
ES2534215T3 (es) 2006-08-30 2015-04-20 Oerlikon Metco Ag, Wohlen Dispositivo de pulverización de plasma y un método para la introducción de un precursor líquido en un sistema de gas de plasma
DE102006042501B4 (de) * 2006-09-07 2010-11-25 Eisenmann Anlagenbau Gmbh & Co. Kg Verfahren und Anlage zum Trocknen von Gegenständen
CA2658210A1 (en) 2008-04-04 2009-10-04 Sulzer Metco Ag Method and apparatus for the coating and for the surface treatment of substrates by means of a plasma beam
NL2003514C2 (en) 2009-09-18 2011-03-21 Otb Solar Bv Thin film deposition apparatus and method for the same.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2245779B1 (de) * 1973-09-28 1978-02-10 Cit Alcatel

Also Published As

Publication number Publication date
JP2705029B2 (ja) 1998-01-26
AU596935B2 (en) 1990-05-17
ATE82460T1 (de) 1992-11-15
EP0297637B1 (de) 1992-11-11
NL8701530A (nl) 1989-01-16
AU1822288A (en) 1989-01-05
JPH01208450A (ja) 1989-08-22
ES2036253T3 (es) 1993-05-16
DE3875815D1 (de) 1992-12-17
CA1324979C (en) 1993-12-07
EP0297637A1 (de) 1989-01-04
US4871580A (en) 1989-10-03
GR3007016T3 (de) 1993-07-30

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