DE2109803C3 - Integrierter Elementarstromkreis mit Feldeffekt-Transistoren - Google Patents

Integrierter Elementarstromkreis mit Feldeffekt-Transistoren

Info

Publication number
DE2109803C3
DE2109803C3 DE2109803A DE2109803A DE2109803C3 DE 2109803 C3 DE2109803 C3 DE 2109803C3 DE 2109803 A DE2109803 A DE 2109803A DE 2109803 A DE2109803 A DE 2109803A DE 2109803 C3 DE2109803 C3 DE 2109803C3
Authority
DE
Germany
Prior art keywords
terminal
transistors
transistor
main
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2109803A
Other languages
German (de)
English (en)
Other versions
DE2109803A1 (de
DE2109803B2 (de
Inventor
Giampiero Dr. Milano Rodari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull HN Information Systems Italia SpA
Original Assignee
Honeywell Information Systems Italia SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Information Systems Italia SpA filed Critical Honeywell Information Systems Italia SpA
Publication of DE2109803A1 publication Critical patent/DE2109803A1/de
Publication of DE2109803B2 publication Critical patent/DE2109803B2/de
Application granted granted Critical
Publication of DE2109803C3 publication Critical patent/DE2109803C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018557—Coupling arrangements; Impedance matching circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/1733—Controllable logic circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE2109803A 1970-03-12 1971-02-23 Integrierter Elementarstromkreis mit Feldeffekt-Transistoren Expired DE2109803C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2181370 1970-03-12

Publications (3)

Publication Number Publication Date
DE2109803A1 DE2109803A1 (de) 1971-09-23
DE2109803B2 DE2109803B2 (de) 1979-10-04
DE2109803C3 true DE2109803C3 (de) 1981-09-10

Family

ID=11187199

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2109803A Expired DE2109803C3 (de) 1970-03-12 1971-02-23 Integrierter Elementarstromkreis mit Feldeffekt-Transistoren

Country Status (3)

Country Link
DE (1) DE2109803C3 (enrdf_load_stackoverflow)
FR (1) FR2081890B1 (enrdf_load_stackoverflow)
GB (1) GB1337842A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3808475A (en) * 1972-07-10 1974-04-30 Amdahl Corp Lsi chip construction and method
NL7612223A (nl) * 1976-11-04 1978-05-08 Philips Nv Geintegreerde schakeling.

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3100838A (en) * 1960-06-22 1963-08-13 Rca Corp Binary full adder utilizing integrated unipolar transistors
US3201574A (en) * 1960-10-07 1965-08-17 Rca Corp Flexible logic circuit

Also Published As

Publication number Publication date
FR2081890B1 (enrdf_load_stackoverflow) 1973-06-08
FR2081890A1 (enrdf_load_stackoverflow) 1971-12-10
DE2109803A1 (de) 1971-09-23
GB1337842A (en) 1973-11-21
DE2109803B2 (de) 1979-10-04

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Legal Events

Date Code Title Description
OD Request for examination
OF Willingness to grant licences before publication of examined application
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee