DE2028632C3 - Zenerdiode - Google Patents
ZenerdiodeInfo
- Publication number
- DE2028632C3 DE2028632C3 DE19702028632 DE2028632A DE2028632C3 DE 2028632 C3 DE2028632 C3 DE 2028632C3 DE 19702028632 DE19702028632 DE 19702028632 DE 2028632 A DE2028632 A DE 2028632A DE 2028632 C3 DE2028632 C3 DE 2028632C3
- Authority
- DE
- Germany
- Prior art keywords
- zone
- zener diode
- junction
- dopant concentration
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000010354 integration Effects 0.000 claims 1
- 239000002019 doping agent Substances 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000007704 transition Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000012421 spiking Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83188369A | 1969-06-10 | 1969-06-10 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2028632A1 DE2028632A1 (de) | 1970-12-17 |
| DE2028632B2 DE2028632B2 (de) | 1981-04-16 |
| DE2028632C3 true DE2028632C3 (de) | 1982-01-21 |
Family
ID=25260092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702028632 Expired DE2028632C3 (de) | 1969-06-10 | 1970-06-10 | Zenerdiode |
Country Status (9)
| Country | Link |
|---|---|
| BE (1) | BE751635A (fr) |
| DE (1) | DE2028632C3 (fr) |
| ES (2) | ES380358A1 (fr) |
| FR (1) | FR2045944B1 (fr) |
| GB (1) | GB1271896A (fr) |
| MY (1) | MY7300409A (fr) |
| NL (1) | NL170068C (fr) |
| SE (1) | SE361555B (fr) |
| YU (1) | YU36240B (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5967670A (ja) * | 1982-10-12 | 1984-04-17 | Toshiba Corp | 半導体装置 |
| JPS5988871A (ja) * | 1982-11-12 | 1984-05-22 | バ−・ブラウン・コ−ポレ−ション | 高安定低電圧集積回路表面下降状ダイオ−ド構造体及びその製造方法 |
| IT1221019B (it) * | 1985-04-01 | 1990-06-21 | Ates Componenti Elettron | Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3305913A (en) * | 1964-09-11 | 1967-02-28 | Northern Electric Co | Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating |
| FR1529360A (fr) * | 1966-10-05 | 1968-06-14 | Rca Corp | Dispositifs semi-conducteurs |
| FR1559607A (fr) * | 1967-06-30 | 1969-03-14 | ||
| FR1557080A (fr) * | 1967-12-14 | 1969-02-14 |
-
1970
- 1970-02-25 SE SE242770A patent/SE361555B/xx unknown
- 1970-04-14 FR FR7013456A patent/FR2045944B1/fr not_active Expired
- 1970-06-02 GB GB2648870A patent/GB1271896A/en not_active Expired
- 1970-06-03 ES ES380358A patent/ES380358A1/es not_active Expired
- 1970-06-08 BE BE751635D patent/BE751635A/fr unknown
- 1970-06-09 YU YU147470A patent/YU36240B/xx unknown
- 1970-06-09 NL NL7008349A patent/NL170068C/xx not_active IP Right Cessation
- 1970-06-10 DE DE19702028632 patent/DE2028632C3/de not_active Expired
-
1972
- 1972-12-28 ES ES410121A patent/ES410121A1/es not_active Expired
-
1973
- 1973-12-30 MY MY7300409A patent/MY7300409A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2045944A1 (fr) | 1971-03-05 |
| DE2028632B2 (de) | 1981-04-16 |
| NL170068C (nl) | 1982-09-16 |
| BE751635A (fr) | 1970-11-16 |
| FR2045944B1 (fr) | 1974-02-01 |
| YU147470A (en) | 1981-04-30 |
| YU36240B (en) | 1982-02-25 |
| NL170068B (nl) | 1982-04-16 |
| GB1271896A (en) | 1972-04-26 |
| ES380358A1 (es) | 1973-04-16 |
| ES410121A1 (es) | 1976-01-01 |
| NL7008349A (fr) | 1970-12-14 |
| SE361555B (fr) | 1973-11-05 |
| MY7300409A (en) | 1973-12-31 |
| DE2028632A1 (de) | 1970-12-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) |