FR1557080A - - Google Patents
Info
- Publication number
- FR1557080A FR1557080A FR132205A FR1557080DA FR1557080A FR 1557080 A FR1557080 A FR 1557080A FR 132205 A FR132205 A FR 132205A FR 1557080D A FR1557080D A FR 1557080DA FR 1557080 A FR1557080 A FR 1557080A
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/983—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR132205 | 1967-12-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| FR1557080A true FR1557080A (fr) | 1969-02-14 |
Family
ID=8643206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR132205A Expired FR1557080A (fr) | 1967-12-14 | 1967-12-14 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3635773A (fr) |
| DE (1) | DE1813130C3 (fr) |
| FR (1) | FR1557080A (fr) |
| GB (1) | GB1244508A (fr) |
| NL (1) | NL6817588A (fr) |
| SE (1) | SE339726B (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2045944A1 (fr) * | 1969-06-10 | 1971-03-05 | Rca Corp |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7017066A (fr) * | 1970-11-21 | 1972-05-24 | ||
| JPS4843590A (fr) * | 1971-10-04 | 1973-06-23 | ||
| US3839104A (en) * | 1972-08-31 | 1974-10-01 | Texas Instruments Inc | Fabrication technique for high performance semiconductor devices |
| US4138280A (en) * | 1978-02-02 | 1979-02-06 | International Rectifier Corporation | Method of manufacture of zener diodes |
| US4578128A (en) * | 1984-12-03 | 1986-03-25 | Ncr Corporation | Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants |
| KR19980702335A (ko) * | 1995-12-21 | 1998-07-15 | 요트. 게. 아. 롤페즈 | 리서프 반도체장치를 제조하는 방법과 이러한 방법에 의해서 제조된 반도체 장치 |
| US7279773B2 (en) * | 2005-03-15 | 2007-10-09 | Delphi Technologies, Inc. | Protection device for handling energy transients |
| FR2953062B1 (fr) * | 2009-11-24 | 2011-12-16 | St Microelectronics Tours Sas | Diode de protection bidirectionnelle basse tension |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL256734A (fr) * | 1959-10-28 | |||
| US3183128A (en) * | 1962-06-11 | 1965-05-11 | Fairchild Camera Instr Co | Method of making field-effect transistors |
| US3255056A (en) * | 1963-05-20 | 1966-06-07 | Rca Corp | Method of forming semiconductor junction |
| US3391035A (en) * | 1965-08-20 | 1968-07-02 | Westinghouse Electric Corp | Method of making p-nu-junction devices by diffusion |
| US3404450A (en) * | 1966-01-26 | 1968-10-08 | Westinghouse Electric Corp | Method of fabricating an integrated circuit structure including unipolar transistor and bipolar transistor portions |
| US3490964A (en) * | 1966-04-29 | 1970-01-20 | Texas Instruments Inc | Process of forming semiconductor devices by masking and diffusion |
-
1967
- 1967-12-14 FR FR132205A patent/FR1557080A/fr not_active Expired
-
1968
- 1968-12-06 DE DE1813130A patent/DE1813130C3/de not_active Expired
- 1968-12-06 NL NL6817588A patent/NL6817588A/xx unknown
- 1968-12-11 SE SE16932/68A patent/SE339726B/xx unknown
- 1968-12-11 GB GB58827/68A patent/GB1244508A/en not_active Expired
- 1968-12-13 US US783620A patent/US3635773A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2045944A1 (fr) * | 1969-06-10 | 1971-03-05 | Rca Corp |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1813130C3 (de) | 1980-10-23 |
| US3635773A (en) | 1972-01-18 |
| DE1813130B2 (de) | 1980-02-28 |
| DE1813130A1 (de) | 1969-08-14 |
| SE339726B (fr) | 1971-10-18 |
| GB1244508A (en) | 1971-09-02 |
| NL6817588A (fr) | 1969-06-17 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |