DE2028632C3 - Zenerdiode - Google Patents
ZenerdiodeInfo
- Publication number
- DE2028632C3 DE2028632C3 DE2028632A DE2028632A DE2028632C3 DE 2028632 C3 DE2028632 C3 DE 2028632C3 DE 2028632 A DE2028632 A DE 2028632A DE 2028632 A DE2028632 A DE 2028632A DE 2028632 C3 DE2028632 C3 DE 2028632C3
- Authority
- DE
- Germany
- Prior art keywords
- zone
- zener diode
- junction
- dopant concentration
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000010354 integration Effects 0.000 claims 1
- 239000002019 doping agent Substances 0.000 description 18
- 238000009792 diffusion process Methods 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000007704 transition Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000012421 spiking Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83188369A | 1969-06-10 | 1969-06-10 |
Publications (3)
Publication Number | Publication Date |
---|---|
DE2028632A1 DE2028632A1 (de) | 1970-12-17 |
DE2028632B2 DE2028632B2 (de) | 1981-04-16 |
DE2028632C3 true DE2028632C3 (de) | 1982-01-21 |
Family
ID=25260092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2028632A Expired DE2028632C3 (de) | 1969-06-10 | 1970-06-10 | Zenerdiode |
Country Status (9)
Country | Link |
---|---|
BE (1) | BE751635A (enrdf_load_stackoverflow) |
DE (1) | DE2028632C3 (enrdf_load_stackoverflow) |
ES (2) | ES380358A1 (enrdf_load_stackoverflow) |
FR (1) | FR2045944B1 (enrdf_load_stackoverflow) |
GB (1) | GB1271896A (enrdf_load_stackoverflow) |
MY (1) | MY7300409A (enrdf_load_stackoverflow) |
NL (1) | NL170068C (enrdf_load_stackoverflow) |
SE (1) | SE361555B (enrdf_load_stackoverflow) |
YU (1) | YU36240B (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5967670A (ja) * | 1982-10-12 | 1984-04-17 | Toshiba Corp | 半導体装置 |
JPS5988871A (ja) * | 1982-11-12 | 1984-05-22 | バ−・ブラウン・コ−ポレ−ション | 高安定低電圧集積回路表面下降状ダイオ−ド構造体及びその製造方法 |
IT1221019B (it) * | 1985-04-01 | 1990-06-21 | Ates Componenti Elettron | Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3305913A (en) * | 1964-09-11 | 1967-02-28 | Northern Electric Co | Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating |
FR1529360A (fr) * | 1966-10-05 | 1968-06-14 | Rca Corp | Dispositifs semi-conducteurs |
FR1559607A (enrdf_load_stackoverflow) * | 1967-06-30 | 1969-03-14 | ||
FR1557080A (enrdf_load_stackoverflow) * | 1967-12-14 | 1969-02-14 |
-
1970
- 1970-02-25 SE SE02427/70A patent/SE361555B/xx unknown
- 1970-04-14 FR FR7013456A patent/FR2045944B1/fr not_active Expired
- 1970-06-02 GB GB26488/70A patent/GB1271896A/en not_active Expired
- 1970-06-03 ES ES380358A patent/ES380358A1/es not_active Expired
- 1970-06-08 BE BE751635D patent/BE751635A/xx unknown
- 1970-06-09 NL NLAANVRAGE7008349,A patent/NL170068C/xx not_active IP Right Cessation
- 1970-06-09 YU YU1474/70A patent/YU36240B/xx unknown
- 1970-06-10 DE DE2028632A patent/DE2028632C3/de not_active Expired
-
1972
- 1972-12-28 ES ES410121A patent/ES410121A1/es not_active Expired
-
1973
- 1973-12-30 MY MY409/73A patent/MY7300409A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
YU36240B (en) | 1982-02-25 |
NL7008349A (enrdf_load_stackoverflow) | 1970-12-14 |
ES380358A1 (es) | 1973-04-16 |
NL170068C (nl) | 1982-09-16 |
YU147470A (en) | 1981-04-30 |
SE361555B (enrdf_load_stackoverflow) | 1973-11-05 |
DE2028632A1 (de) | 1970-12-17 |
GB1271896A (en) | 1972-04-26 |
NL170068B (nl) | 1982-04-16 |
DE2028632B2 (de) | 1981-04-16 |
MY7300409A (en) | 1973-12-31 |
ES410121A1 (es) | 1976-01-01 |
FR2045944B1 (enrdf_load_stackoverflow) | 1974-02-01 |
BE751635A (fr) | 1970-11-16 |
FR2045944A1 (enrdf_load_stackoverflow) | 1971-03-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C3 | Grant after two publication steps (3rd publication) |