DE202011107497U1 - Struktur einer Schottky-Diode - Google Patents
Struktur einer Schottky-Diode Download PDFInfo
- Publication number
- DE202011107497U1 DE202011107497U1 DE202011107497U DE202011107497U DE202011107497U1 DE 202011107497 U1 DE202011107497 U1 DE 202011107497U1 DE 202011107497 U DE202011107497 U DE 202011107497U DE 202011107497 U DE202011107497 U DE 202011107497U DE 202011107497 U1 DE202011107497 U1 DE 202011107497U1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- schottky diode
- high concentration
- concentration doped
- trenches
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 239000004020 conductor Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 12
- 230000002093 peripheral effect Effects 0.000 claims abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 4
- 230000003685 thermal hair damage Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099224484U TWM403749U (en) | 2010-12-17 | 2010-12-17 | Schottky diode structure |
| CN099224484 | 2010-12-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE202011107497U1 true DE202011107497U1 (de) | 2012-02-27 |
Family
ID=45077618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE202011107497U Expired - Lifetime DE202011107497U1 (de) | 2010-12-17 | 2011-11-03 | Struktur einer Schottky-Diode |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR200470297Y1 (ko) |
| CN (1) | CN202307900U (ko) |
| DE (1) | DE202011107497U1 (ko) |
| TW (1) | TWM403749U (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2650920A1 (en) * | 2012-04-13 | 2013-10-16 | Taiwan Semiconductor Co., Ltd. | Trenched semiconductor structure |
| EP2650921A1 (en) * | 2012-04-13 | 2013-10-16 | Taiwan Semiconductor Co., Ltd. | Semiconductor structure comprising active region trenches arranged in a dispersed manner |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8575685B2 (en) * | 2011-08-25 | 2013-11-05 | Alpha And Omega Semiconductor Incorporated | Buried field ring field effect transistor (BUF-FET) integrated with cells implanted with hole supply path |
| CN103515450B (zh) * | 2012-06-29 | 2017-02-08 | 朱江 | 一种沟槽电荷补偿肖特基半导体装置及其制造方法 |
| CN103413836A (zh) * | 2013-05-27 | 2013-11-27 | 上海恺创电子有限公司 | 沟槽栅肖特基势垒二极管 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6426542B1 (en) | 1998-05-01 | 2002-07-30 | Allen Tan | Schottky diode with dielectric trench |
| CN2811144Y (zh) | 2005-04-25 | 2006-08-30 | 张希华 | 自行车直拉滚动斜楔增力盘式制动器 |
| CN2820570Y (zh) | 2005-07-22 | 2006-09-27 | 齐济 | 节约型墨水瓶 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5612567A (en) * | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
| JP2006120979A (ja) * | 2004-10-25 | 2006-05-11 | Sanyo Electric Co Ltd | 保護素子およびそれを用いた半導体装置 |
-
2010
- 2010-12-17 TW TW099224484U patent/TWM403749U/zh not_active IP Right Cessation
-
2011
- 2011-10-12 CN CN2011203865081U patent/CN202307900U/zh not_active Expired - Lifetime
- 2011-11-03 DE DE202011107497U patent/DE202011107497U1/de not_active Expired - Lifetime
- 2011-11-18 KR KR2020110010229U patent/KR200470297Y1/ko active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6426542B1 (en) | 1998-05-01 | 2002-07-30 | Allen Tan | Schottky diode with dielectric trench |
| CN2811144Y (zh) | 2005-04-25 | 2006-08-30 | 张希华 | 自行车直拉滚动斜楔增力盘式制动器 |
| CN2820570Y (zh) | 2005-07-22 | 2006-09-27 | 齐济 | 节约型墨水瓶 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2650920A1 (en) * | 2012-04-13 | 2013-10-16 | Taiwan Semiconductor Co., Ltd. | Trenched semiconductor structure |
| EP2650921A1 (en) * | 2012-04-13 | 2013-10-16 | Taiwan Semiconductor Co., Ltd. | Semiconductor structure comprising active region trenches arranged in a dispersed manner |
| KR200474421Y1 (ko) | 2012-04-13 | 2014-09-15 | 타이완 세미컨덕터 컴퍼니, 리미티드 | 반도체 소자 트렌치 구조 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN202307900U (zh) | 2012-07-04 |
| KR20120004645U (ko) | 2012-06-27 |
| TWM403749U (en) | 2011-05-11 |
| KR200470297Y1 (ko) | 2013-12-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R207 | Utility model specification |
Effective date: 20120419 |
|
| R150 | Utility model maintained after payment of first maintenance fee after three years | ||
| R150 | Utility model maintained after payment of first maintenance fee after three years |
Effective date: 20141208 |
|
| R151 | Utility model maintained after payment of second maintenance fee after six years | ||
| R152 | Utility model maintained after payment of third maintenance fee after eight years | ||
| R071 | Expiry of right |