TWM403749U - Schottky diode structure - Google Patents
Schottky diode structure Download PDFInfo
- Publication number
- TWM403749U TWM403749U TW099224484U TW99224484U TWM403749U TW M403749 U TWM403749 U TW M403749U TW 099224484 U TW099224484 U TW 099224484U TW 99224484 U TW99224484 U TW 99224484U TW M403749 U TWM403749 U TW M403749U
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- diode structure
- schottky diode
- doped
- high concentration
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 12
- 241000238631 Hexapoda Species 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 79
- 230000000694 effects Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241000272525 Anas platyrhynchos Species 0.000 description 1
- 241000411532 Erites Species 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 235000006040 Prunus persica var persica Nutrition 0.000 description 1
- 240000006413 Prunus persica var. persica Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
- H01L29/8725—Schottky diodes of the trench MOS barrier type [TMBS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099224484U TWM403749U (en) | 2010-12-17 | 2010-12-17 | Schottky diode structure |
| CN2011203865081U CN202307900U (zh) | 2010-12-17 | 2011-10-12 | 肖特基二极管结构 |
| DE202011107497U DE202011107497U1 (de) | 2010-12-17 | 2011-11-03 | Struktur einer Schottky-Diode |
| KR2020110010229U KR200470297Y1 (ko) | 2010-12-17 | 2011-11-18 | 쇼트키 다이오드 구조 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW099224484U TWM403749U (en) | 2010-12-17 | 2010-12-17 | Schottky diode structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM403749U true TWM403749U (en) | 2011-05-11 |
Family
ID=45077618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099224484U TWM403749U (en) | 2010-12-17 | 2010-12-17 | Schottky diode structure |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR200470297Y1 (ko) |
| CN (1) | CN202307900U (ko) |
| DE (1) | DE202011107497U1 (ko) |
| TW (1) | TWM403749U (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956684A (zh) * | 2011-08-25 | 2013-03-06 | 万国半导体股份有限公司 | 集成晶胞的掩埋场环场效应晶体管植入空穴供应通路 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM435716U (en) * | 2012-04-13 | 2012-08-11 | Taiwan Semiconductor Co Ltd | The active region of the trench distributed arrangement of the semiconductor device structure |
| TWM439885U (en) | 2012-04-13 | 2012-10-21 | Taiwan Semiconductor Co Ltd | Semiconductor component trench structure |
| CN103515450B (zh) * | 2012-06-29 | 2017-02-08 | 朱江 | 一种沟槽电荷补偿肖特基半导体装置及其制造方法 |
| CN103413836A (zh) * | 2013-05-27 | 2013-11-27 | 上海恺创电子有限公司 | 沟槽栅肖特基势垒二极管 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5612567A (en) * | 1996-05-13 | 1997-03-18 | North Carolina State University | Schottky barrier rectifiers and methods of forming same |
| US6303969B1 (en) | 1998-05-01 | 2001-10-16 | Allen Tan | Schottky diode with dielectric trench |
| JP2006120979A (ja) * | 2004-10-25 | 2006-05-11 | Sanyo Electric Co Ltd | 保護素子およびそれを用いた半導体装置 |
| CN2811144Y (zh) | 2005-04-25 | 2006-08-30 | 张希华 | 自行车直拉滚动斜楔增力盘式制动器 |
| CN2820570Y (zh) | 2005-07-22 | 2006-09-27 | 齐济 | 节约型墨水瓶 |
-
2010
- 2010-12-17 TW TW099224484U patent/TWM403749U/zh not_active IP Right Cessation
-
2011
- 2011-10-12 CN CN2011203865081U patent/CN202307900U/zh not_active Expired - Lifetime
- 2011-11-03 DE DE202011107497U patent/DE202011107497U1/de not_active Expired - Lifetime
- 2011-11-18 KR KR2020110010229U patent/KR200470297Y1/ko active IP Right Grant
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102956684A (zh) * | 2011-08-25 | 2013-03-06 | 万国半导体股份有限公司 | 集成晶胞的掩埋场环场效应晶体管植入空穴供应通路 |
| TWI466194B (zh) * | 2011-08-25 | 2014-12-21 | Alpha & Omega Semiconductor | 集成晶胞的掩埋場環場效應電晶體植入空穴供應通路 |
| CN102956684B (zh) * | 2011-08-25 | 2015-11-18 | 万国半导体股份有限公司 | 集成晶胞的掩埋场环场效应晶体管植入空穴供应通路 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN202307900U (zh) | 2012-07-04 |
| KR20120004645U (ko) | 2012-06-27 |
| DE202011107497U1 (de) | 2012-02-27 |
| KR200470297Y1 (ko) | 2013-12-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4K | Expiration of patent term of a granted utility model |