DE2014677A1 - - Google Patents

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Publication number
DE2014677A1
DE2014677A1 DE19702014677 DE2014677A DE2014677A1 DE 2014677 A1 DE2014677 A1 DE 2014677A1 DE 19702014677 DE19702014677 DE 19702014677 DE 2014677 A DE2014677 A DE 2014677A DE 2014677 A1 DE2014677 A1 DE 2014677A1
Authority
DE
Germany
Prior art keywords
semiconductor
superlattice
energy
semiconductor component
component according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19702014677
Other languages
German (de)
English (en)
Other versions
DE2014677B2 (de
DE2014677C3 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE2014677A1 publication Critical patent/DE2014677A1/de
Publication of DE2014677B2 publication Critical patent/DE2014677B2/de
Application granted granted Critical
Publication of DE2014677C3 publication Critical patent/DE2014677C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8171—Doping structures, e.g. doping superlattices or nipi superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
DE2014677A 1969-04-01 1970-03-26 Halbleiteroszillatorelement mit Übergitter Expired DE2014677C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81187169A 1969-04-01 1969-04-01

Publications (3)

Publication Number Publication Date
DE2014677A1 true DE2014677A1 (cg-RX-API-DMAC7.html) 1970-10-15
DE2014677B2 DE2014677B2 (de) 1978-11-09
DE2014677C3 DE2014677C3 (de) 1979-07-19

Family

ID=25207828

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2014677A Expired DE2014677C3 (de) 1969-04-01 1970-03-26 Halbleiteroszillatorelement mit Übergitter

Country Status (2)

Country Link
US (1) US3626257A (cg-RX-API-DMAC7.html)
DE (1) DE2014677C3 (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2388411A1 (fr) * 1977-04-20 1978-11-17 Ibm Dispositif semi-conducteur et son procede de fabrication
EP0206117A1 (en) * 1985-06-14 1986-12-30 AT&T Corp. A photodetector

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* Cited by examiner, † Cited by third party
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FR2110317B1 (cg-RX-API-DMAC7.html) * 1970-10-09 1975-04-18 Siemens Ag
DE2139436A1 (de) * 1971-08-06 1973-02-22 Licentia Gmbh Halbleiterlaser
DE2261527C2 (de) * 1972-12-15 1983-04-21 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Halbleiterkörper mit in einer vorgegebenen Richtung abwechselnd aufeinanderfolgenden n- und p-dotierten Zonen, Verfahren zu seiner Herstellung und Verwendungen des Halbleiterkörpers
FR2225207B1 (cg-RX-API-DMAC7.html) * 1973-04-16 1978-04-21 Ibm
US3893148A (en) * 1974-02-25 1975-07-01 Us Navy Layered superlattic switching and negative resistance devices
US4103312A (en) * 1977-06-09 1978-07-25 International Business Machines Corporation Semiconductor memory devices
USRE33671E (en) * 1978-04-24 1991-08-20 At&T Bell Laboratories Method of making high mobility multilayered heterojunction device employing modulated doping
US4163237A (en) * 1978-04-24 1979-07-31 Bell Telephone Laboratories, Incorporated High mobility multilayered heterojunction devices employing modulated doping
US4194935A (en) * 1978-04-24 1980-03-25 Bell Telephone Laboratories, Incorporated Method of making high mobility multilayered heterojunction devices employing modulated doping
US4205331A (en) * 1978-06-09 1980-05-27 The United States Of America As Represented By The Secretary Of The Army Infrared optical devices of layered structure
US4250515A (en) * 1978-06-09 1981-02-10 The United States Of America As Represented By The Secretary Of The Army Heterojunction superlattice with potential well depth greater than half the bandgap
US4198644A (en) * 1978-06-09 1980-04-15 The United States Of America As Represented By The Secretary Of The Army Tunnel diode
US4208667A (en) * 1978-06-09 1980-06-17 The United States Of America As Represented By The Secretary Of The Army Controlled absorption in heterojunction structures
US4163238A (en) * 1978-06-09 1979-07-31 The United States Of America As Represented By The Secretary Of The Army Infrared semiconductor device with superlattice region
US4257055A (en) * 1979-07-26 1981-03-17 University Of Illinois Foundation Negative resistance heterojunction devices
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
US4348686A (en) * 1980-07-28 1982-09-07 The United States Of America As Represented By The Secretary Of The Army Microwave-infrared detector with semiconductor superlattice region
US4349796A (en) * 1980-12-15 1982-09-14 Bell Telephone Laboratories, Incorporated Devices incorporating phonon filters
US4517047A (en) * 1981-01-23 1985-05-14 The United States Of America As Represented By The Secretary Of The Army MBE growth technique for matching superlattices grown on GaAs substrates
US4378255A (en) * 1981-05-06 1983-03-29 University Of Illinois Foundation Method for producing integrated semiconductor light emitter
GB2106314A (en) * 1981-09-18 1983-04-07 Philips Electronic Associated Infra-red radiation imaging devices
US4675709A (en) * 1982-06-21 1987-06-23 Xerox Corporation Quantized layered structures with adjusted indirect bandgap transitions
US4469977A (en) * 1982-10-19 1984-09-04 The United States Of America As Represented By The Secretary Of The Navy Superlattice ultrasonic wave generator
US4597638A (en) * 1983-02-28 1986-07-01 At&T Bell Laboratories Nonlinear optical apparatus
NL8301745A (nl) * 1983-05-17 1984-12-17 Philips Nv Halfgeleiderinrichting.
DE3480631D1 (de) * 1983-06-24 1990-01-04 Nec Corp Halbleiterstruktur mit uebergitter hoher traegerdichte.
JPS6028268A (ja) * 1983-07-26 1985-02-13 Agency Of Ind Science & Technol 半導体装置
US4642144A (en) * 1983-10-06 1987-02-10 Exxon Research And Engineering Company Proximity doping of amorphous semiconductors
US4558336A (en) * 1984-03-02 1985-12-10 The United States Of America As Represented By The Secretary Of The Army MBE Growth technique for matching superlattices grown on GaAs substrates
US4575924A (en) * 1984-07-02 1986-03-18 Texas Instruments Incorporated Process for fabricating quantum-well devices utilizing etch and refill techniques
JPS61210679A (ja) * 1985-03-15 1986-09-18 Sony Corp 半導体装置
JPS61241985A (ja) * 1985-04-19 1986-10-28 Eizo Yamaga 赤外線検知装置
US4661829A (en) * 1985-06-05 1987-04-28 American Telephone And Telegraph Company, At&T Bell Laboratories Device using ordered semiconductor alloy
USRE33693E (en) * 1985-06-05 1991-09-17 At&T Bell Laboratories Device using ordered semiconductor alloy
US4843439A (en) * 1985-08-28 1989-06-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Tailorable infrared sensing device with strain layer superlattice structure
CA1282671C (en) * 1985-11-18 1991-04-09 John Condon Bean Device having strain induced region
US4725870A (en) * 1985-11-18 1988-02-16 American Telephone And Telegraph Company, At&T Bell Laboratories Silicon germanium photodetector
DE3542482A1 (de) * 1985-11-30 1987-06-04 Licentia Gmbh Modulationsdotierter feldeffekttransistor
US4814837A (en) * 1986-03-13 1989-03-21 The United States Of America As Represented By The Secretary Of The Navy Quantum well electron barrier diode
JP2587623B2 (ja) * 1986-11-22 1997-03-05 新技術事業団 化合物半導体のエピタキシヤル結晶成長方法
US5194983A (en) * 1986-11-27 1993-03-16 Centre National De La Recherche Scientifique (C.N.R.S.) Superlattice optical monitor
US4769341A (en) * 1986-12-29 1988-09-06 American Telephone And Telegraph Company, At&T Bell Laboratories Method of fabricating non-silicon materials on silicon substrate using an alloy of Sb and Group IV semiconductors
US4947223A (en) * 1987-08-31 1990-08-07 The United States Of America As Represented By The United States Department Of Energy Semiconductor devices incorporating multilayer interference regions
WO1989006050A1 (en) * 1987-12-23 1989-06-29 British Telecommunications Public Limited Company Semiconductor heterostructures
US5138408A (en) * 1988-04-15 1992-08-11 Nec Corporation Resonant tunneling hot carrier transistor
US5012318A (en) * 1988-09-05 1991-04-30 Nec Corporation Hybrid semiconductor device implemented by combination of heterojunction bipolar transistor and field effect transistor
JP2687519B2 (ja) * 1988-12-06 1997-12-08 日本電気株式会社 半導体装置及びその製造方法
US5329257A (en) * 1993-04-30 1994-07-12 International Business Machines Corproation SiGe transferred electron device and oscillator using same
DE4406085A1 (de) * 1994-02-24 1995-08-31 Renk Karl Friedrich Halbleitervorrichtung
US5422533A (en) * 1994-03-09 1995-06-06 The United States Of America As Represented By The Secretary Of The Army Piezoelectric resonator
EP0759640B1 (en) * 1995-08-17 2003-06-11 Paul-Drude-Institut für Festkörperelektronik Semiconductor superlattice oscillator and methods of manufacturing and operating the same
US5684737A (en) * 1995-12-08 1997-11-04 The Regents Of The University Of California SRAM cell utilizing bistable diode having GeSi structure therein
CN1195895A (zh) 1997-04-10 1998-10-14 李炳辉 半导体量子振荡器件
JP3427179B2 (ja) * 2000-02-16 2003-07-14 東北大学長 核スピン制御素子及びその制御方法
US7015494B2 (en) 2002-07-10 2006-03-21 Micron Technology, Inc. Assemblies displaying differential negative resistance
US20060169592A1 (en) * 2005-01-31 2006-08-03 Hewlett-Packard Development Company, L.P. Periodic layered structures and methods therefor
US8426845B2 (en) 2010-05-07 2013-04-23 Svt Associates, Inc. Long wavelength infrared superlattice

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US3171068A (en) * 1960-10-19 1965-02-23 Merck & Co Inc Semiconductor diodes
US3328584A (en) * 1964-01-17 1967-06-27 Int Rectifier Corp Five-layer light switch
US3479611A (en) * 1966-01-21 1969-11-18 Int Standard Electric Corp Series operated gunn effect devices
US3467896A (en) * 1966-03-28 1969-09-16 Varian Associates Heterojunctions and domain control in bulk negative conductivity semiconductors
US3356866A (en) * 1966-08-17 1967-12-05 Bell Telephone Labor Inc Apparatus employing avalanche transit time diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2388411A1 (fr) * 1977-04-20 1978-11-17 Ibm Dispositif semi-conducteur et son procede de fabrication
EP0206117A1 (en) * 1985-06-14 1986-12-30 AT&T Corp. A photodetector

Also Published As

Publication number Publication date
DE2014677B2 (de) 1978-11-09
US3626257A (en) 1971-12-07
DE2014677C3 (de) 1979-07-19

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8340 Patent of addition ceased/non-payment of fee of main patent