DE2001339A1 - Verfahren zur Erhoehung der Adhaesion von Photolacken - Google Patents

Verfahren zur Erhoehung der Adhaesion von Photolacken

Info

Publication number
DE2001339A1
DE2001339A1 DE19702001339 DE2001339A DE2001339A1 DE 2001339 A1 DE2001339 A1 DE 2001339A1 DE 19702001339 DE19702001339 DE 19702001339 DE 2001339 A DE2001339 A DE 2001339A DE 2001339 A1 DE2001339 A1 DE 2001339A1
Authority
DE
Germany
Prior art keywords
photoresist
oxide
silicon dioxide
adhesion
oxide surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19702001339
Other languages
German (de)
English (en)
Inventor
Couture Roger Arthur
Lajza Jun John James
Gleason Robert Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2001339A1 publication Critical patent/DE2001339A1/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE19702001339 1969-01-15 1970-01-13 Verfahren zur Erhoehung der Adhaesion von Photolacken Pending DE2001339A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79121469A 1969-01-15 1969-01-15

Publications (1)

Publication Number Publication Date
DE2001339A1 true DE2001339A1 (de) 1970-07-23

Family

ID=25153001

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702001339 Pending DE2001339A1 (de) 1969-01-15 1970-01-13 Verfahren zur Erhoehung der Adhaesion von Photolacken

Country Status (4)

Country Link
US (1) US3586554A (enExample)
DE (1) DE2001339A1 (enExample)
FR (1) FR2028331B1 (enExample)
GB (1) GB1276286A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3027941A1 (de) * 1980-07-23 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von reliefstrukturen aus doppellackschichten fuer integrierte halbleiterschaltungen, wobei zur strukturierung hochenergetische strahlung verwendet wird
EP0068098A3 (en) * 1981-06-30 1983-09-28 International Business Machines Corporation Process for fabricating a device involving use of a photoresist
EP0200141A3 (en) * 1985-04-26 1988-01-13 Nippon Zeon Co., Ltd. Photoresist composition
EP0792195A4 (en) * 1994-11-22 1999-05-26 Complex Fluid Systems Inc NON-AMINIC PHOTOSENSITIVE RESIN ADHESION PROMOTERS FOR MICROELECTRONIC APPLICATIONS

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3831432A (en) * 1972-09-05 1974-08-27 Texas Instruments Inc Environment monitoring device and system
JPS5218098B2 (enExample) * 1973-05-04 1977-05-19
GB1513368A (en) * 1974-07-08 1978-06-07 Vickers Ltd Processing of radiation-sensitive members
US4075367A (en) * 1976-03-18 1978-02-21 Ncr Corporation Semiconductor processing of silicon nitride
US4173683A (en) * 1977-06-13 1979-11-06 Rca Corporation Chemically treating the overcoat of a semiconductor device
US4209356A (en) * 1978-10-18 1980-06-24 General Electric Company Selective etching of polymeric materials embodying silicones via reactor plasmas
JPS60147729A (ja) * 1984-01-12 1985-08-03 Toshiba Corp ホトレジスト組成物
US5641541A (en) * 1995-09-29 1997-06-24 Taiwan Semiconductor Manufacturing Company Process to apply photoresist printer to a wafer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3027941A1 (de) * 1980-07-23 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von reliefstrukturen aus doppellackschichten fuer integrierte halbleiterschaltungen, wobei zur strukturierung hochenergetische strahlung verwendet wird
EP0068098A3 (en) * 1981-06-30 1983-09-28 International Business Machines Corporation Process for fabricating a device involving use of a photoresist
EP0200141A3 (en) * 1985-04-26 1988-01-13 Nippon Zeon Co., Ltd. Photoresist composition
EP0792195A4 (en) * 1994-11-22 1999-05-26 Complex Fluid Systems Inc NON-AMINIC PHOTOSENSITIVE RESIN ADHESION PROMOTERS FOR MICROELECTRONIC APPLICATIONS

Also Published As

Publication number Publication date
GB1276286A (en) 1972-06-01
US3586554A (en) 1971-06-22
FR2028331A1 (enExample) 1970-10-09
FR2028331B1 (enExample) 1974-03-01

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