DE19952932C1 - LED-Weißlichtquelle mit breitbandiger Anregung - Google Patents

LED-Weißlichtquelle mit breitbandiger Anregung

Info

Publication number
DE19952932C1
DE19952932C1 DE19952932A DE19952932A DE19952932C1 DE 19952932 C1 DE19952932 C1 DE 19952932C1 DE 19952932 A DE19952932 A DE 19952932A DE 19952932 A DE19952932 A DE 19952932A DE 19952932 C1 DE19952932 C1 DE 19952932C1
Authority
DE
Germany
Prior art keywords
led
light source
white light
junctions
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19952932A
Other languages
German (de)
English (en)
Inventor
Karl-Heinz Schlereth
Volker Haerle
Norbert Stath
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE19952932A priority Critical patent/DE19952932C1/de
Priority to PCT/DE2000/003520 priority patent/WO2001033640A1/de
Priority to JP2001535238A priority patent/JP4681184B2/ja
Priority to TW089122534A priority patent/TW476166B/zh
Application granted granted Critical
Publication of DE19952932C1 publication Critical patent/DE19952932C1/de
Priority to US10/137,885 priority patent/US6734467B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Devices (AREA)
DE19952932A 1999-11-03 1999-11-03 LED-Weißlichtquelle mit breitbandiger Anregung Expired - Lifetime DE19952932C1 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE19952932A DE19952932C1 (de) 1999-11-03 1999-11-03 LED-Weißlichtquelle mit breitbandiger Anregung
PCT/DE2000/003520 WO2001033640A1 (de) 1999-11-03 2000-10-06 Led-weisslichtquelle mit breitbandiger anregung
JP2001535238A JP4681184B2 (ja) 1999-11-03 2000-10-06 広帯域な励起を有する発光ダイオード白色光源
TW089122534A TW476166B (en) 1999-11-03 2000-10-26 LED white-light source with broad-band excitation
US10/137,885 US6734467B2 (en) 1999-11-03 2002-05-03 LED white light source with broadband excitation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19952932A DE19952932C1 (de) 1999-11-03 1999-11-03 LED-Weißlichtquelle mit breitbandiger Anregung

Publications (1)

Publication Number Publication Date
DE19952932C1 true DE19952932C1 (de) 2001-05-03

Family

ID=7927797

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19952932A Expired - Lifetime DE19952932C1 (de) 1999-11-03 1999-11-03 LED-Weißlichtquelle mit breitbandiger Anregung

Country Status (5)

Country Link
US (1) US6734467B2 (https=)
JP (1) JP4681184B2 (https=)
DE (1) DE19952932C1 (https=)
TW (1) TW476166B (https=)
WO (1) WO2001033640A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10214951A1 (de) * 2002-04-04 2003-05-22 G L I Global Light Ind Gmbh Lichtabstrahlendes Halbleiterbauelement
DE102005020695B4 (de) * 2004-04-30 2006-06-22 Optotransmitter-Umweltschutz-Technologie E.V. Vorrichtung zur Emission von Strahlung mit einstellbarer Spektraleigenschaft
WO2009099423A3 (en) * 2008-02-01 2009-10-01 Cree, Inc. Semiconductor light emitting devices with high color rendering
WO2014184136A1 (de) * 2013-05-14 2014-11-20 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zu seiner herstellung

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JP3404064B2 (ja) * 1993-03-09 2003-05-06 株式会社日立製作所 半導体装置及びその製造方法
US6633120B2 (en) 1998-11-19 2003-10-14 Unisplay S.A. LED lamps
GB2366074A (en) * 2000-02-15 2002-02-27 Hassan Paddy Abdel Salam LED light source with two vertically-stacked LEDs of different colours
US7768210B2 (en) * 1999-12-22 2010-08-03 General Electric Company Hybrid electroluminescent devices
AUPQ818100A0 (en) 2000-06-15 2000-07-06 Arlec Australia Limited Led lamp
US7320632B2 (en) 2000-06-15 2008-01-22 Lednium Pty Limited Method of producing a lamp
KR20040029385A (ko) * 2001-08-01 2004-04-06 남 영 김 화상표시장치
WO2003017320A1 (en) * 2001-08-21 2003-02-27 Nam-Young Kim Lamp utilizing a light emitted diode
US6970512B2 (en) 2001-08-28 2005-11-29 Sbc Technology Resources, Inc. Method and system to improve the transport of compressed video data
JP4307113B2 (ja) * 2002-03-19 2009-08-05 宣彦 澤木 半導体発光素子およびその製造方法
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
US6822991B2 (en) * 2002-09-30 2004-11-23 Lumileds Lighting U.S., Llc Light emitting devices including tunnel junctions
US6806658B2 (en) * 2003-03-07 2004-10-19 Agilent Technologies, Inc. Method for making an LED
CN100502062C (zh) * 2003-04-30 2009-06-17 美商克立股份有限公司 具有小型光学元件的高功率发光器封装
US7005679B2 (en) 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
CN100477256C (zh) * 2003-06-24 2009-04-08 吉尔科有限公司 用于led芯片的白光生成的全光谱荧光体混合物
WO2005004202A2 (en) * 2003-06-24 2005-01-13 Gelcore Llc Full spectrum phosphor blends for white light generation with led chips
JP4699681B2 (ja) * 2003-06-27 2011-06-15 パナソニック株式会社 Ｌｅｄモジュール、および照明装置
TW200525779A (en) * 2004-01-27 2005-08-01 Super Nova Optoelectronics Corp White-like light emitting device and its manufacturing method
DE102004004765A1 (de) * 2004-01-29 2005-09-01 Rwe Space Solar Power Gmbh Aktive Zonen aufweisende Halbleiterstruktur
KR101426836B1 (ko) * 2004-05-05 2014-08-05 렌슬러 폴리테크닉 인스티튜트 고체-상태 에미터 및 하향-변환 재료를 이용한 고효율 광 소스
US7837348B2 (en) * 2004-05-05 2010-11-23 Rensselaer Polytechnic Institute Lighting system using multiple colored light emitting sources and diffuser element
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7427366B2 (en) * 2004-07-06 2008-09-23 Sarnoff Corporation Efficient, green-emitting phosphors, and combinations with red-emitting phosphors
US20060012289A1 (en) * 2004-07-19 2006-01-19 General Electric Company Hybrid electroluminescent devices
US7323721B2 (en) * 2004-09-09 2008-01-29 Blue Photonics Inc. Monolithic multi-color, multi-quantum well semiconductor LED
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7719015B2 (en) * 2004-12-09 2010-05-18 3M Innovative Properties Company Type II broadband or polychromatic LED's
US7745814B2 (en) * 2004-12-09 2010-06-29 3M Innovative Properties Company Polychromatic LED's and related semiconductor devices
TWI247439B (en) * 2004-12-17 2006-01-11 Genesis Photonics Inc Light-emitting diode device
CN1684279A (zh) * 2005-02-25 2005-10-19 炬鑫科技股份有限公司 发光元件
FR2883653B1 (fr) * 2005-03-22 2007-05-25 Gemplus Sa Module electronique et carte a puce avec indicateur lumineux
US7276183B2 (en) * 2005-03-25 2007-10-02 Sarnoff Corporation Metal silicate-silica-based polymorphous phosphors and lighting devices
US7690167B2 (en) * 2005-04-28 2010-04-06 Antonic James P Structural support framing assembly
TWM279023U (en) * 2005-04-29 2005-10-21 Super Nova Optoelectronics Cor White light emitting diode device
CN100508223C (zh) * 2005-05-24 2009-07-01 新世纪光电股份有限公司 二极管发光装置
CN100508224C (zh) * 2005-06-13 2009-07-01 新世纪光电股份有限公司 具有发光二极管的白光装置
CA2597697C (en) * 2005-06-23 2014-12-02 Rensselaer Polytechnic Institute Package design for producing white light with short-wavelength leds and down-conversion materials
JP5285835B2 (ja) * 2005-07-13 2013-09-11 株式会社東芝 半導体素子およびその製造方法
EP1958257A2 (en) * 2005-11-24 2008-08-20 Koninklijke Philips Electronics N.V. Light emitting diode construction
US20070125984A1 (en) * 2005-12-01 2007-06-07 Sarnoff Corporation Phosphors protected against moisture and LED lighting devices
US8906262B2 (en) * 2005-12-02 2014-12-09 Lightscape Materials, Inc. Metal silicate halide phosphors and LED lighting devices using the same
US20070145879A1 (en) * 2005-12-22 2007-06-28 Abramov Vladimir S Light emitting halogen-silicate photophosphor compositions and systems
KR20090009772A (ko) 2005-12-22 2009-01-23 크리 엘이디 라이팅 솔루션즈, 인크. 조명 장치
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
JP2007266579A (ja) * 2006-02-28 2007-10-11 Toshiba Lighting & Technology Corp 発光装置
JP2007281257A (ja) * 2006-04-07 2007-10-25 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
CN102437152A (zh) 2006-04-24 2012-05-02 克利公司 侧视表面安装式白光led
US7952110B2 (en) 2006-06-12 2011-05-31 3M Innovative Properties Company LED device with re-emitting semiconductor construction and converging optical element
US20070284565A1 (en) * 2006-06-12 2007-12-13 3M Innovative Properties Company Led device with re-emitting semiconductor construction and optical element
EP2033234A4 (en) * 2006-06-12 2013-11-06 3M Innovative Properties Co LED ARRANGEMENT WITH RE-ESTIMATING SEMICONDUCTOR CONSTRUCTION AND CONVERGING OPTICAL ELEMENT
US7863634B2 (en) * 2006-06-12 2011-01-04 3M Innovative Properties Company LED device with re-emitting semiconductor construction and reflector
US7902542B2 (en) * 2006-06-14 2011-03-08 3M Innovative Properties Company Adapted LED device with re-emitting semiconductor construction
US7703942B2 (en) * 2006-08-31 2010-04-27 Rensselaer Polytechnic Institute High-efficient light engines using light emitting diodes
US20100224890A1 (en) * 2006-09-18 2010-09-09 Cree, Inc. Light emitting diode chip with electrical insulation element
US7789531B2 (en) 2006-10-02 2010-09-07 Illumitex, Inc. LED system and method
TW200833814A (en) * 2006-10-03 2008-08-16 Sarnoff Corp Metal silicate halide phosphors and LED lighting devices using the same
US7889421B2 (en) 2006-11-17 2011-02-15 Rensselaer Polytechnic Institute High-power white LEDs and manufacturing method thereof
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US9431589B2 (en) * 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US20090159915A1 (en) * 2007-12-19 2009-06-25 Shaul Branchevsky Led insert module and multi-layer lens
CN101939849A (zh) 2008-02-08 2011-01-05 伊鲁米特克有限公司 用于发射器层成形的系统和方法
KR20100128297A (ko) 2008-02-15 2010-12-07 크리, 인코포레이티드 백색 광 출력을 제공하기 위한 광대역 발광 장치 램프들
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8575592B2 (en) * 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
US9331252B2 (en) 2011-08-23 2016-05-03 Micron Technology, Inc. Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods
US9541242B2 (en) * 2012-03-01 2017-01-10 Koninklijke Philips N.V. LED lighting arrangement
FR3004005B1 (fr) * 2013-03-28 2016-11-25 Commissariat Energie Atomique Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
US9601656B1 (en) * 2014-06-13 2017-03-21 Silego Technology, Inc. Method of manufacturing low cost, high efficiency LED
US10054485B2 (en) 2016-03-17 2018-08-21 Raytheon Company UV LED-phosphor based hyperspectral calibrator
US10371325B1 (en) * 2018-06-25 2019-08-06 Intematix Corporation Full spectrum white light emitting devices
JP7101347B2 (ja) 2019-12-27 2022-07-15 日亜化学工業株式会社 発光素子の製造方法

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WO1998054929A2 (en) * 1997-05-27 1998-12-03 Koninklijke Philips Electronics N.V. Uv/blue led-phosphor device with efficient conversion of uv/blue light to visible light
US5851905A (en) * 1996-07-11 1998-12-22 North Carolina State University Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows

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US5851905A (en) * 1996-07-11 1998-12-22 North Carolina State University Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows
WO1998012757A1 (de) * 1996-09-20 1998-03-26 Siemens Aktiengesellschaft Wellenlängenkonvertierende vergussmasse, deren verwendung und verfahren zu deren herstellung
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10214951A1 (de) * 2002-04-04 2003-05-22 G L I Global Light Ind Gmbh Lichtabstrahlendes Halbleiterbauelement
DE102005020695B4 (de) * 2004-04-30 2006-06-22 Optotransmitter-Umweltschutz-Technologie E.V. Vorrichtung zur Emission von Strahlung mit einstellbarer Spektraleigenschaft
WO2009099423A3 (en) * 2008-02-01 2009-10-01 Cree, Inc. Semiconductor light emitting devices with high color rendering
US8178888B2 (en) 2008-02-01 2012-05-15 Cree, Inc. Semiconductor light emitting devices with high color rendering
WO2014184136A1 (de) * 2013-05-14 2014-11-20 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zu seiner herstellung
US9543471B2 (en) 2013-05-14 2017-01-10 Osram Opto Semiconductors Gmbh Optoelectronic component and method for the production thereof

Also Published As

Publication number Publication date
WO2001033640A1 (de) 2001-05-10
JP4681184B2 (ja) 2011-05-11
US6734467B2 (en) 2004-05-11
TW476166B (en) 2002-02-11
US20020167014A1 (en) 2002-11-14
JP2003513474A (ja) 2003-04-08

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Legal Events

Date Code Title Description
8100 Publication of patent without earlier publication of application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: OSRAM OPTO SEMICONDUCTORS GMBH, 93049 REGENSBURG,

R071 Expiry of right