DE1955950A1 - Halbleitermaterial und -vorrichtungen - Google Patents

Halbleitermaterial und -vorrichtungen

Info

Publication number
DE1955950A1
DE1955950A1 DE19691955950 DE1955950A DE1955950A1 DE 1955950 A1 DE1955950 A1 DE 1955950A1 DE 19691955950 DE19691955950 DE 19691955950 DE 1955950 A DE1955950 A DE 1955950A DE 1955950 A1 DE1955950 A1 DE 1955950A1
Authority
DE
Germany
Prior art keywords
indium
inas
semiconductor material
inp
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691955950
Other languages
German (de)
English (en)
Inventor
Rees Huw David
Cyril Hilsum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT RES DEV
Original Assignee
NAT RES DEV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT RES DEV filed Critical NAT RES DEV
Publication of DE1955950A1 publication Critical patent/DE1955950A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/088—Other phosphides containing plural metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/912—Charge transfer device using both electron and hole signal carriers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19691955950 1968-11-07 1969-11-06 Halbleitermaterial und -vorrichtungen Pending DE1955950A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB52759/68A GB1263709A (en) 1968-11-07 1968-11-07 Semiconductor devices

Publications (1)

Publication Number Publication Date
DE1955950A1 true DE1955950A1 (de) 1970-07-23

Family

ID=10465183

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691955950 Pending DE1955950A1 (de) 1968-11-07 1969-11-06 Halbleitermaterial und -vorrichtungen

Country Status (6)

Country Link
US (1) US3745427A (enExample)
CA (1) CA932628A (enExample)
DE (1) DE1955950A1 (enExample)
FR (1) FR2022797B1 (enExample)
GB (1) GB1263709A (enExample)
NL (1) NL6916757A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3602841A (en) * 1970-06-18 1971-08-31 Ibm High frequency bulk semiconductor amplifiers and oscillators
US4075651A (en) * 1976-03-29 1978-02-21 Varian Associates, Inc. High speed fet employing ternary and quarternary iii-v active layers
DE2926757C2 (de) * 1979-07-03 1983-08-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit negativem differentiellen Widerstand

Also Published As

Publication number Publication date
CA932628A (en) 1973-08-28
NL6916757A (enExample) 1970-05-11
US3745427A (en) 1973-07-10
FR2022797B1 (enExample) 1975-01-10
FR2022797A1 (enExample) 1970-08-07
GB1263709A (en) 1972-02-16

Similar Documents

Publication Publication Date Title
DE2844070C2 (enExample)
DE1295043B (de) Thermoelement zum Umwandeln von Waermeenergie in elektrische Energie mit einem wenigstens ueber einen Teil seiner Laenge aus einer Germanium-Silicium-Legierung bestehenden Schenkel
DE1180849B (de) Halbleiterbauelement mit einer Folge von Zonen abwechselnd entgegengesetzten Leitfaehigkeits-typs im Halbleiterkoerper und Verfahren zum Herstellen eines solchen Halbleiterbauelements
DE974364C (de) Verfahren zur Herstellung von P-N-Schichten in Halbleiterkoerpern durch Eintauchen in eine Schmelze
DE2251938A1 (de) Legierung zur thermoelektrischen energieumwandlung, verfahren zu deren herstellung und daraus gebildeter thermoelektrischer energieumwandler
DE1955950A1 (de) Halbleitermaterial und -vorrichtungen
DE960373C (de) Halbleitendes Material
DE3751781T2 (de) Festkörper-Elektronenstrahlerzeuger
DE1226716B (de) Kaltkathode, die aus einem dotierten Halbleiter-koerper besteht
Mataré Korngrenzenstruktur und Ladungsträgertransport in Halbleiterkristallen
DE1131808B (de) Verfahren zum Herstellen von n-leitenden Halbleiterkoerpern von Transistoren od. dgl. aus Elementen der IV. Gruppe des Periodischen Systems, insbesondere Germanium oder Silizium
Stadelmaier et al. Ueber ternaere Karbide der T-Metalle Nickel, Kobalt, Eisen und Mangan mit Gallium
Herrmann Der photoeffekt
DE1161036B (de) Verfahren zur Herstellung von hochdotierten AB-Halbleiterverbindungen
DE2165169C3 (de) Legierung, Herstellung derselben und Verwendung derselben für Vorrichtungen zur unmittelbaren thermoelektrischen Energieumwandlung
AT219097B (de) Tunnel-Diode und Verfahren zu ihrer Herstellung
DE3783162T2 (de) Verfahren zur herstellung eines kontaktes zwischen einem metall und einem verbindungshalbleiter mit hoeherem bandabstand und kontakt erhaeltlich durch dieses verfahren.
DE1037015B (de) Stoerstellenhalbleiter vom N-Typ fuer Transistoren od. dgl.
DE2019162C (de) Zinksulfidelement
DE2420741C2 (de) Herstellungsverfahren für eine Leuchtdiode
DE976791C (de) Verfahren zur Herstellung eines Halbleiterkristalls aus einer AB-Verbindung mit Zonen verschiedenen Leitungstyps
DE3315960A1 (de) Erzeugung von spannungsdifferenzen
DE1037481B (de) Thermoelement, insbesondere fuer thermoelektrische Kuehlung, und Verfahren zu seiner Herstellung
DE1116824B (de) Verfahren zum Herstellen einer elektrischen Halbleiteranordnung mit mindestens einemp-n-UEbergang
DE2019162B2 (de) Zinksulfidelement