FR2022797B1 - - Google Patents

Info

Publication number
FR2022797B1
FR2022797B1 FR6938282A FR6938282A FR2022797B1 FR 2022797 B1 FR2022797 B1 FR 2022797B1 FR 6938282 A FR6938282 A FR 6938282A FR 6938282 A FR6938282 A FR 6938282A FR 2022797 B1 FR2022797 B1 FR 2022797B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR6938282A
Other languages
French (fr)
Other versions
FR2022797A1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT RES DEV
National Research Development Corp UK
Original Assignee
NAT RES DEV
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT RES DEV, National Research Development Corp UK filed Critical NAT RES DEV
Publication of FR2022797A1 publication Critical patent/FR2022797A1/fr
Application granted granted Critical
Publication of FR2022797B1 publication Critical patent/FR2022797B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00Phosphorus; Compounds thereof
    • C01B25/08Other phosphides
    • C01B25/088Other phosphides containing plural metal
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00Bulk negative-resistance effect devices
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/065Gp III-V generic compounds-processing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/912Charge transfer device using both electron and hole signal carriers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR6938282A 1968-11-07 1969-11-06 Expired FR2022797B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB52759/68A GB1263709A (en) 1968-11-07 1968-11-07 Semiconductor devices

Publications (2)

Publication Number Publication Date
FR2022797A1 FR2022797A1 (enExample) 1970-08-07
FR2022797B1 true FR2022797B1 (enExample) 1975-01-10

Family

ID=10465183

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6938282A Expired FR2022797B1 (enExample) 1968-11-07 1969-11-06

Country Status (6)

Country Link
US (1) US3745427A (enExample)
CA (1) CA932628A (enExample)
DE (1) DE1955950A1 (enExample)
FR (1) FR2022797B1 (enExample)
GB (1) GB1263709A (enExample)
NL (1) NL6916757A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3602841A (en) * 1970-06-18 1971-08-31 Ibm High frequency bulk semiconductor amplifiers and oscillators
US4075651A (en) * 1976-03-29 1978-02-21 Varian Associates, Inc. High speed fet employing ternary and quarternary iii-v active layers
DE2926757C2 (de) * 1979-07-03 1983-08-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit negativem differentiellen Widerstand

Also Published As

Publication number Publication date
CA932628A (en) 1973-08-28
NL6916757A (enExample) 1970-05-11
US3745427A (en) 1973-07-10
FR2022797A1 (enExample) 1970-08-07
DE1955950A1 (de) 1970-07-23
GB1263709A (en) 1972-02-16

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Legal Events

Date Code Title Description
ST Notification of lapse