GB1263709A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1263709A
GB1263709A GB52759/68A GB5275968A GB1263709A GB 1263709 A GB1263709 A GB 1263709A GB 52759/68 A GB52759/68 A GB 52759/68A GB 5275968 A GB5275968 A GB 5275968A GB 1263709 A GB1263709 A GB 1263709A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
semiconductor devices
heading
nov
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB52759/68A
Other languages
English (en)
Inventor
Cyril Hilsum
Huw David Rees
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NAT RES DEV
National Research Development Corp UK
Original Assignee
NAT RES DEV
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NAT RES DEV, National Research Development Corp UK filed Critical NAT RES DEV
Priority to GB52759/68A priority Critical patent/GB1263709A/en
Priority to CA066840A priority patent/CA932628A/en
Priority to NL6916757A priority patent/NL6916757A/xx
Priority to DE19691955950 priority patent/DE1955950A1/de
Priority to FR6938282A priority patent/FR2022797B1/fr
Publication of GB1263709A publication Critical patent/GB1263709A/en
Priority to US00239586A priority patent/US3745427A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/088—Other phosphides containing plural metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/912—Charge transfer device using both electron and hole signal carriers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB52759/68A 1968-11-07 1968-11-07 Semiconductor devices Expired GB1263709A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB52759/68A GB1263709A (en) 1968-11-07 1968-11-07 Semiconductor devices
CA066840A CA932628A (en) 1968-11-07 1969-11-06 Semiconductor material and devices
NL6916757A NL6916757A (enExample) 1968-11-07 1969-11-06
DE19691955950 DE1955950A1 (de) 1968-11-07 1969-11-06 Halbleitermaterial und -vorrichtungen
FR6938282A FR2022797B1 (enExample) 1968-11-07 1969-11-06
US00239586A US3745427A (en) 1968-11-07 1972-03-30 Semiconductor device of p-type alloys

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB52759/68A GB1263709A (en) 1968-11-07 1968-11-07 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB1263709A true GB1263709A (en) 1972-02-16

Family

ID=10465183

Family Applications (1)

Application Number Title Priority Date Filing Date
GB52759/68A Expired GB1263709A (en) 1968-11-07 1968-11-07 Semiconductor devices

Country Status (6)

Country Link
US (1) US3745427A (enExample)
CA (1) CA932628A (enExample)
DE (1) DE1955950A1 (enExample)
FR (1) FR2022797B1 (enExample)
GB (1) GB1263709A (enExample)
NL (1) NL6916757A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3602841A (en) * 1970-06-18 1971-08-31 Ibm High frequency bulk semiconductor amplifiers and oscillators
US4075651A (en) * 1976-03-29 1978-02-21 Varian Associates, Inc. High speed fet employing ternary and quarternary iii-v active layers
DE2926757C2 (de) * 1979-07-03 1983-08-04 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit negativem differentiellen Widerstand

Also Published As

Publication number Publication date
CA932628A (en) 1973-08-28
NL6916757A (enExample) 1970-05-11
US3745427A (en) 1973-07-10
FR2022797B1 (enExample) 1975-01-10
FR2022797A1 (enExample) 1970-08-07
DE1955950A1 (de) 1970-07-23

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