DE1936143A1 - Verfahren zur Herstellung von Halbleiterelementen - Google Patents
Verfahren zur Herstellung von HalbleiterelementenInfo
- Publication number
- DE1936143A1 DE1936143A1 DE19691936143 DE1936143A DE1936143A1 DE 1936143 A1 DE1936143 A1 DE 1936143A1 DE 19691936143 DE19691936143 DE 19691936143 DE 1936143 A DE1936143 A DE 1936143A DE 1936143 A1 DE1936143 A1 DE 1936143A1
- Authority
- DE
- Germany
- Prior art keywords
- disc
- contact
- main surfaces
- ring
- peripheral part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000463 material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 230000002093 peripheral effect Effects 0.000 claims description 20
- 230000001154 acute effect Effects 0.000 claims description 6
- 239000003082 abrasive agent Substances 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- 238000005488 sandblasting Methods 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000010802 sludge Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims 1
- 244000228957 Ferula foetida Species 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/192—Base regions of thyristors
- H10D62/199—Anode base regions of thyristors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/959—Mechanical polishing of wafer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Braking Arrangements (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB37377/68A GB1211627A (en) | 1968-08-06 | 1968-08-06 | Methods of manufacture of semiconductor elements and elements manufactured therby |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1936143A1 true DE1936143A1 (de) | 1970-02-12 |
Family
ID=10396001
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691936143 Pending DE1936143A1 (de) | 1968-08-06 | 1969-07-16 | Verfahren zur Herstellung von Halbleiterelementen |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3611554A (en:Method) |
| JP (1) | JPS4915912B1 (en:Method) |
| CH (1) | CH512821A (en:Method) |
| DE (1) | DE1936143A1 (en:Method) |
| FR (1) | FR2016875B1 (en:Method) |
| GB (1) | GB1211627A (en:Method) |
| NL (1) | NL6911942A (en:Method) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2340107A1 (de) * | 1973-07-06 | 1975-01-23 | Bbc Brown Boveri & Cie | Leistungshalbleiterbauelement |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3943547A (en) * | 1970-12-26 | 1976-03-09 | Hitachi, Ltd. | Semiconductor device |
| US4110780A (en) * | 1973-07-06 | 1978-08-29 | Bbc Brown Boveri & Company, Limited | Semiconductor power component |
| DE2340128C3 (de) * | 1973-08-08 | 1982-08-12 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiterbauelement hoher Sperrfähigkeit |
| DE3137695A1 (de) * | 1981-09-22 | 1983-04-21 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit einem mehrschichten-halbleiterkoerper mit pnpn-schichtfolge und verfahren zu seiner herstellung |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1471981A (fr) * | 1965-03-25 | 1967-03-03 | Asea Ab | Thyristor avec zone latérale à gorge |
| FR1479716A (fr) * | 1965-05-11 | 1967-05-05 | Itt | Perfectionnements aux dispositifs à semi-conducteurs, tels que, par exemple, des thyristors de puissance |
-
1968
- 1968-08-06 GB GB37377/68A patent/GB1211627A/en not_active Expired
-
1969
- 1969-06-27 US US837183A patent/US3611554A/en not_active Expired - Lifetime
- 1969-07-10 JP JP44054173A patent/JPS4915912B1/ja active Pending
- 1969-07-16 DE DE19691936143 patent/DE1936143A1/de active Pending
- 1969-08-05 CH CH1188169A patent/CH512821A/de not_active IP Right Cessation
- 1969-08-05 FR FR6926786A patent/FR2016875B1/fr not_active Expired
- 1969-08-05 NL NL6911942A patent/NL6911942A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2340107A1 (de) * | 1973-07-06 | 1975-01-23 | Bbc Brown Boveri & Cie | Leistungshalbleiterbauelement |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6911942A (en:Method) | 1970-02-10 |
| FR2016875A1 (en:Method) | 1970-05-15 |
| US3611554A (en) | 1971-10-12 |
| GB1211627A (en) | 1970-11-11 |
| JPS4915912B1 (en:Method) | 1974-04-18 |
| FR2016875B1 (en:Method) | 1975-01-10 |
| CH512821A (de) | 1971-09-15 |
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