DE1920397A1 - Stabilisiertes Halbleiterbauelement - Google Patents
Stabilisiertes HalbleiterbauelementInfo
- Publication number
- DE1920397A1 DE1920397A1 DE19691920397 DE1920397A DE1920397A1 DE 1920397 A1 DE1920397 A1 DE 1920397A1 DE 19691920397 DE19691920397 DE 19691920397 DE 1920397 A DE1920397 A DE 1920397A DE 1920397 A1 DE1920397 A1 DE 1920397A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- conduction type
- metal contact
- semiconductor component
- insulator layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 239000012212 insulator Substances 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 12
- 230000000694 effects Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/408—Electrodes ; Multistep manufacturing processes therefor with an insulating layer with a particular dielectric or electrostatic property, e.g. with static charges or for controlling trapped charges or moving ions, or with a plate acting on the insulator potential or the insulator charges, e.g. for controlling charges effect or potential distribution in the insulating layer, or with a semi-insulating layer contacting directly the semiconductor surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691920397 DE1920397A1 (de) | 1969-04-22 | 1969-04-22 | Stabilisiertes Halbleiterbauelement |
| NL7002197A NL7002197A (xx) | 1969-04-22 | 1970-02-17 | |
| FR7013787A FR2039343B1 (xx) | 1969-04-22 | 1970-04-16 | |
| CH571170A CH501311A (de) | 1969-04-22 | 1970-04-17 | Stabilisiertes Halbleiterbauelement |
| AT358070A AT316652B (de) | 1969-04-22 | 1970-04-20 | Stabilisiertes Halbleiterbauelement |
| GB1892170A GB1270214A (en) | 1969-04-22 | 1970-04-21 | Improvements in or relating to stabilised semiconductor components |
| SE557370A SE366871B (xx) | 1969-04-22 | 1970-04-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691920397 DE1920397A1 (de) | 1969-04-22 | 1969-04-22 | Stabilisiertes Halbleiterbauelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1920397A1 true DE1920397A1 (de) | 1970-11-12 |
Family
ID=5731933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691920397 Pending DE1920397A1 (de) | 1969-04-22 | 1969-04-22 | Stabilisiertes Halbleiterbauelement |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT316652B (xx) |
| CH (1) | CH501311A (xx) |
| DE (1) | DE1920397A1 (xx) |
| FR (1) | FR2039343B1 (xx) |
| GB (1) | GB1270214A (xx) |
| NL (1) | NL7002197A (xx) |
| SE (1) | SE366871B (xx) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2202367A1 (xx) * | 1972-10-04 | 1974-05-03 | Hitachi Ltd |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3220250A1 (de) * | 1982-05-28 | 1983-12-01 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement mit planarstruktur |
| GB2193596A (en) * | 1986-08-08 | 1988-02-10 | Philips Electronic Associated | A semiconductor diode |
| EP0360036B1 (de) * | 1988-09-20 | 1994-06-01 | Siemens Aktiengesellschaft | Planarer pn-Übergang hoher Spannungsfestigkeit |
| CN104332499B (zh) * | 2013-07-22 | 2017-08-25 | 北大方正集团有限公司 | 一种vdmos器件及其终端结构的形成方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3343049A (en) * | 1964-06-18 | 1967-09-19 | Ibm | Semiconductor devices and passivation thereof |
-
1969
- 1969-04-22 DE DE19691920397 patent/DE1920397A1/de active Pending
-
1970
- 1970-02-17 NL NL7002197A patent/NL7002197A/xx unknown
- 1970-04-16 FR FR7013787A patent/FR2039343B1/fr not_active Expired
- 1970-04-17 CH CH571170A patent/CH501311A/de not_active IP Right Cessation
- 1970-04-20 AT AT358070A patent/AT316652B/de not_active IP Right Cessation
- 1970-04-21 GB GB1892170A patent/GB1270214A/en not_active Expired
- 1970-04-22 SE SE557370A patent/SE366871B/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2202367A1 (xx) * | 1972-10-04 | 1974-05-03 | Hitachi Ltd |
Also Published As
| Publication number | Publication date |
|---|---|
| CH501311A (de) | 1970-12-31 |
| FR2039343B1 (xx) | 1975-01-10 |
| FR2039343A1 (xx) | 1971-01-15 |
| GB1270214A (en) | 1972-04-12 |
| AT316652B (de) | 1974-07-25 |
| NL7002197A (xx) | 1970-10-26 |
| SE366871B (xx) | 1974-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE19839970C2 (de) | Randstruktur und Driftbereich für ein Halbleiterbauelement sowie Verfahren zu ihrer Herstellung | |
| DE69029271T2 (de) | Schutzvorrichtung gegen elektrostatische Entladung für einen IC-Anschluss und deren integrierte Struktur | |
| DE2047166B2 (de) | Integrierte Halbleiteranordnung | |
| DE1639254B2 (de) | Feldeffekthalbleiteranordnung mit isoliertem gatter und einem schaltungselement zur verhinderung eines durchschlags sowie verfahren zu ihrer herstellung | |
| DE2536277A1 (de) | Halbleiteranordnung | |
| DE1639052A1 (de) | MOS-Halbleiteranordnung mit Durchschlagschutz | |
| DE2911536A1 (de) | Halbleiteranordnung, verfahren zu ihrer herstellung und verwendung derselben | |
| DE1789119C3 (de) | Halbleiterbauelement. Ausscheidung aus: 1514855 | |
| CH495633A (de) | Halbleiteranordnung | |
| DE2554612A1 (de) | Integrierte halbleiterschaltung | |
| DE2621791A1 (de) | Integrierter transistor mit saettigungsverhindernder schottky- diode | |
| DE102007013848B4 (de) | Halbleiterbauelement und Verfahren zur Herstellung desselben | |
| DE2832154A1 (de) | Halbleitervorrichtung mit isoliertem gate | |
| DE1964979B2 (de) | Halbleiterbauelement mit wenigstens einem lateralen transistor und verfahren zu seiner herstellung | |
| DE1920397A1 (de) | Stabilisiertes Halbleiterbauelement | |
| DE1297762B (de) | Sperrschicht-Feldeffekttransistor | |
| DE3103785C2 (xx) | ||
| DE1539070A1 (de) | Halbleiteranordnungen mit kleinen Oberflaechenstroemen | |
| DE1644028A1 (de) | Verfahren zum Eindiffundieren von Stoerstellen in einen begrenzten Bereich eines Halbleiterkoerpers | |
| DE3542166A1 (de) | Halbleiterbauelement | |
| DE3408285A1 (de) | Schutzanordnung fuer einen feldeffekttransistor | |
| DE2361171A1 (de) | halbleitervorrichtung | |
| DE2017172C3 (de) | Halbleiteranordnung, die eine Passivierungsschicht an der Halbleiteroberfläche aufweist | |
| DE1573717B2 (de) | Druckempfindliches halbleiterbauelement | |
| DE2922926C2 (de) | Mit zwei Anschlüssen versehener, optisch zündbarer, monolithischer Zweiweg-Thyristor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHW | Rejection |