DE1916036A1 - Verfahren zum Herstellen einer Halbleiteranordnung - Google Patents

Verfahren zum Herstellen einer Halbleiteranordnung

Info

Publication number
DE1916036A1
DE1916036A1 DE19691916036 DE1916036A DE1916036A1 DE 1916036 A1 DE1916036 A1 DE 1916036A1 DE 19691916036 DE19691916036 DE 19691916036 DE 1916036 A DE1916036 A DE 1916036A DE 1916036 A1 DE1916036 A1 DE 1916036A1
Authority
DE
Germany
Prior art keywords
layer
metal layer
exposed
parts
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691916036
Other languages
German (de)
English (en)
Inventor
Levin Bernard Benjamin
Deens Henry Charles
Jones Robert Paul
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1916036A1 publication Critical patent/DE1916036A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

Landscapes

  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
DE19691916036 1968-03-28 1969-03-28 Verfahren zum Herstellen einer Halbleiteranordnung Pending DE1916036A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71682868A 1968-03-28 1968-03-28

Publications (1)

Publication Number Publication Date
DE1916036A1 true DE1916036A1 (de) 1969-10-02

Family

ID=24879613

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691916036 Pending DE1916036A1 (de) 1968-03-28 1969-03-28 Verfahren zum Herstellen einer Halbleiteranordnung

Country Status (5)

Country Link
DE (1) DE1916036A1 (https=)
ES (1) ES365276A1 (https=)
FR (1) FR1600285A (https=)
GB (1) GB1211657A (https=)
NL (1) NL6904744A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2545153A1 (de) * 1974-10-10 1976-04-22 Teletype Corp Verfahren zum freilegen eines leitenden ueberzugs auf einem substrat, insbesondere bei der herstellung integrierter schaltungen
WO2010130437A3 (de) * 2009-05-14 2011-07-14 Schott Solar Ag Verfahren zur herstellung eines photovoltaischen moduls

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3700569A (en) * 1971-09-10 1972-10-24 Bell Telephone Labor Inc Method of metallizing devices
CN113502407B (zh) * 2021-07-13 2022-04-26 湖南金天铝业高科技股份有限公司 碳化硅颗粒的预处理方法及铝基复合材料的制备方法
CN115360496B (zh) * 2022-08-30 2023-09-29 合肥工业大学 基于金属辅助化学刻蚀的太赫兹高度差腔体器件的制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2545153A1 (de) * 1974-10-10 1976-04-22 Teletype Corp Verfahren zum freilegen eines leitenden ueberzugs auf einem substrat, insbesondere bei der herstellung integrierter schaltungen
WO2010130437A3 (de) * 2009-05-14 2011-07-14 Schott Solar Ag Verfahren zur herstellung eines photovoltaischen moduls

Also Published As

Publication number Publication date
FR1600285A (https=) 1970-07-20
GB1211657A (en) 1970-11-11
NL6904744A (https=) 1969-09-30
ES365276A1 (es) 1971-02-16

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