GB1211657A - Metal etching process for semiconductor devices - Google Patents

Metal etching process for semiconductor devices

Info

Publication number
GB1211657A
GB1211657A GB02470/69A GB1247069A GB1211657A GB 1211657 A GB1211657 A GB 1211657A GB 02470/69 A GB02470/69 A GB 02470/69A GB 1247069 A GB1247069 A GB 1247069A GB 1211657 A GB1211657 A GB 1211657A
Authority
GB
United Kingdom
Prior art keywords
etching
layer
photo
resist
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB02470/69A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1211657A publication Critical patent/GB1211657A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane

Landscapes

  • Weting (AREA)
  • Drying Of Semiconductors (AREA)
GB02470/69A 1968-03-28 1969-03-10 Metal etching process for semiconductor devices Expired GB1211657A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71682868A 1968-03-28 1968-03-28

Publications (1)

Publication Number Publication Date
GB1211657A true GB1211657A (en) 1970-11-11

Family

ID=24879613

Family Applications (1)

Application Number Title Priority Date Filing Date
GB02470/69A Expired GB1211657A (en) 1968-03-28 1969-03-10 Metal etching process for semiconductor devices

Country Status (5)

Country Link
DE (1) DE1916036A1 (https=)
ES (1) ES365276A1 (https=)
FR (1) FR1600285A (https=)
GB (1) GB1211657A (https=)
NL (1) NL6904744A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2243682A1 (de) * 1971-09-10 1973-03-15 Western Electric Co Verfahren zur metallisierung von bauteilen
CN113502407A (zh) * 2021-07-13 2021-10-15 湖南金天铝业高科技股份有限公司 碳化硅颗粒的预处理方法及铝基复合材料的制备方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3920471A (en) * 1974-10-10 1975-11-18 Teletype Corp Prevention of aluminum etching during silox photoshaping
DE102009021272A1 (de) * 2009-05-14 2010-11-18 Schott Solar Ag Verfahren zur Herstellung eines photovoltaischen Moduls
CN115360496B (zh) * 2022-08-30 2023-09-29 合肥工业大学 基于金属辅助化学刻蚀的太赫兹高度差腔体器件的制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2243682A1 (de) * 1971-09-10 1973-03-15 Western Electric Co Verfahren zur metallisierung von bauteilen
CN113502407A (zh) * 2021-07-13 2021-10-15 湖南金天铝业高科技股份有限公司 碳化硅颗粒的预处理方法及铝基复合材料的制备方法

Also Published As

Publication number Publication date
FR1600285A (https=) 1970-07-20
DE1916036A1 (de) 1969-10-02
NL6904744A (https=) 1969-09-30
ES365276A1 (es) 1971-02-16

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees