DE1910736C3 - Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens - Google Patents

Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens

Info

Publication number
DE1910736C3
DE1910736C3 DE1910736A DE1910736A DE1910736C3 DE 1910736 C3 DE1910736 C3 DE 1910736C3 DE 1910736 A DE1910736 A DE 1910736A DE 1910736 A DE1910736 A DE 1910736A DE 1910736 C3 DE1910736 C3 DE 1910736C3
Authority
DE
Germany
Prior art keywords
aluminum
layer
aluminum oxide
production
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1910736A
Other languages
German (de)
English (en)
Other versions
DE1910736A1 (de
DE1910736B2 (de
Inventor
Hans Grafe
Hans Dipl.- Phys. Dr. Ullrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE1910736A priority Critical patent/DE1910736C3/de
Priority to NL6916904A priority patent/NL6916904A/xx
Priority to US00006357A priority patent/US3759798A/en
Priority to CA073420A priority patent/CA918301A/en
Priority to CH287870A priority patent/CH503373A/de
Priority to FR7007352A priority patent/FR2034611B1/fr
Priority to AT191070A priority patent/AT297828B/de
Priority to GB9856/70A priority patent/GB1253645A/en
Priority to SE02816/70A priority patent/SE363427B/xx
Publication of DE1910736A1 publication Critical patent/DE1910736A1/de
Publication of DE1910736B2 publication Critical patent/DE1910736B2/de
Application granted granted Critical
Publication of DE1910736C3 publication Critical patent/DE1910736C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6329—Deposition from the gas or vapour phase using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electronic Switches (AREA)
DE1910736A 1969-03-03 1969-03-03 Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens Expired DE1910736C3 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE1910736A DE1910736C3 (de) 1969-03-03 1969-03-03 Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens
NL6916904A NL6916904A (https=) 1969-03-03 1969-11-10
US00006357A US3759798A (en) 1969-03-03 1970-01-28 Method of producing electrically insulated aluminum contacts
CA073420A CA918301A (en) 1969-03-03 1970-01-29 Production of electrically insulated contacts
CH287870A CH503373A (de) 1969-03-03 1970-02-27 Verfahren zum Herstellen von elektrisch isolierten, aus Aluminium bestehenden Anschlüssen oder Verbindungen
FR7007352A FR2034611B1 (https=) 1969-03-03 1970-03-02
AT191070A AT297828B (de) 1969-03-03 1970-03-02 Verfahren zum Herstellen von elektrisch isolierten, aus Aluminium bestehenden Kontaktschichten
GB9856/70A GB1253645A (en) 1969-03-03 1970-03-02 Improvements in or relating to the production of electrically insulated contacts
SE02816/70A SE363427B (https=) 1969-03-03 1970-03-03

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE1910736A DE1910736C3 (de) 1969-03-03 1969-03-03 Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens
US635770A 1970-01-28 1970-01-28

Publications (3)

Publication Number Publication Date
DE1910736A1 DE1910736A1 (de) 1970-09-10
DE1910736B2 DE1910736B2 (de) 1977-09-01
DE1910736C3 true DE1910736C3 (de) 1978-05-11

Family

ID=25757078

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1910736A Expired DE1910736C3 (de) 1969-03-03 1969-03-03 Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens

Country Status (7)

Country Link
US (1) US3759798A (https=)
AT (1) AT297828B (https=)
CH (1) CH503373A (https=)
DE (1) DE1910736C3 (https=)
FR (1) FR2034611B1 (https=)
GB (1) GB1253645A (https=)
NL (1) NL6916904A (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3863332A (en) * 1973-06-28 1975-02-04 Hughes Aircraft Co Method of fabricating back panel for liquid crystal display
JPS5722885B2 (https=) * 1974-02-18 1982-05-15
US3894919A (en) * 1974-05-09 1975-07-15 Bell Telephone Labor Inc Contacting semiconductors during electrolytic oxidation
FR2285716A1 (fr) * 1974-09-18 1976-04-16 Radiotechnique Compelec Procede pour la fabrication d'un dispositif semi-conducteur comportant une configuration de conducteurs et dispositif fabrique par ce procede
US3986897A (en) * 1974-09-30 1976-10-19 Motorola, Inc. Aluminum treatment to prevent hillocking
DE2539193C3 (de) * 1975-09-03 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines planeren Leiterbahnsystems für integrierte Halbleiterschaltungen
DE2555187A1 (de) * 1975-12-08 1977-06-16 Siemens Ag Verfahren zum herstellen einer halbleitervorrichtung
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
US4394678A (en) * 1979-09-19 1983-07-19 Motorola, Inc. Elevated edge-protected bonding pedestals for semiconductor devices
DE3616185A1 (de) * 1986-05-14 1987-11-19 Semikron Elektronik Gmbh Halbleiterbauelement
DE3616233A1 (de) * 1986-05-14 1987-11-19 Semikron Elektronik Gmbh Halbleiterbauelement
US4839715A (en) * 1987-08-20 1989-06-13 International Business Machines Corporation Chip contacts without oxide discontinuities
US5665644A (en) * 1995-11-03 1997-09-09 Micron Technology, Inc. Semiconductor processing method of forming electrically conductive interconnect lines and integrated circuitry
US6091150A (en) * 1996-09-03 2000-07-18 Micron Technology, Inc. Integrated circuitry comprising electrically insulative material over interconnect line tops, sidewalls and bottoms

Also Published As

Publication number Publication date
CH503373A (de) 1971-02-15
DE1910736A1 (de) 1970-09-10
DE1910736B2 (de) 1977-09-01
US3759798A (en) 1973-09-18
GB1253645A (en) 1971-11-17
FR2034611A1 (https=) 1970-12-11
FR2034611B1 (https=) 1975-01-10
AT297828B (de) 1972-04-10
NL6916904A (https=) 1970-09-07

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
EF Willingness to grant licences