AT297828B - Verfahren zum Herstellen von elektrisch isolierten, aus Aluminium bestehenden Kontaktschichten - Google Patents

Verfahren zum Herstellen von elektrisch isolierten, aus Aluminium bestehenden Kontaktschichten

Info

Publication number
AT297828B
AT297828B AT191070A AT191070A AT297828B AT 297828 B AT297828 B AT 297828B AT 191070 A AT191070 A AT 191070A AT 191070 A AT191070 A AT 191070A AT 297828 B AT297828 B AT 297828B
Authority
AT
Austria
Prior art keywords
aluminum
production
electrically insulated
layers made
contact layers
Prior art date
Application number
AT191070A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT297828B publication Critical patent/AT297828B/de

Links

Classifications

    • H10P14/6314—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H10P14/6329—
    • H10P14/662—
    • H10P14/69433—
    • H10P95/00—
    • H10W20/40—
    • H10W74/40—
    • H10P14/6322—
    • H10P14/6324—
    • H10P14/6686—
    • H10P14/69215—
    • H10P14/69391—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electronic Switches (AREA)
AT191070A 1969-03-03 1970-03-02 Verfahren zum Herstellen von elektrisch isolierten, aus Aluminium bestehenden Kontaktschichten AT297828B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE1910736A DE1910736C3 (de) 1969-03-03 1969-03-03 Verfahren zum Herstellen von gegeneinander elektrisch isolierten, aus Aluminium bestehenden Leiterbahnen und Anwendung des Verfahrens
US635770A 1970-01-28 1970-01-28

Publications (1)

Publication Number Publication Date
AT297828B true AT297828B (de) 1972-04-10

Family

ID=25757078

Family Applications (1)

Application Number Title Priority Date Filing Date
AT191070A AT297828B (de) 1969-03-03 1970-03-02 Verfahren zum Herstellen von elektrisch isolierten, aus Aluminium bestehenden Kontaktschichten

Country Status (7)

Country Link
US (1) US3759798A (de)
AT (1) AT297828B (de)
CH (1) CH503373A (de)
DE (1) DE1910736C3 (de)
FR (1) FR2034611B1 (de)
GB (1) GB1253645A (de)
NL (1) NL6916904A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0303812A1 (de) * 1987-08-20 1989-02-22 International Business Machines Corporation Chip-Kontakte ohne Oxid-Unstetigkeiten

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3863332A (en) * 1973-06-28 1975-02-04 Hughes Aircraft Co Method of fabricating back panel for liquid crystal display
JPS5722885B2 (de) * 1974-02-18 1982-05-15
US3894919A (en) * 1974-05-09 1975-07-15 Bell Telephone Labor Inc Contacting semiconductors during electrolytic oxidation
FR2285716A1 (fr) * 1974-09-18 1976-04-16 Radiotechnique Compelec Procede pour la fabrication d'un dispositif semi-conducteur comportant une configuration de conducteurs et dispositif fabrique par ce procede
US3986897A (en) * 1974-09-30 1976-10-19 Motorola, Inc. Aluminum treatment to prevent hillocking
DE2539193C3 (de) * 1975-09-03 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines planeren Leiterbahnsystems für integrierte Halbleiterschaltungen
DE2555187A1 (de) * 1975-12-08 1977-06-16 Siemens Ag Verfahren zum herstellen einer halbleitervorrichtung
US4433004A (en) * 1979-07-11 1984-02-21 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device and a method for manufacturing the same
US4394678A (en) * 1979-09-19 1983-07-19 Motorola, Inc. Elevated edge-protected bonding pedestals for semiconductor devices
DE3616233A1 (de) * 1986-05-14 1987-11-19 Semikron Elektronik Gmbh Halbleiterbauelement
DE3616185A1 (de) * 1986-05-14 1987-11-19 Semikron Elektronik Gmbh Halbleiterbauelement
US5665644A (en) * 1995-11-03 1997-09-09 Micron Technology, Inc. Semiconductor processing method of forming electrically conductive interconnect lines and integrated circuitry
US6091150A (en) * 1996-09-03 2000-07-18 Micron Technology, Inc. Integrated circuitry comprising electrically insulative material over interconnect line tops, sidewalls and bottoms

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0303812A1 (de) * 1987-08-20 1989-02-22 International Business Machines Corporation Chip-Kontakte ohne Oxid-Unstetigkeiten

Also Published As

Publication number Publication date
DE1910736C3 (de) 1978-05-11
DE1910736A1 (de) 1970-09-10
GB1253645A (en) 1971-11-17
FR2034611B1 (de) 1975-01-10
CH503373A (de) 1971-02-15
US3759798A (en) 1973-09-18
NL6916904A (de) 1970-09-07
FR2034611A1 (de) 1970-12-11
DE1910736B2 (de) 1977-09-01

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee