DE1811277C3 - Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht - Google Patents
Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-SchichtInfo
- Publication number
- DE1811277C3 DE1811277C3 DE1811277A DE1811277A DE1811277C3 DE 1811277 C3 DE1811277 C3 DE 1811277C3 DE 1811277 A DE1811277 A DE 1811277A DE 1811277 A DE1811277 A DE 1811277A DE 1811277 C3 DE1811277 C3 DE 1811277C3
- Authority
- DE
- Germany
- Prior art keywords
- layer
- boron oxide
- silicon layer
- glass layer
- doped zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052710 silicon Inorganic materials 0.000 title claims description 14
- 239000010703 silicon Substances 0.000 title claims description 14
- 230000035515 penetration Effects 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052810 boron oxide Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 239000000075 oxide glass Substances 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 239000012298 atmosphere Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 238000005496 tempering Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000000197 pyrolysis Methods 0.000 claims 1
- 150000004756 silanes Chemical class 0.000 claims 1
- 230000005669 field effect Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 239000006163 transport media Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1811277A DE1811277C3 (de) | 1968-11-27 | 1968-11-27 | Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht |
| NL6914784A NL6914784A (enrdf_load_stackoverflow) | 1968-11-27 | 1969-09-30 | |
| AT1099969A AT320030B (de) | 1968-11-27 | 1969-11-25 | Verfahren zum Herstellen von Feldeffekttransistoren mit p-dotierten Zonen mit unterschiedlichen Eindringtiefen in Silizium |
| GB1232727D GB1232727A (enrdf_load_stackoverflow) | 1968-11-27 | 1969-11-26 | |
| FR6940726A FR2024352B1 (enrdf_load_stackoverflow) | 1968-11-27 | 1969-11-26 | |
| JP44094361A JPS4826662B1 (enrdf_load_stackoverflow) | 1968-11-27 | 1969-11-26 | |
| CH1762069A CH508275A (de) | 1968-11-27 | 1969-11-26 | Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einem Siliciumhalbleiterkörper |
| SE16362/69A SE344385B (enrdf_load_stackoverflow) | 1968-11-27 | 1969-11-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1811277A DE1811277C3 (de) | 1968-11-27 | 1968-11-27 | Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1811277A1 DE1811277A1 (de) | 1970-06-18 |
| DE1811277B2 DE1811277B2 (de) | 1977-09-08 |
| DE1811277C3 true DE1811277C3 (de) | 1978-06-08 |
Family
ID=5714504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1811277A Expired DE1811277C3 (de) | 1968-11-27 | 1968-11-27 | Verfahren zum Herstellen von p-dotierten Zonen mit unterschiedlichen Eindringtiefen in einer n-Silicium-Schicht |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4826662B1 (enrdf_load_stackoverflow) |
| AT (1) | AT320030B (enrdf_load_stackoverflow) |
| CH (1) | CH508275A (enrdf_load_stackoverflow) |
| DE (1) | DE1811277C3 (enrdf_load_stackoverflow) |
| FR (1) | FR2024352B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1232727A (enrdf_load_stackoverflow) |
| NL (1) | NL6914784A (enrdf_load_stackoverflow) |
| SE (1) | SE344385B (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2092730A1 (en) * | 1970-06-12 | 1972-01-28 | Radiotechnique Compelec | Boron diffusion in silicon - from diborane, oxygen nitrogen mixtures |
| JPS51127564U (enrdf_load_stackoverflow) * | 1975-04-09 | 1976-10-15 | ||
| US4099997A (en) * | 1976-06-21 | 1978-07-11 | Rca Corporation | Method of fabricating a semiconductor device |
| NL8006668A (nl) * | 1980-12-09 | 1982-07-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| DE102009041546A1 (de) * | 2009-03-27 | 2010-10-14 | Bosch Solar Energy Ag | Verfahren zur Herstellung von Solarzellen mit selektivem Emitter |
-
1968
- 1968-11-27 DE DE1811277A patent/DE1811277C3/de not_active Expired
-
1969
- 1969-09-30 NL NL6914784A patent/NL6914784A/xx unknown
- 1969-11-25 AT AT1099969A patent/AT320030B/de not_active IP Right Cessation
- 1969-11-26 FR FR6940726A patent/FR2024352B1/fr not_active Expired
- 1969-11-26 JP JP44094361A patent/JPS4826662B1/ja active Pending
- 1969-11-26 GB GB1232727D patent/GB1232727A/en not_active Expired
- 1969-11-26 CH CH1762069A patent/CH508275A/de not_active IP Right Cessation
- 1969-11-27 SE SE16362/69A patent/SE344385B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1811277B2 (de) | 1977-09-08 |
| JPS4826662B1 (enrdf_load_stackoverflow) | 1973-08-14 |
| CH508275A (de) | 1971-05-31 |
| SE344385B (enrdf_load_stackoverflow) | 1972-04-10 |
| DE1811277A1 (de) | 1970-06-18 |
| GB1232727A (enrdf_load_stackoverflow) | 1971-05-19 |
| FR2024352A1 (enrdf_load_stackoverflow) | 1970-08-28 |
| NL6914784A (enrdf_load_stackoverflow) | 1970-05-29 |
| AT320030B (de) | 1975-01-27 |
| FR2024352B1 (enrdf_load_stackoverflow) | 1974-05-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |