DE1808342A1 - Verfahren zum Herstellen eines Halbleiterbauelementes - Google Patents
Verfahren zum Herstellen eines HalbleiterbauelementesInfo
- Publication number
- DE1808342A1 DE1808342A1 DE19681808342 DE1808342A DE1808342A1 DE 1808342 A1 DE1808342 A1 DE 1808342A1 DE 19681808342 DE19681808342 DE 19681808342 DE 1808342 A DE1808342 A DE 1808342A DE 1808342 A1 DE1808342 A1 DE 1808342A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- layer
- collector
- metal
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 239000004065 semiconductor Substances 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 21
- 229910052697 platinum Inorganic materials 0.000 claims description 21
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910021339 platinum silicide Inorganic materials 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910021360 copper silicide Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 73
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 28
- 239000000377 silicon dioxide Substances 0.000 description 14
- 235000012239 silicon dioxide Nutrition 0.000 description 13
- 238000003860 storage Methods 0.000 description 7
- 230000002787 reinforcement Effects 0.000 description 6
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68323867A | 1967-11-15 | 1967-11-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1808342A1 true DE1808342A1 (de) | 1970-04-09 |
| DE1808342B2 DE1808342B2 (enrdf_load_stackoverflow) | 1970-09-10 |
Family
ID=24743141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681808342 Ceased DE1808342A1 (de) | 1967-11-15 | 1968-11-12 | Verfahren zum Herstellen eines Halbleiterbauelementes |
Country Status (9)
| Country | Link |
|---|---|
| AT (1) | AT302417B (enrdf_load_stackoverflow) |
| BE (1) | BE723876A (enrdf_load_stackoverflow) |
| CH (1) | CH479163A (enrdf_load_stackoverflow) |
| DE (1) | DE1808342A1 (enrdf_load_stackoverflow) |
| ES (1) | ES360641A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1591489A (enrdf_load_stackoverflow) |
| GB (1) | GB1252565A (enrdf_load_stackoverflow) |
| NL (1) | NL6816152A (enrdf_load_stackoverflow) |
| SE (1) | SE341222B (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3614560A (en) * | 1969-12-30 | 1971-10-19 | Ibm | Improved surface barrier transistor |
| CA965189A (en) * | 1972-01-03 | 1975-03-25 | Signetics Corporation | Semiconductor structure using platinel silicide as a schottky barrier diode and method |
| US4035831A (en) * | 1975-04-17 | 1977-07-12 | Agency Of Industrial Science & Technology | Radial emitter pressure contact type semiconductor devices |
| US4233337A (en) * | 1978-05-01 | 1980-11-11 | International Business Machines Corporation | Method for forming semiconductor contacts |
-
1968
- 1968-11-12 DE DE19681808342 patent/DE1808342A1/de not_active Ceased
- 1968-11-12 SE SE15324/68A patent/SE341222B/xx unknown
- 1968-11-13 AT AT1104668A patent/AT302417B/de not_active IP Right Cessation
- 1968-11-13 FR FR1591489D patent/FR1591489A/fr not_active Expired
- 1968-11-13 ES ES360641A patent/ES360641A1/es not_active Expired
- 1968-11-13 NL NL6816152A patent/NL6816152A/xx unknown
- 1968-11-14 GB GB1252565D patent/GB1252565A/en not_active Expired
- 1968-11-14 BE BE723876D patent/BE723876A/xx not_active IP Right Cessation
- 1968-11-15 CH CH1709368A patent/CH479163A/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB1252565A (enrdf_load_stackoverflow) | 1971-11-10 |
| BE723876A (enrdf_load_stackoverflow) | 1969-04-16 |
| DE1808342B2 (enrdf_load_stackoverflow) | 1970-09-10 |
| AT302417B (de) | 1972-10-10 |
| CH479163A (de) | 1969-09-30 |
| NL6816152A (enrdf_load_stackoverflow) | 1969-05-19 |
| ES360641A1 (es) | 1970-07-16 |
| FR1591489A (enrdf_load_stackoverflow) | 1970-04-27 |
| SE341222B (enrdf_load_stackoverflow) | 1971-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE4013643A1 (de) | Bipolartransistor mit isolierter steuerelektrode und verfahren zu seiner herstellung | |
| DE2757762C2 (de) | Monolithische Kombination zweier komplementärer Bipolartransistoren | |
| DE1932590A1 (de) | Monolithische Schaltung mit eingegliederten Schalttransistoren und stark nichtlineare Widerstandscharakteristiken aufweisenden Schottkydioden und Verfahren zu ihrer Herstellung | |
| DE3027599C2 (enrdf_load_stackoverflow) | ||
| DE1489894B2 (de) | In zwei richtungen schaltbares halbleiterbauelement | |
| DE1903870A1 (de) | Verfahren zum Herstellen monolithischer Halbleiteranordnungen | |
| DE1489038A1 (de) | Unipolartransistor | |
| DE2054863A1 (de) | Spannungsverstärker | |
| DE2657293A1 (de) | Transistorschaltung | |
| DE1808342A1 (de) | Verfahren zum Herstellen eines Halbleiterbauelementes | |
| DE2800363C2 (de) | Halbleiteranordnung und Verfahren zu deren Herstellung | |
| DE2247911C2 (de) | Monolithisch integrierte Schaltungsanordnung | |
| DE3622141C2 (de) | Treiberelement für induktive Lasten | |
| DE3005367C2 (enrdf_load_stackoverflow) | ||
| DE2531164A1 (de) | Transistorvorrichtung | |
| DE2627922A1 (de) | Halbleiterbauteil | |
| DE2429036A1 (de) | Feldeffekt-flaechentransistor fuer schaltvorgaenge im mikrowellenbereich | |
| DE2731443C2 (enrdf_load_stackoverflow) | ||
| DE2456635C3 (de) | Integrierte Halbleiterschaltung mit negativem Widerstand | |
| DE1207010B (de) | Flaechentransistor mit einem Halbleiterkoerper mit vier Zonen abwechselnd entgegengesetzten Leitungstyps, Verfahren zum Herstellen und Schaltung solcher Flaechentransistoren | |
| DE2128934C3 (de) | Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE2410721A1 (de) | Steuerbares halbleiter-gleichrichterelement | |
| DE2718644C2 (de) | Monolithisch' integrierte Halbleiterdiodenanordnung und deren Verwendung als Gehörschutzgleichrichter | |
| DE2820913C2 (enrdf_load_stackoverflow) | ||
| DE2854995C2 (de) | Integrierte Darlington-Schaltungsanordnung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BHV | Refusal |