ES360641A1 - Procedimiento para la fabricacion de un dispositivo semi- conductor. - Google Patents
Procedimiento para la fabricacion de un dispositivo semi- conductor.Info
- Publication number
- ES360641A1 ES360641A1 ES360641A ES360641A ES360641A1 ES 360641 A1 ES360641 A1 ES 360641A1 ES 360641 A ES360641 A ES 360641A ES 360641 A ES360641 A ES 360641A ES 360641 A1 ES360641 A1 ES 360641A1
- Authority
- ES
- Spain
- Prior art keywords
- platinum
- silicide
- collector
- schottky barrier
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 8
- 229910052697 platinum Inorganic materials 0.000 abstract 4
- 230000004888 barrier function Effects 0.000 abstract 3
- 238000000151 deposition Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910021332 silicide Inorganic materials 0.000 abstract 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910021360 copper silicide Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910021339 platinum silicide Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68323867A | 1967-11-15 | 1967-11-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES360641A1 true ES360641A1 (es) | 1970-07-16 |
Family
ID=24743141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES360641A Expired ES360641A1 (es) | 1967-11-15 | 1968-11-13 | Procedimiento para la fabricacion de un dispositivo semi- conductor. |
Country Status (9)
| Country | Link |
|---|---|
| AT (1) | AT302417B (enrdf_load_stackoverflow) |
| BE (1) | BE723876A (enrdf_load_stackoverflow) |
| CH (1) | CH479163A (enrdf_load_stackoverflow) |
| DE (1) | DE1808342A1 (enrdf_load_stackoverflow) |
| ES (1) | ES360641A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1591489A (enrdf_load_stackoverflow) |
| GB (1) | GB1252565A (enrdf_load_stackoverflow) |
| NL (1) | NL6816152A (enrdf_load_stackoverflow) |
| SE (1) | SE341222B (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3614560A (en) * | 1969-12-30 | 1971-10-19 | Ibm | Improved surface barrier transistor |
| CA965189A (en) * | 1972-01-03 | 1975-03-25 | Signetics Corporation | Semiconductor structure using platinel silicide as a schottky barrier diode and method |
| US4035831A (en) * | 1975-04-17 | 1977-07-12 | Agency Of Industrial Science & Technology | Radial emitter pressure contact type semiconductor devices |
| US4233337A (en) * | 1978-05-01 | 1980-11-11 | International Business Machines Corporation | Method for forming semiconductor contacts |
-
1968
- 1968-11-12 DE DE19681808342 patent/DE1808342A1/de not_active Ceased
- 1968-11-12 SE SE15324/68A patent/SE341222B/xx unknown
- 1968-11-13 AT AT1104668A patent/AT302417B/de not_active IP Right Cessation
- 1968-11-13 FR FR1591489D patent/FR1591489A/fr not_active Expired
- 1968-11-13 ES ES360641A patent/ES360641A1/es not_active Expired
- 1968-11-13 NL NL6816152A patent/NL6816152A/xx unknown
- 1968-11-14 GB GB1252565D patent/GB1252565A/en not_active Expired
- 1968-11-14 BE BE723876D patent/BE723876A/xx not_active IP Right Cessation
- 1968-11-15 CH CH1709368A patent/CH479163A/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| GB1252565A (enrdf_load_stackoverflow) | 1971-11-10 |
| BE723876A (enrdf_load_stackoverflow) | 1969-04-16 |
| DE1808342B2 (enrdf_load_stackoverflow) | 1970-09-10 |
| DE1808342A1 (de) | 1970-04-09 |
| AT302417B (de) | 1972-10-10 |
| CH479163A (de) | 1969-09-30 |
| NL6816152A (enrdf_load_stackoverflow) | 1969-05-19 |
| FR1591489A (enrdf_load_stackoverflow) | 1970-04-27 |
| SE341222B (enrdf_load_stackoverflow) | 1971-12-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB921264A (en) | Improvements in and relating to semiconductor devices | |
| GB953917A (en) | Improvements relating to semiconductor circuits | |
| GB908690A (en) | Semiconductor device | |
| GB1154891A (en) | Semiconductor Devices and Methods of Manufacture | |
| GB1000058A (en) | Improvements in or relating to semiconductor devices | |
| ES360641A1 (es) | Procedimiento para la fabricacion de un dispositivo semi- conductor. | |
| ES351788A1 (es) | Un dispositivo semiconductor. | |
| GB1103184A (en) | Improvements relating to semiconductor circuits | |
| GB1160381A (en) | Improvements relating to Semiconductors and Methods of making Semiconductors. | |
| GB1020097A (en) | Semiconductor switching device and method of manufacture | |
| GB1057817A (en) | Semiconductor diodes and methods of making them | |
| SE329414B (enrdf_load_stackoverflow) | ||
| GB1337906A (en) | Integrated semiconductor structure | |
| GB1270498A (en) | Semiconductor devices | |
| GB1262787A (en) | Improvements in or relating to semiconductor arrangements | |
| GB989205A (en) | Improvements in or relating to semi-conductor structures | |
| ES357987A1 (es) | Un dispositivo semiconductor. | |
| GB1048424A (en) | Improvements in or relating to semiconductor devices | |
| ES280027A1 (es) | Dispositivo semiconductor | |
| GB989118A (en) | Semiconductor circuit elements | |
| GB800221A (en) | Improvements in or relating to semi-conductor devices | |
| GB1188864A (en) | Method for the Manufacturing of a Solid State Circuit Adaptable as H.F. Tuner. | |
| FR1324666A (fr) | Formation d'un dispositif semi-conducteur | |
| GB1172109A (en) | Improvements relating to Semiconductor Devices | |
| GB1029767A (en) | Improvements in or relating to the manufacture of electrical circuit elements |