CH479163A - Verfahren zum Herstellen eines Halbleiterbauelementes - Google Patents
Verfahren zum Herstellen eines HalbleiterbauelementesInfo
- Publication number
- CH479163A CH479163A CH1709368A CH1709368A CH479163A CH 479163 A CH479163 A CH 479163A CH 1709368 A CH1709368 A CH 1709368A CH 1709368 A CH1709368 A CH 1709368A CH 479163 A CH479163 A CH 479163A
- Authority
- CH
- Switzerland
- Prior art keywords
- manufacturing
- semiconductor component
- semiconductor
- component
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68323867A | 1967-11-15 | 1967-11-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH479163A true CH479163A (de) | 1969-09-30 |
Family
ID=24743141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1709368A CH479163A (de) | 1967-11-15 | 1968-11-15 | Verfahren zum Herstellen eines Halbleiterbauelementes |
Country Status (9)
Country | Link |
---|---|
AT (1) | AT302417B (enrdf_load_stackoverflow) |
BE (1) | BE723876A (enrdf_load_stackoverflow) |
CH (1) | CH479163A (enrdf_load_stackoverflow) |
DE (1) | DE1808342A1 (enrdf_load_stackoverflow) |
ES (1) | ES360641A1 (enrdf_load_stackoverflow) |
FR (1) | FR1591489A (enrdf_load_stackoverflow) |
GB (1) | GB1252565A (enrdf_load_stackoverflow) |
NL (1) | NL6816152A (enrdf_load_stackoverflow) |
SE (1) | SE341222B (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2064084A1 (de) * | 1969-12-30 | 1971-07-08 | Ibm | Transistor mit Schottky-Sperrschicht |
DE2601131A1 (de) * | 1975-04-17 | 1976-10-28 | Agency Ind Science Techn | Halbleitereinrichtungen vom druckkontakt-typ |
EP0005185A1 (de) * | 1978-05-01 | 1979-11-14 | International Business Machines Corporation | Verfahren zum gleichzeitigen Herstellen von Schottky-Sperrschichtdioden und ohmschen Kontakten nach dotierten Halbleiterzonen |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA965189A (en) * | 1972-01-03 | 1975-03-25 | Signetics Corporation | Semiconductor structure using platinel silicide as a schottky barrier diode and method |
-
1968
- 1968-11-12 DE DE19681808342 patent/DE1808342A1/de not_active Ceased
- 1968-11-12 SE SE15324/68A patent/SE341222B/xx unknown
- 1968-11-13 AT AT1104668A patent/AT302417B/de not_active IP Right Cessation
- 1968-11-13 FR FR1591489D patent/FR1591489A/fr not_active Expired
- 1968-11-13 NL NL6816152A patent/NL6816152A/xx unknown
- 1968-11-13 ES ES360641A patent/ES360641A1/es not_active Expired
- 1968-11-14 BE BE723876D patent/BE723876A/xx not_active IP Right Cessation
- 1968-11-14 GB GB1252565D patent/GB1252565A/en not_active Expired
- 1968-11-15 CH CH1709368A patent/CH479163A/de not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2064084A1 (de) * | 1969-12-30 | 1971-07-08 | Ibm | Transistor mit Schottky-Sperrschicht |
FR2072116A1 (enrdf_load_stackoverflow) * | 1969-12-30 | 1971-09-24 | Ibm | |
DE2601131A1 (de) * | 1975-04-17 | 1976-10-28 | Agency Ind Science Techn | Halbleitereinrichtungen vom druckkontakt-typ |
EP0005185A1 (de) * | 1978-05-01 | 1979-11-14 | International Business Machines Corporation | Verfahren zum gleichzeitigen Herstellen von Schottky-Sperrschichtdioden und ohmschen Kontakten nach dotierten Halbleiterzonen |
Also Published As
Publication number | Publication date |
---|---|
DE1808342B2 (enrdf_load_stackoverflow) | 1970-09-10 |
GB1252565A (enrdf_load_stackoverflow) | 1971-11-10 |
AT302417B (de) | 1972-10-10 |
DE1808342A1 (de) | 1970-04-09 |
ES360641A1 (es) | 1970-07-16 |
BE723876A (enrdf_load_stackoverflow) | 1969-04-16 |
FR1591489A (enrdf_load_stackoverflow) | 1970-04-27 |
NL6816152A (enrdf_load_stackoverflow) | 1969-05-19 |
SE341222B (enrdf_load_stackoverflow) | 1971-12-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |