CH479163A - Verfahren zum Herstellen eines Halbleiterbauelementes - Google Patents

Verfahren zum Herstellen eines Halbleiterbauelementes

Info

Publication number
CH479163A
CH479163A CH1709368A CH1709368A CH479163A CH 479163 A CH479163 A CH 479163A CH 1709368 A CH1709368 A CH 1709368A CH 1709368 A CH1709368 A CH 1709368A CH 479163 A CH479163 A CH 479163A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor component
semiconductor
component
Prior art date
Application number
CH1709368A
Other languages
German (de)
English (en)
Inventor
Richard Chenette Eugene
Edwards Roger
Alan Pedersen Richard
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH479163A publication Critical patent/CH479163A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617Combinations of vertical BJTs and only diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CH1709368A 1967-11-15 1968-11-15 Verfahren zum Herstellen eines Halbleiterbauelementes CH479163A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68323867A 1967-11-15 1967-11-15

Publications (1)

Publication Number Publication Date
CH479163A true CH479163A (de) 1969-09-30

Family

ID=24743141

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1709368A CH479163A (de) 1967-11-15 1968-11-15 Verfahren zum Herstellen eines Halbleiterbauelementes

Country Status (9)

Country Link
AT (1) AT302417B (enrdf_load_stackoverflow)
BE (1) BE723876A (enrdf_load_stackoverflow)
CH (1) CH479163A (enrdf_load_stackoverflow)
DE (1) DE1808342A1 (enrdf_load_stackoverflow)
ES (1) ES360641A1 (enrdf_load_stackoverflow)
FR (1) FR1591489A (enrdf_load_stackoverflow)
GB (1) GB1252565A (enrdf_load_stackoverflow)
NL (1) NL6816152A (enrdf_load_stackoverflow)
SE (1) SE341222B (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2064084A1 (de) * 1969-12-30 1971-07-08 Ibm Transistor mit Schottky-Sperrschicht
DE2601131A1 (de) * 1975-04-17 1976-10-28 Agency Ind Science Techn Halbleitereinrichtungen vom druckkontakt-typ
EP0005185A1 (de) * 1978-05-01 1979-11-14 International Business Machines Corporation Verfahren zum gleichzeitigen Herstellen von Schottky-Sperrschichtdioden und ohmschen Kontakten nach dotierten Halbleiterzonen

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA965189A (en) * 1972-01-03 1975-03-25 Signetics Corporation Semiconductor structure using platinel silicide as a schottky barrier diode and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2064084A1 (de) * 1969-12-30 1971-07-08 Ibm Transistor mit Schottky-Sperrschicht
FR2072116A1 (enrdf_load_stackoverflow) * 1969-12-30 1971-09-24 Ibm
DE2601131A1 (de) * 1975-04-17 1976-10-28 Agency Ind Science Techn Halbleitereinrichtungen vom druckkontakt-typ
EP0005185A1 (de) * 1978-05-01 1979-11-14 International Business Machines Corporation Verfahren zum gleichzeitigen Herstellen von Schottky-Sperrschichtdioden und ohmschen Kontakten nach dotierten Halbleiterzonen

Also Published As

Publication number Publication date
DE1808342B2 (enrdf_load_stackoverflow) 1970-09-10
GB1252565A (enrdf_load_stackoverflow) 1971-11-10
AT302417B (de) 1972-10-10
DE1808342A1 (de) 1970-04-09
ES360641A1 (es) 1970-07-16
BE723876A (enrdf_load_stackoverflow) 1969-04-16
FR1591489A (enrdf_load_stackoverflow) 1970-04-27
NL6816152A (enrdf_load_stackoverflow) 1969-05-19
SE341222B (enrdf_load_stackoverflow) 1971-12-20

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Legal Events

Date Code Title Description
PL Patent ceased