DE1804462A1 - Verfahren zum Herstellen epitaktischer Schichten halbleitender Verbindungen - Google Patents

Verfahren zum Herstellen epitaktischer Schichten halbleitender Verbindungen

Info

Publication number
DE1804462A1
DE1804462A1 DE19681804462 DE1804462A DE1804462A1 DE 1804462 A1 DE1804462 A1 DE 1804462A1 DE 19681804462 DE19681804462 DE 19681804462 DE 1804462 A DE1804462 A DE 1804462A DE 1804462 A1 DE1804462 A1 DE 1804462A1
Authority
DE
Germany
Prior art keywords
compounds
source
gallium arsenide
transport reaction
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681804462
Other languages
German (de)
English (en)
Inventor
Dipl-Chem Dr Erhard Sirtl
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19681804462 priority Critical patent/DE1804462A1/de
Priority to NL6913797A priority patent/NL6913797A/xx
Priority to CA062952A priority patent/CA937495A/en
Priority to AT988369A priority patent/AT323235B/de
Priority to CH1562369A priority patent/CH499880A/de
Priority to GB51522/69A priority patent/GB1273188A/en
Priority to FR6936014A priority patent/FR2021226B1/fr
Priority to JP44083914A priority patent/JPS497992B1/ja
Priority to SE14487/69A priority patent/SE360278B/xx
Publication of DE1804462A1 publication Critical patent/DE1804462A1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H10P14/3602—In-situ cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE19681804462 1968-10-22 1968-10-22 Verfahren zum Herstellen epitaktischer Schichten halbleitender Verbindungen Pending DE1804462A1 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE19681804462 DE1804462A1 (de) 1968-10-22 1968-10-22 Verfahren zum Herstellen epitaktischer Schichten halbleitender Verbindungen
NL6913797A NL6913797A (enExample) 1968-10-22 1969-09-10
CA062952A CA937495A (en) 1968-10-22 1969-09-24 Production of semiconductor arrangements
AT988369A AT323235B (de) 1968-10-22 1969-10-20 Verfahren zum herstellen epitaktischer schichten halbleitender a<iii>b<v>-verbindungen
CH1562369A CH499880A (de) 1968-10-22 1969-10-20 Verfahren zum Herstellen epitaktischer Schichten halbleitender Verbindungen
GB51522/69A GB1273188A (en) 1968-10-22 1969-10-21 Improvements in or relating to the production of semiconductor arrangements
FR6936014A FR2021226B1 (enExample) 1968-10-22 1969-10-21
JP44083914A JPS497992B1 (enExample) 1968-10-22 1969-10-22
SE14487/69A SE360278B (enExample) 1968-10-22 1969-10-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681804462 DE1804462A1 (de) 1968-10-22 1968-10-22 Verfahren zum Herstellen epitaktischer Schichten halbleitender Verbindungen

Publications (1)

Publication Number Publication Date
DE1804462A1 true DE1804462A1 (de) 1970-05-27

Family

ID=5711173

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681804462 Pending DE1804462A1 (de) 1968-10-22 1968-10-22 Verfahren zum Herstellen epitaktischer Schichten halbleitender Verbindungen

Country Status (9)

Country Link
JP (1) JPS497992B1 (enExample)
AT (1) AT323235B (enExample)
CA (1) CA937495A (enExample)
CH (1) CH499880A (enExample)
DE (1) DE1804462A1 (enExample)
FR (1) FR2021226B1 (enExample)
GB (1) GB1273188A (enExample)
NL (1) NL6913797A (enExample)
SE (1) SE360278B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3880589A (en) * 1973-10-23 1975-04-29 Coulter Electronics Fluid circuit including tube rinsing system and bath level maintaining system
FR2378873A1 (fr) * 1977-02-01 1978-08-25 G Pi Procede et dispositif de depot sur un recepteur d'une couche semi-conductrice
FR2466858A1 (fr) * 1979-10-05 1981-04-10 Thomson Csf Procede de passivation de composants semi-conducteurs a l'arseniure de gallium, et composant electronique obtenu par ce procede
JP6451724B2 (ja) 2016-12-01 2019-01-16 栗田工業株式会社 生物活性炭処理装置
JP6365714B1 (ja) 2017-03-16 2018-08-01 栗田工業株式会社 好気性生物処理方法
DE102022131556A1 (de) 2022-11-29 2024-05-29 Infineon Technologies Ag Verfahren zum herstellen eines vorrichtungssubstrats, wafer-bearbeitungseinrichtung und heizeinrichtung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1348734A (fr) * 1962-02-02 1964-01-10 Siemens Ag Perfectionnement à la fabrication des dispositifs à semi-conducteur
DE1176102B (de) * 1962-09-25 1964-08-20 Siemens Ag Verfahren zum tiegelfreien Herstellen von Galliumarsenidstaeben aus Galliumalkylen und Arsenverbindungen bei niedrigen Temperaturen
FR1485970A (fr) * 1965-07-05 1967-06-23 Siemens Ag Procédé de fabrication de couches à croissance épitaxiale en composés semiconducteurs binaires

Also Published As

Publication number Publication date
AT323235B (de) 1975-06-25
CA937495A (en) 1973-11-27
FR2021226A1 (enExample) 1970-07-17
JPS497992B1 (enExample) 1974-02-23
CH499880A (de) 1970-11-30
GB1273188A (en) 1972-05-03
FR2021226B1 (enExample) 1974-10-11
SE360278B (enExample) 1973-09-24
NL6913797A (enExample) 1970-04-24

Similar Documents

Publication Publication Date Title
DE3884682T2 (de) Verfahren zur Züchtung eines Halbleiterkristalles aus III-V-Gruppen-Verbindung auf einem Si-Substrat.
DE3526825C2 (enExample)
DE3526844C2 (enExample)
EP0321909B1 (de) Verfahren und Vorrichtung zum Atomschicht-Epitaxie-Aufwachsen
DE3780664T2 (de) Epitaxiewachstumsverfahren und vorrichtung.
DE69318653T2 (de) Herstellung von dotierten, mit seltener Erde übersättigten Halbleiterschichten durch CVD
DE69008862T2 (de) Procede de metallisation sous vide permettant le depot d&#39;un compose organo-metallique sur un substrat.
DE102005038873A1 (de) Vielkammer-MOCVD-Aufwachsvorrichtung für hohe Geschwindigkeit/ hohen Durchsatz
DE4108306A1 (de) Kristallzuchtverfahren
DE3727264A1 (de) Chemisches dampf-ablagerungsverfahren und vorrichtung zur durchfuehrung derselben
DE112007001523T5 (de) Vorreinigung von Substraten in Epitaxiekammern
DE3526824C2 (enExample)
DE69806054T2 (de) Verfahren zur züchtung einer pufferschicht durch molekularstrahlenepitaxie
DE3687354T2 (de) Verfahren zur dotierungsdiffusion in einem halbleiterkoerper.
DE1804462A1 (de) Verfahren zum Herstellen epitaktischer Schichten halbleitender Verbindungen
DE3526889A1 (de) Einrichtung zum bilden eines halbleiterkristalls
DE3751884T2 (de) Herstellungsverfahren einer niedergeschlagenen Kristallschicht
DE68908325T2 (de) Verfahren zur Herstellung einer Indiumphosphid-Epitaxialschicht auf einer Substratoberfläche.
DE69320540T2 (de) Herstellungsverfahren von Verbindungshalbleitern
DE1644031A1 (de) Verfahren zur Herstellung von hochreinen,epitaktischen Galliumarsenidniederschlaegen
DE69228631T2 (de) Verfahren zur Kristallzüchtung eines III-V Verbindungshalbleiters
DE3752203T2 (de) Verfahren zur Herstellung einer niedergeschlagenen kristalliner Schicht
DE69118414T2 (de) Verfahren zum epitaktischen Wachstum und Dotierung eines Verbindungskristalls
DE3689387T2 (de) Verfahren zur Herstellung einer Dünnschicht aus GaAs.
DE3783632T2 (de) Herstellungsverfahren einer niedergeschlagenen schicht.