DE69118414T2 - Verfahren zum epitaktischen Wachstum und Dotierung eines Verbindungskristalls - Google Patents

Verfahren zum epitaktischen Wachstum und Dotierung eines Verbindungskristalls

Info

Publication number
DE69118414T2
DE69118414T2 DE1991618414 DE69118414T DE69118414T2 DE 69118414 T2 DE69118414 T2 DE 69118414T2 DE 1991618414 DE1991618414 DE 1991618414 DE 69118414 T DE69118414 T DE 69118414T DE 69118414 T2 DE69118414 T2 DE 69118414T2
Authority
DE
Germany
Prior art keywords
doping
epitaxial growth
compound crystal
crystal
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1991618414
Other languages
English (en)
Other versions
DE69118414D1 (de
Inventor
Toru Kurabayashi
Jun-Ichi Nishizawa J Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Japan Science and Technology Agency
Original Assignee
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan filed Critical Research Development Corp of Japan
Publication of DE69118414D1 publication Critical patent/DE69118414D1/de
Application granted granted Critical
Publication of DE69118414T2 publication Critical patent/DE69118414T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE1991618414 1990-01-19 1991-01-18 Verfahren zum epitaktischen Wachstum und Dotierung eines Verbindungskristalls Expired - Fee Related DE69118414T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008399A JPH0649633B2 (ja) 1990-01-19 1990-01-19 化合物結晶のエピタキシャル成長におけるドーピング方法

Publications (2)

Publication Number Publication Date
DE69118414D1 DE69118414D1 (de) 1996-05-09
DE69118414T2 true DE69118414T2 (de) 1996-11-28

Family

ID=11692108

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1991618414 Expired - Fee Related DE69118414T2 (de) 1990-01-19 1991-01-18 Verfahren zum epitaktischen Wachstum und Dotierung eines Verbindungskristalls

Country Status (3)

Country Link
EP (1) EP0439064B1 (de)
JP (1) JPH0649633B2 (de)
DE (1) DE69118414T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69008770T2 (de) * 1989-05-31 1994-11-24 Ibm Magnetische Materialien für Festkörpervorrichtungen.
US6306211B1 (en) * 1999-03-23 2001-10-23 Matsushita Electric Industrial Co., Ltd. Method for growing semiconductor film and method for fabricating semiconductor device
JP4511006B2 (ja) * 2000-09-01 2010-07-28 独立行政法人理化学研究所 半導体の不純物ドーピング方法
JP6055290B2 (ja) * 2012-11-26 2016-12-27 シャープ株式会社 窒化物半導体結晶の製造方法
JP6055325B2 (ja) * 2013-01-30 2016-12-27 シャープ株式会社 窒化物半導体結晶の製造方法
JP6746887B2 (ja) * 2015-09-16 2020-08-26 住友電気工業株式会社 高電子移動度トランジスタ、及び高電子移動度トランジスタの製造方法
JP6696244B2 (ja) * 2016-03-16 2020-05-20 住友電気工業株式会社 高電子移動度トランジスタ及び高電子移動度トランジスタの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US617554A (en) 1899-01-10 Lubricator
JPH0766909B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 元素半導体単結晶薄膜の成長法
JPS62189721A (ja) * 1986-02-17 1987-08-19 Nippon Telegr & Teleph Corp <Ntt> 半導体膜形成法および半導体膜形成用装置
US4767494A (en) * 1986-07-04 1988-08-30 Nippon Telegraph & Telephone Corporation Preparation process of compound semiconductor

Also Published As

Publication number Publication date
DE69118414D1 (de) 1996-05-09
JPH0649633B2 (ja) 1994-06-29
EP0439064A1 (de) 1991-07-31
JPH03215390A (ja) 1991-09-20
EP0439064B1 (de) 1996-04-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: RESEARCH DEVELOPMENT CORP. OF JAPAN, TOKIO/TOK, JP

Owner name: TOHOKU UNIVERSITY, SENDAI, MIYAGI, JP

8339 Ceased/non-payment of the annual fee