DE1719469A1 - Kristallzuechtungsverfahren - Google Patents

Kristallzuechtungsverfahren

Info

Publication number
DE1719469A1
DE1719469A1 DE19681719469 DE1719469A DE1719469A1 DE 1719469 A1 DE1719469 A1 DE 1719469A1 DE 19681719469 DE19681719469 DE 19681719469 DE 1719469 A DE1719469 A DE 1719469A DE 1719469 A1 DE1719469 A1 DE 1719469A1
Authority
DE
Germany
Prior art keywords
crystal
starting crystal
liquid
starting
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681719469
Other languages
German (de)
English (en)
Inventor
Pfann William Gardner
Wagner Richard Siegfried
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1719469A1 publication Critical patent/DE1719469A1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/17—Vapor-liquid-solid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE19681719469 1967-03-01 1968-02-28 Kristallzuechtungsverfahren Pending DE1719469A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61968067A 1967-03-01 1967-03-01

Publications (1)

Publication Number Publication Date
DE1719469A1 true DE1719469A1 (de) 1970-12-03

Family

ID=24482873

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681719469 Pending DE1719469A1 (de) 1967-03-01 1968-02-28 Kristallzuechtungsverfahren

Country Status (6)

Country Link
US (1) US3573967A (US07709020-20100504-C00032.png)
BE (1) BE711473A (US07709020-20100504-C00032.png)
DE (1) DE1719469A1 (US07709020-20100504-C00032.png)
FR (1) FR1556566A (US07709020-20100504-C00032.png)
GB (1) GB1220291A (US07709020-20100504-C00032.png)
NL (1) NL6802862A (US07709020-20100504-C00032.png)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2175595B1 (US07709020-20100504-C00032.png) * 1972-03-15 1974-09-13 Radiotechnique Compelec
US4132571A (en) * 1977-02-03 1979-01-02 International Business Machines Corporation Growth of polycrystalline semiconductor film with intermetallic nucleating layer
US8153482B2 (en) * 2008-09-22 2012-04-10 Sharp Laboratories Of America, Inc. Well-structure anti-punch-through microwire device
WO2013016215A2 (en) 2011-07-22 2013-01-31 The Regents Of The University Of Michigan Electrochemical liquid-liquid-solid deposition processes for production of group iv semiconductor materials
US10538860B2 (en) 2017-01-09 2020-01-21 The Regents Of The University Of Michigan Devices and methods for electrochemical liquid phase epitaxy

Also Published As

Publication number Publication date
FR1556566A (US07709020-20100504-C00032.png) 1969-02-07
NL6802862A (US07709020-20100504-C00032.png) 1968-09-02
US3573967A (en) 1971-04-06
BE711473A (US07709020-20100504-C00032.png) 1968-07-01
GB1220291A (en) 1971-01-27

Similar Documents

Publication Publication Date Title
DE3415799C2 (US07709020-20100504-C00032.png)
DE69736155T2 (de) Nitrid-Einkristall und Verfahren zu seiner Herstellung
DE1290921B (de) Kristallzuechtungsverfahren
DE2745335A1 (de) Vorrichtung zum ziehen von einkristallinem silizium
DE1947382A1 (de) Verfahren zum gesteuerten Zuechten von kristallinen Schichten ternaerer Verbindungen aus Elementen der II. und VI. Spalte des Periodischen Systems der Elemente und Vorrichtung zur Durchfuehrung des Verfahrens
DE112009000328B4 (de) Verfahren zum Aufwachsen eines Siliziumcarbideinkristalls
DE2616700C2 (de) Verfahren zum Ausbilden einer dünnen Schicht aus einem Halbleitermaterial der Gruppen III-V durch epitaxiales Aufwachsen, sowie Vorrichtung zur Durchführung des Verfahrens
DE19826003A1 (de) Nitridkristalle von Metallen der Gruppe III, Gemische dieser Kristalle mit Metallen der Gruppe III und Verfahren zur Herstellung der Kristalle und ihrer Gemische mit Metallen
DE3781016T2 (de) Verfahren zur zuechtung eines multikomponent-kristalls.
DE2122192B2 (de) Verfahren zur Vorbehandlung von beim Züchten von halbleitenden Kristallen als Einschließungsmittel verwendetem Boroxid
DE1719469A1 (de) Kristallzuechtungsverfahren
EP1805354B1 (de) Verfahren zur herstellung von gruppe-iii-nitrid- volumenkristallen oder -kristallschichten aus metallschmelzen
DE3872644T2 (de) Verfahren zum erzeugen von monokristallinen quecksilber-cadmium-tellurid-schichten.
DE1667604B1 (de) Verfahren zur herstellung von kristallinem cadmiumtellurid
EP4018019B1 (de) Verfahren zur bestimmung von spurenmetallen in silicium
DE1161036B (de) Verfahren zur Herstellung von hochdotierten AB-Halbleiterverbindungen
DE1917136C3 (de) Verfahren zur Herstellung von drahtförmigen Kristallen
DE1239669B (de) Verfahren zum Herstellen extrem planer Halbleiterflaechen
DE1257119B (de) Verfahren zum Herstellen epitaktischer Schichten auf {111}-Flaechen dendritischer Halbleiterkristalle
DE1042553B (de) Verfahren zur Herstellung von Silicium grosser Reinheit
DE2332835A1 (de) Supraleitende niob-gallium-legierung
Madjid et al. Diffusion zone process a new method for growing crystals
DE1667604C (de) Verfahren zur Herstellung von kristallinem Cadmiumtellurid
AT232477B (de) Verfahren zum Herstellen von hochreinem, insbesondere einkristallinem Silizium
DE1544241C (de) Verfahren zum Abscheiden einer Schicht aus Galliumarsenid auf einer Unterlage