GB1220291A - Improvements in or relating to crystal-growing methods - Google Patents

Improvements in or relating to crystal-growing methods

Info

Publication number
GB1220291A
GB1220291A GB9853/68A GB985368A GB1220291A GB 1220291 A GB1220291 A GB 1220291A GB 9853/68 A GB9853/68 A GB 9853/68A GB 985368 A GB985368 A GB 985368A GB 1220291 A GB1220291 A GB 1220291A
Authority
GB
United Kingdom
Prior art keywords
solvent
chamber
crystalline material
gas
rotation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB9853/68A
Inventor
William Gardner Pfann
Richard Siegried Wagner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1220291A publication Critical patent/GB1220291A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/17—Vapor-liquid-solid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

1,220,291. Crystallizing. WESTERN ELECTRIC CO. Inc. 29 Feb., 1968 [1 March, 1967], No. 9853/68. Heading B1G. A crystalline material is grown from a solvent in a container 28 in a chamber 27 on to a seed 29, further material (which is formed in the chamber as a result of a gas phase reaction or by the reaction of gas with the solvent) being continuously absorbed into the solvent. Chamber 27 is surrounded by an induction heater 31, contains a melting vessel 30A for solvent and a saturating amount of crystalline material, and has an inlet and outlet for gas. The crystalline material may be Cu, Ge, Si, Zn, GaAs, GaP, Al 2 O 3 , NbC, or SiC. The solvent may be Ag, Au, Cu, Ga, Ni, Pd, or Pt. Agitation may be effected during crystal growth by an encapsulated magnetic stirrer, induction heating, two- or threephase rotation of an electromagnetic field, or rotation of the seed crystal.
GB9853/68A 1967-03-01 1968-02-29 Improvements in or relating to crystal-growing methods Expired GB1220291A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61968067A 1967-03-01 1967-03-01

Publications (1)

Publication Number Publication Date
GB1220291A true GB1220291A (en) 1971-01-27

Family

ID=24482873

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9853/68A Expired GB1220291A (en) 1967-03-01 1968-02-29 Improvements in or relating to crystal-growing methods

Country Status (6)

Country Link
US (1) US3573967A (en)
BE (1) BE711473A (en)
DE (1) DE1719469A1 (en)
FR (1) FR1556566A (en)
GB (1) GB1220291A (en)
NL (1) NL6802862A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2175595B1 (en) * 1972-03-15 1974-09-13 Radiotechnique Compelec
US4132571A (en) * 1977-02-03 1979-01-02 International Business Machines Corporation Growth of polycrystalline semiconductor film with intermetallic nucleating layer
US8153482B2 (en) * 2008-09-22 2012-04-10 Sharp Laboratories Of America, Inc. Well-structure anti-punch-through microwire device
US9388498B2 (en) 2011-07-22 2016-07-12 The Regents Of The University Of Michigan Electrochemical liquid-liquid-solid deposition processes for production of group IV semiconductor materials
US10538860B2 (en) 2017-01-09 2020-01-21 The Regents Of The University Of Michigan Devices and methods for electrochemical liquid phase epitaxy

Also Published As

Publication number Publication date
FR1556566A (en) 1969-02-07
NL6802862A (en) 1968-09-02
DE1719469A1 (en) 1970-12-03
BE711473A (en) 1968-07-01
US3573967A (en) 1971-04-06

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