DE1614797B2 - Halbleiterschaltungsanordnung mit einem unipolaren und einem bipolaren transistor und verfahren zu ihrer herstellung - Google Patents
Halbleiterschaltungsanordnung mit einem unipolaren und einem bipolaren transistor und verfahren zu ihrer herstellungInfo
- Publication number
- DE1614797B2 DE1614797B2 DE1961T0033564 DET0033564A DE1614797B2 DE 1614797 B2 DE1614797 B2 DE 1614797B2 DE 1961T0033564 DE1961T0033564 DE 1961T0033564 DE T0033564 A DET0033564 A DE T0033564A DE 1614797 B2 DE1614797 B2 DE 1614797B2
- Authority
- DE
- Germany
- Prior art keywords
- zone
- transistor
- unipolar
- bipolar transistor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 12
- 230000005669 field effect Effects 0.000 description 6
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 4
- 238000003754 machining Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
- H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/354—Astable circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2613460A | 1960-05-02 | 1960-05-02 | |
| US2612660A | 1960-05-02 | 1960-05-02 | |
| US26133A US3130378A (en) | 1960-05-02 | 1960-05-02 | Relaxation oscillator utilizing field-effect device |
| US26090A US3112411A (en) | 1960-05-02 | 1960-05-02 | Ring counter utilizing bipolar field-effect devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1614797A1 DE1614797A1 (de) | 1970-09-24 |
| DE1614797B2 true DE1614797B2 (de) | 1976-08-12 |
Family
ID=27487477
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DET20103A Pending DE1242690B (de) | 1960-05-02 | 1961-05-02 | Schaltungsanordnung mit einem unipolaren und einem bipolaren Transistor |
| DE1961T0033564 Granted DE1614797B2 (de) | 1960-05-02 | 1961-05-02 | Halbleiterschaltungsanordnung mit einem unipolaren und einem bipolaren transistor und verfahren zu ihrer herstellung |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DET20103A Pending DE1242690B (de) | 1960-05-02 | 1961-05-02 | Schaltungsanordnung mit einem unipolaren und einem bipolaren Transistor |
Country Status (7)
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE632998A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1962-05-31 | |||
| NL296208A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1962-08-03 | |||
| JPS5370679A (en) * | 1976-12-06 | 1978-06-23 | Nippon Gakki Seizo Kk | Transistor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL83838C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1952-12-01 | 1957-01-15 | ||
| GB807582A (en) * | 1954-12-27 | 1959-01-21 | Clevite Corp | High power junction transistor |
| US2998534A (en) * | 1958-09-04 | 1961-08-29 | Clevite Corp | Symmetrical junction transistor device and circuit |
| US2967793A (en) * | 1959-02-24 | 1961-01-10 | Westinghouse Electric Corp | Semiconductor devices with bi-polar injection characteristics |
-
0
- NL NL264274D patent/NL264274A/xx unknown
-
1961
- 1961-05-01 GB GB23277/64A patent/GB983275A/en not_active Expired
- 1961-05-01 GB GB15723/61A patent/GB983252A/en not_active Expired
- 1961-05-02 DE DET20103A patent/DE1242690B/de active Pending
- 1961-05-02 CH CH511461A patent/CH397873A/fr unknown
- 1961-05-02 BE BE603266A patent/BE603266A/fr unknown
- 1961-05-02 DE DE1961T0033564 patent/DE1614797B2/de active Granted
- 1961-05-02 FR FR860525A patent/FR1302417A/fr not_active Expired
-
1969
- 1969-12-31 MY MY1969295A patent/MY6900295A/xx unknown
- 1969-12-31 MY MY1969298A patent/MY6900298A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1242690B (de) | 1967-06-22 |
| BE603266A (fr) | 1961-11-03 |
| CH397873A (fr) | 1965-08-31 |
| FR1302417A (fr) | 1962-08-31 |
| GB983252A (en) | 1965-02-17 |
| GB983275A (en) | 1965-02-17 |
| NL264274A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1900-01-01 |
| MY6900295A (en) | 1969-12-31 |
| DE1614797A1 (de) | 1970-09-24 |
| MY6900298A (en) | 1969-12-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69507284T2 (de) | Halbleiter mit einem träger auf dem ein substrat mit einem halbleiter-element mittels einer klebeschicht und ein leiterbahn-muster befestigt sind | |
| DE3134110C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE1764155C3 (de) | Verfahren zum Herstellen eines Halbleiterbauelementes aus einem Siliciumkörper | |
| DE1130932B (de) | Verfahren zur Herstellung kleinflaechiger pn-UEbergaenge in Halbleiter-koerpern von einem Leitfaehigkeitstyp von Halbleiteranordnungen, z. B. Dioden oder Transistoren | |
| DE1959895A1 (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE1764847B2 (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
| DE3020609C2 (de) | Verfahren zum Herstellen einer integrierten Schaltung mit wenigstens einem I↑2↑L-Element | |
| DE1194500B (de) | Halbleiterbauelement mit einer Mehrzahl von eingesetzten streifenfoermigen Zonen eines Leitfaehigkeitstyps und Verfahren zum Herstellen | |
| DE1901186A1 (de) | Integrierte Schaltung und Verfahren zu deren Herstellung | |
| DE69027831T2 (de) | Integrierte MOS-Schaltung | |
| DE2500235A1 (de) | Planarer unijunction-transistor | |
| DE1614797B2 (de) | Halbleiterschaltungsanordnung mit einem unipolaren und einem bipolaren transistor und verfahren zu ihrer herstellung | |
| DE4003681A1 (de) | Halbleiteranordnung und verfahren zu ihrer herstellung | |
| DE1614797C3 (de) | Halbleiterschaltungsanordnung mit einem unipolaren und einem bipolaren Transistor und Verfahren zu ihrer Herstellung | |
| DE2039091A1 (de) | Transistor mit minimaler Seiteninjektion in einem monolithischen Halbleiterkoerper und Verfahren zur Herstellung dieses Transistors | |
| DE1240590C2 (de) | Integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellung | |
| EP0103653B1 (de) | Verfahren zum Herstellen einer monolithisch integrierten Schaltung mit mindestens einem bipolaren Planartransistor | |
| DE69422252T2 (de) | Halbleiteranordnung mit einem Halbleiterelement ausgestaltet in einer Mesastruktur | |
| DE2107671A1 (de) | Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| DE2419817A1 (de) | Verfahren zur herstellung bipolarer transistoren | |
| DE1942239C2 (de) | Verfahren zur Herstellung eines Lateraltransistors | |
| DE1288197C2 (de) | Verfahren zum herstellen einer grossen stueckzahl von gegeneinander isolierten feldeffekt-transistoren | |
| DE2216642C3 (de) | Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE2105178C3 (de) | Integrierte Halbleiterschaltung | |
| DE1489191C3 (de) | Transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 |