DE1242690B - Schaltungsanordnung mit einem unipolaren und einem bipolaren Transistor - Google Patents
Schaltungsanordnung mit einem unipolaren und einem bipolaren TransistorInfo
- Publication number
- DE1242690B DE1242690B DET20103A DET0020103A DE1242690B DE 1242690 B DE1242690 B DE 1242690B DE T20103 A DET20103 A DE T20103A DE T0020103 A DET0020103 A DE T0020103A DE 1242690 B DE1242690 B DE 1242690B
- Authority
- DE
- Germany
- Prior art keywords
- transistor
- electrode
- voltage
- stage
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 description 81
- 239000000463 material Substances 0.000 description 35
- 239000003990 capacitor Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241000158147 Sator Species 0.000 description 1
- 240000008042 Zea mays Species 0.000 description 1
- 235000016383 Zea mays subsp huehuetenangensis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 235000009973 maize Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 210000002105 tongue Anatomy 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
- H03K23/002—Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/354—Astable circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2613460A | 1960-05-02 | 1960-05-02 | |
| US2612660A | 1960-05-02 | 1960-05-02 | |
| US26133A US3130378A (en) | 1960-05-02 | 1960-05-02 | Relaxation oscillator utilizing field-effect device |
| US26090A US3112411A (en) | 1960-05-02 | 1960-05-02 | Ring counter utilizing bipolar field-effect devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1242690B true DE1242690B (de) | 1967-06-22 |
Family
ID=27487477
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DET20103A Pending DE1242690B (de) | 1960-05-02 | 1961-05-02 | Schaltungsanordnung mit einem unipolaren und einem bipolaren Transistor |
| DE1961T0033564 Granted DE1614797B2 (de) | 1960-05-02 | 1961-05-02 | Halbleiterschaltungsanordnung mit einem unipolaren und einem bipolaren transistor und verfahren zu ihrer herstellung |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1961T0033564 Granted DE1614797B2 (de) | 1960-05-02 | 1961-05-02 | Halbleiterschaltungsanordnung mit einem unipolaren und einem bipolaren transistor und verfahren zu ihrer herstellung |
Country Status (7)
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE632998A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1962-05-31 | |||
| NL296208A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1962-08-03 | |||
| JPS5370679A (en) * | 1976-12-06 | 1978-06-23 | Nippon Gakki Seizo Kk | Transistor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1141521A (fr) * | 1954-12-27 | 1957-09-03 | Clevite Corp | Transistor à jonction fonctionnant à grande puissance |
| DE966849C (de) * | 1952-12-01 | 1957-09-12 | Philips Nv | Transistorelement und Transistorschaltung |
| FR1240436A (fr) * | 1958-09-04 | 1960-09-02 | Clevite Corp | Transistor |
| FR1249135A (fr) * | 1959-02-24 | 1960-12-23 | Westinghouse Electric Corp | Appareils semi-conducteurs à injection bipolaire |
-
0
- NL NL264274D patent/NL264274A/xx unknown
-
1961
- 1961-05-01 GB GB23277/64A patent/GB983275A/en not_active Expired
- 1961-05-01 GB GB15723/61A patent/GB983252A/en not_active Expired
- 1961-05-02 DE DET20103A patent/DE1242690B/de active Pending
- 1961-05-02 CH CH511461A patent/CH397873A/fr unknown
- 1961-05-02 BE BE603266A patent/BE603266A/fr unknown
- 1961-05-02 DE DE1961T0033564 patent/DE1614797B2/de active Granted
- 1961-05-02 FR FR860525A patent/FR1302417A/fr not_active Expired
-
1969
- 1969-12-31 MY MY1969295A patent/MY6900295A/xx unknown
- 1969-12-31 MY MY1969298A patent/MY6900298A/xx unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE966849C (de) * | 1952-12-01 | 1957-09-12 | Philips Nv | Transistorelement und Transistorschaltung |
| FR1141521A (fr) * | 1954-12-27 | 1957-09-03 | Clevite Corp | Transistor à jonction fonctionnant à grande puissance |
| FR1240436A (fr) * | 1958-09-04 | 1960-09-02 | Clevite Corp | Transistor |
| DE1115837B (de) | 1958-09-04 | 1961-10-26 | Intermetall | Flaechentransistor mit einem plaettchenfoermigen Halbleiterkoerper |
| FR1249135A (fr) * | 1959-02-24 | 1960-12-23 | Westinghouse Electric Corp | Appareils semi-conducteurs à injection bipolaire |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1614797B2 (de) | 1976-08-12 |
| BE603266A (fr) | 1961-11-03 |
| CH397873A (fr) | 1965-08-31 |
| FR1302417A (fr) | 1962-08-31 |
| GB983252A (en) | 1965-02-17 |
| GB983275A (en) | 1965-02-17 |
| NL264274A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1900-01-01 |
| MY6900295A (en) | 1969-12-31 |
| DE1614797A1 (de) | 1970-09-24 |
| MY6900298A (en) | 1969-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E77 | Valid patent as to the heymanns-index 1977 |