DE1544204C3 - Verfahren zum Herstellen einer auf ein Halbleitersubstrat aufgedampften Halbleiterschicht - Google Patents

Verfahren zum Herstellen einer auf ein Halbleitersubstrat aufgedampften Halbleiterschicht

Info

Publication number
DE1544204C3
DE1544204C3 DE1544204A DE1544204A DE1544204C3 DE 1544204 C3 DE1544204 C3 DE 1544204C3 DE 1544204 A DE1544204 A DE 1544204A DE 1544204 A DE1544204 A DE 1544204A DE 1544204 C3 DE1544204 C3 DE 1544204C3
Authority
DE
Germany
Prior art keywords
substrate
hydrogen
vapor deposition
minutes
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1544204A
Other languages
German (de)
English (en)
Other versions
DE1544204A1 (de
DE1544204B2 (de
Inventor
Edward George Wappinger Falls Grochowski
Vincent James Poughkeepsie Lyons
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE1544204A1 publication Critical patent/DE1544204A1/de
Publication of DE1544204B2 publication Critical patent/DE1544204B2/de
Application granted granted Critical
Publication of DE1544204C3 publication Critical patent/DE1544204C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE1544204A 1964-09-14 1965-09-04 Verfahren zum Herstellen einer auf ein Halbleitersubstrat aufgedampften Halbleiterschicht Expired DE1544204C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US39626764A 1964-09-14 1964-09-14

Publications (3)

Publication Number Publication Date
DE1544204A1 DE1544204A1 (de) 1970-03-12
DE1544204B2 DE1544204B2 (de) 1972-11-16
DE1544204C3 true DE1544204C3 (de) 1974-02-14

Family

ID=23566545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1544204A Expired DE1544204C3 (de) 1964-09-14 1965-09-04 Verfahren zum Herstellen einer auf ein Halbleitersubstrat aufgedampften Halbleiterschicht

Country Status (8)

Country Link
US (1) US3523046A (enExample)
AT (1) AT256184B (enExample)
BE (1) BE669190A (enExample)
CH (1) CH464154A (enExample)
DE (1) DE1544204C3 (enExample)
GB (1) GB1056720A (enExample)
NL (1) NL6511881A (enExample)
SE (1) SE322844B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831021B1 (enExample) * 1968-09-14 1973-09-26
US3901182A (en) * 1972-05-18 1975-08-26 Harris Corp Silicon source feed process
US3964089A (en) * 1972-09-21 1976-06-15 Bell Telephone Laboratories, Incorporated Junction transistor with linearly graded impurity concentration in the high resistivity portion of its collector zone
US3849789A (en) * 1972-11-01 1974-11-19 Gen Electric Schottky barrier diodes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3172791A (en) * 1960-03-31 1965-03-09 Crystallography orientation of a cy- lindrical rod of semiconductor mate- rial in a vapor deposition process to obtain a polygonal shaped rod
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
NL265823A (enExample) * 1960-06-13
US3170825A (en) * 1961-10-02 1965-02-23 Merck & Co Inc Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
US3189494A (en) * 1963-08-22 1965-06-15 Texas Instruments Inc Epitaxial crystal growth onto a stabilizing layer which prevents diffusion from the substrate

Also Published As

Publication number Publication date
CH464154A (de) 1968-10-31
AT256184B (de) 1967-08-10
DE1544204A1 (de) 1970-03-12
GB1056720A (en) 1967-01-25
DE1544204B2 (de) 1972-11-16
BE669190A (enExample) 1965-12-31
NL6511881A (enExample) 1966-03-15
SE322844B (enExample) 1970-04-20
US3523046A (en) 1970-08-04

Similar Documents

Publication Publication Date Title
DE1222586B (de) Formierung von Halbleitern
DE4325804A1 (de) Verfahren zum Herstellen von hochohmigem Siliziumkarbid
DE2418662A1 (de) Verfahren zur bildung eines niederschlags aus der dampfphase auf einer vielzahl flacher substrate
DE2005271C3 (de) Epitaxialverfahren zum Aufwachsen von Halbleitermaterial auf einem dotierten Halbleitersubstrat
DE1034776B (de) Diffusionsverfahren fuer leitungstypbestimmende Verunreinigungen in Halbleiteroberflaechen
DE1285465B (de) Verfahren zum epitaktischen Aufwachsen von Schichten aus Silicium oder Germanium
DE1544204C3 (de) Verfahren zum Herstellen einer auf ein Halbleitersubstrat aufgedampften Halbleiterschicht
DE2419142A1 (de) Verfahren zum aufwachsen einer halbleiterschicht aus der dampfphase
DE1544245B2 (de) Verfahren zum Dotieren von Halbleiter korpern
DE974364C (de) Verfahren zur Herstellung von P-N-Schichten in Halbleiterkoerpern durch Eintauchen in eine Schmelze
DE1901819B2 (de) Herstellungsverfahren für polykristalline Siliciumschichten
DE2211709B2 (de) Verfahren zum Dotieren von Halbleitermaterial
DE2154386C3 (de) Verfahren zum Herstellen einer epitaktischen Halbleiterschicht auf einem Halbleitersubstrat durch Abscheiden aus einem Reaktionsgas/Trägergas-Gemisch
DE69228631T2 (de) Verfahren zur Kristallzüchtung eines III-V Verbindungshalbleiters
DE3689387T2 (de) Verfahren zur Herstellung einer Dünnschicht aus GaAs.
DE2732582C2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE102019008928B9 (de) Gasphasenepitaxieverfahren
DE2013625A1 (de) Verfahren zur Vorablagerung von Fremdstoffen auf eine Halbleiteroberfläche
DE1228340B (de) Schnellschaltende Halbleiterdiode mit verringerter Erholungszeit und epitaktisches Verfahren zu ihrer Herstellung
DE1544191B2 (de) Verfahren zur Herstellung von Halbleitermaterial
DE1289830B (de) Verfahren zum Herstellen epitaktischer Aufwachsschichten aus halbleitenden A B-Verbindungen
DE1544191C3 (de) Verfahren zur Herstellung von Halbleitermaterial
DE69030696T2 (de) Dotierungsverfahren mittels einer adsorbierten Diffusionquelle
DE2547692A1 (de) Verfahren zum herstellen einer halbleitervorrichtung
DE2223261A1 (de) Verfahren und Vorrichtung zur Herstellung eines einkristallinen Substrats mit gutem spezifischem Widerstand

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)