GB1056720A - Improved method of epitaxially vapour depositing semiconductor material - Google Patents

Improved method of epitaxially vapour depositing semiconductor material

Info

Publication number
GB1056720A
GB1056720A GB36219/65A GB3621965A GB1056720A GB 1056720 A GB1056720 A GB 1056720A GB 36219/65 A GB36219/65 A GB 36219/65A GB 3621965 A GB3621965 A GB 3621965A GB 1056720 A GB1056720 A GB 1056720A
Authority
GB
United Kingdom
Prior art keywords
substrate
silicon
chamber
vapour
epitaxially
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB36219/65A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1056720A publication Critical patent/GB1056720A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB36219/65A 1964-09-14 1965-08-24 Improved method of epitaxially vapour depositing semiconductor material Expired GB1056720A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US39626764A 1964-09-14 1964-09-14

Publications (1)

Publication Number Publication Date
GB1056720A true GB1056720A (en) 1967-01-25

Family

ID=23566545

Family Applications (1)

Application Number Title Priority Date Filing Date
GB36219/65A Expired GB1056720A (en) 1964-09-14 1965-08-24 Improved method of epitaxially vapour depositing semiconductor material

Country Status (8)

Country Link
US (1) US3523046A (enExample)
AT (1) AT256184B (enExample)
BE (1) BE669190A (enExample)
CH (1) CH464154A (enExample)
DE (1) DE1544204C3 (enExample)
GB (1) GB1056720A (enExample)
NL (1) NL6511881A (enExample)
SE (1) SE322844B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831021B1 (enExample) * 1968-09-14 1973-09-26
US3901182A (en) * 1972-05-18 1975-08-26 Harris Corp Silicon source feed process
US3964089A (en) * 1972-09-21 1976-06-15 Bell Telephone Laboratories, Incorporated Junction transistor with linearly graded impurity concentration in the high resistivity portion of its collector zone
US3849789A (en) * 1972-11-01 1974-11-19 Gen Electric Schottky barrier diodes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3172791A (en) * 1960-03-31 1965-03-09 Crystallography orientation of a cy- lindrical rod of semiconductor mate- rial in a vapor deposition process to obtain a polygonal shaped rod
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
NL265823A (enExample) * 1960-06-13
US3170825A (en) * 1961-10-02 1965-02-23 Merck & Co Inc Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
US3189494A (en) * 1963-08-22 1965-06-15 Texas Instruments Inc Epitaxial crystal growth onto a stabilizing layer which prevents diffusion from the substrate

Also Published As

Publication number Publication date
CH464154A (de) 1968-10-31
DE1544204C3 (de) 1974-02-14
AT256184B (de) 1967-08-10
DE1544204A1 (de) 1970-03-12
DE1544204B2 (de) 1972-11-16
BE669190A (enExample) 1965-12-31
NL6511881A (enExample) 1966-03-15
SE322844B (enExample) 1970-04-20
US3523046A (en) 1970-08-04

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