GB988897A - Epitaxial growth process - Google Patents

Epitaxial growth process

Info

Publication number
GB988897A
GB988897A GB45458/62A GB4545862A GB988897A GB 988897 A GB988897 A GB 988897A GB 45458/62 A GB45458/62 A GB 45458/62A GB 4545862 A GB4545862 A GB 4545862A GB 988897 A GB988897 A GB 988897A
Authority
GB
United Kingdom
Prior art keywords
epitaxial growth
wafer
silicon
opening
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB45458/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of GB988897A publication Critical patent/GB988897A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • B01J2/30—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic using agents to prevent the granules sticking together; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C22C21/02—Alloys based on aluminium with silicon as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/04—Pattern deposit, e.g. by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

An epitaxial growth on a wafer of semi-conducting material, e.g. silicon, is effected by forming a coating of silicon oxide on the wafer as a mask, forming an opening in the mask, and heating the wafer to the temperature required for epitaxial growth while applying a semi-conducting material to the opening by vapour deposition, whereby epitaxial growth is limited laterally, to the periphery of the opening. Preferably heating of the cleaned silicon wafer is effected above 1050 DEG C., e.g. 1200-1650 DEG C., whereby the masking oxide is slowly evaporated in the presence of silicon vapour, and leaves a mesa-type epitaxial growth free from a surrounding mask. Acceptor or donor substances, e.g. B and Sb, may be added to build up junction resistors.
GB45458/62A 1961-12-11 1962-12-03 Epitaxial growth process Expired GB988897A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US158298A US3156591A (en) 1961-12-11 1961-12-11 Epitaxial growth through a silicon dioxide mask in a vacuum vapor deposition process

Publications (1)

Publication Number Publication Date
GB988897A true GB988897A (en) 1965-04-14

Family

ID=22567485

Family Applications (1)

Application Number Title Priority Date Filing Date
GB45458/62A Expired GB988897A (en) 1961-12-11 1962-12-03 Epitaxial growth process

Country Status (5)

Country Link
US (1) US3156591A (en)
CH (1) CH409887A (en)
DE (1) DE1444496A1 (en)
GB (1) GB988897A (en)
NL (1) NL286507A (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3265542A (en) * 1962-03-15 1966-08-09 Philco Corp Semiconductor device and method for the fabrication thereof
US3296040A (en) * 1962-08-17 1967-01-03 Fairchild Camera Instr Co Epitaxially growing layers of semiconductor through openings in oxide mask
US3447977A (en) * 1962-08-23 1969-06-03 Siemens Ag Method of producing semiconductor members
NL294648A (en) * 1962-08-31
US3298082A (en) * 1963-05-14 1967-01-17 Hitachi Ltd Method of making semiconductors and diffusion thereof
US3319311A (en) * 1963-05-24 1967-05-16 Ibm Semiconductor devices and their fabrication
DE1290925B (en) * 1963-06-10 1969-03-20 Philips Nv Process for depositing silicon on a semiconductor body
DE1227154B (en) * 1963-07-23 1966-10-20 Siemens Ag Method for producing a pn junction in a monocrystalline semiconductor arrangement
US3326729A (en) * 1963-08-20 1967-06-20 Hughes Aircraft Co Epitaxial method for the production of microcircuit components
US3287186A (en) * 1963-11-26 1966-11-22 Rca Corp Semiconductor devices and method of manufacture thereof
US3493442A (en) * 1963-11-26 1970-02-03 Int Rectifier Corp High voltage semiconductor device
US3283223A (en) * 1963-12-27 1966-11-01 Ibm Transistor and method of fabrication to minimize surface recombination effects
US3409483A (en) * 1964-05-01 1968-11-05 Texas Instruments Inc Selective deposition of semiconductor materials
DE1210955B (en) * 1964-06-09 1966-02-17 Ibm Deutschland Process for masking crystals and for manufacturing semiconductor components
US3409482A (en) * 1964-12-30 1968-11-05 Sprague Electric Co Method of making a transistor with a very thin diffused base and an epitaxially grown emitter
GB1124762A (en) * 1965-01-08 1968-08-21 Lucas Industries Ltd Semi-conductor devices
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels
US3511702A (en) * 1965-08-20 1970-05-12 Motorola Inc Epitaxial growth process from an atmosphere composed of a hydrogen halide,semiconductor halide and hydrogen
US3425879A (en) * 1965-10-24 1969-02-04 Texas Instruments Inc Method of making shaped epitaxial deposits
US3536547A (en) * 1968-03-25 1970-10-27 Bell Telephone Labor Inc Plasma deposition of oxide coatings on silicon and electron bombardment of portions thereof to be etched selectively
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US4274892A (en) * 1978-12-14 1981-06-23 Trw Inc. Dopant diffusion method of making semiconductor products
US4462847A (en) * 1982-06-21 1984-07-31 Texas Instruments Incorporated Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition
US5284521A (en) * 1990-09-21 1994-02-08 Anelva Corporation Vacuum film forming apparatus
US7547897B2 (en) * 2006-05-26 2009-06-16 Cree, Inc. High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantation

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL180750B (en) * 1952-08-20 Bristol Myers Co PROCEDURE FOR PREPARING A 7-AMINO-3-CEFEM-4-CARBONIC ACID BY CONVERTING A 7-ACYLAMINO-3-CEFEM-4-CARBONIC ACID DERIVATIVE.
US2814589A (en) * 1955-08-02 1957-11-26 Bell Telephone Labor Inc Method of plating silicon
NL121810C (en) * 1955-11-04
BE563088A (en) * 1957-02-25
US3098774A (en) * 1960-05-02 1963-07-23 Mark Albert Process for producing single crystal silicon surface layers
US3031270A (en) * 1960-05-04 1962-04-24 Siemens Ag Method of producing silicon single crystals

Also Published As

Publication number Publication date
NL286507A (en)
CH409887A (en) 1966-03-31
US3156591A (en) 1964-11-10
DE1444496A1 (en) 1968-10-31

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