GB839081A - Improvements in or relating to evaporation processes for the deposition of metals, particularly for use in the making of semi-conductor devices - Google Patents

Improvements in or relating to evaporation processes for the deposition of metals, particularly for use in the making of semi-conductor devices

Info

Publication number
GB839081A
GB839081A GB3877557A GB3877557A GB839081A GB 839081 A GB839081 A GB 839081A GB 3877557 A GB3877557 A GB 3877557A GB 3877557 A GB3877557 A GB 3877557A GB 839081 A GB839081 A GB 839081A
Authority
GB
United Kingdom
Prior art keywords
metal
evaporation
impurities
deposition
metals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3877557A
Inventor
Thorndike Chang Teh New
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Priority to GB3877557A priority Critical patent/GB839081A/en
Publication of GB839081A publication Critical patent/GB839081A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

839,081. Coating by vapour deposition. ' WESTINGHOUSE ELECTRIC CORPORATION. Dec. 13, 1957, No. 38775/57. Class 82(2) [Also in Group XXXVI] In a process of evaporating the metal of a metal body to deposit a coating thereof on a member disposed below the metal body, the temperature of the body is raised to the evaporation point so as to effect the evaporation of volatile impurities and metal, the impurities and metal flowing toward the member are collected for an initial time period to prevent them reaching the member, and pure metal is allowed to deposit on the member only after the impurities volatilizable at the evaporation temperature have been driven off. The process is applicable to the deposition of doping material upon a semiconductor such as Ge or Si to provide a P-N junction therein. As shown, Ge wafers 14 are heated by graphite heater 15 and coated with Al by evaporation from body 28, impurities from said body being intercepted during the initial stage of the evaporation by shield 30 which is swung aside when all the impurities have been dissipated. Other metals which may be evaporated are In, As, Sb, Ga and Ag. Pure Al for making a transistor junction may be produced by evaporating Al on to a glass plate and then stripping off the resulting film.
GB3877557A 1957-12-13 1957-12-13 Improvements in or relating to evaporation processes for the deposition of metals, particularly for use in the making of semi-conductor devices Expired GB839081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3877557A GB839081A (en) 1957-12-13 1957-12-13 Improvements in or relating to evaporation processes for the deposition of metals, particularly for use in the making of semi-conductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3877557A GB839081A (en) 1957-12-13 1957-12-13 Improvements in or relating to evaporation processes for the deposition of metals, particularly for use in the making of semi-conductor devices

Publications (1)

Publication Number Publication Date
GB839081A true GB839081A (en) 1960-06-29

Family

ID=10405616

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3877557A Expired GB839081A (en) 1957-12-13 1957-12-13 Improvements in or relating to evaporation processes for the deposition of metals, particularly for use in the making of semi-conductor devices

Country Status (1)

Country Link
GB (1) GB839081A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2001819A1 (en) * 1968-02-13 1969-10-03 Philips Nv PROCESS AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2001819A1 (en) * 1968-02-13 1969-10-03 Philips Nv PROCESS AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICES

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