GB1022477A - Improvements in or relating to epitaxial deposition of semiconductor devices - Google Patents

Improvements in or relating to epitaxial deposition of semiconductor devices

Info

Publication number
GB1022477A
GB1022477A GB4538963A GB4538963A GB1022477A GB 1022477 A GB1022477 A GB 1022477A GB 4538963 A GB4538963 A GB 4538963A GB 4538963 A GB4538963 A GB 4538963A GB 1022477 A GB1022477 A GB 1022477A
Authority
GB
United Kingdom
Prior art keywords
silicon
coating
article
boron
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4538963A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of GB1022477A publication Critical patent/GB1022477A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A graphite article is given a coating of silicon carbide by heating the article in a vacuum to 1300 DEG C., passing trichlorosilane over the heated article to deposit silicon thereon, raising the temperature of the article to melt the silicon and produce a uniform coating and thereafter raising the temperature to 2000 DEG C. to cause the silicon and graphite surface to react to form the desired silicon carbide coating. If desired, the silicon coating may be melted and cooled several times before being heated to 2000 DEG C. Preferably the said article is a plate and the treated plate may be used as a heating element and supporting member for wafers of silicon during the epitaxial deposition thereon of silicon by the decomposition of a vaporous silicon compound, e.g. trichlorosilane. The coating of silicon thus deposited on the wafer may be followed by a coat of boron by replacing the silicon compound with a boron compound e.g. BCl3. When the boron coated wafers are maintained at 1200 DEG C. for 10 minutes, the boron diffuses into the previous silicon coating and produces a semiconductor device.ALSO:A graphite article is given a coating of silicon carbide by heating the article in a vacuum to 1300 DEG C., passing trichlorosilane over the heated article to deposit silicon thereon, raising the temperature of the article to melt the silicon and produce a uniform coating and thereafter raising the temperature to 2000 DEG C. to cause the silicon and graphite surface to react to form the desired silicon carbide coating. If desired the silicon coating may be melted and cooled several times before being finally heated to 2000 DEG C. Preferably, the said article is a plate and the treated plate may be used as a heating element and supporting member for wafers of silicon, during the epitaxial deposition thereon of silicon, by the decomposition of a vaporous silicon compound, e.g. trichlorosilane. The coating of silicon thus deposited on the wafer may be followed by a coat of boron by replacing the silicon compound with a boron compound, e.g. BCl3. When the boron coated wafers are maintained at 1200 DEG C. for 10 minutes, the boron diffuses into the previous silicon coating and produces a semi-conductor device.
GB4538963A 1962-12-14 1963-11-18 Improvements in or relating to epitaxial deposition of semiconductor devices Expired GB1022477A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24466462A 1962-12-14 1962-12-14

Publications (1)

Publication Number Publication Date
GB1022477A true GB1022477A (en) 1966-03-16

Family

ID=22923635

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4538963A Expired GB1022477A (en) 1962-12-14 1963-11-18 Improvements in or relating to epitaxial deposition of semiconductor devices

Country Status (2)

Country Link
DE (1) DE1196170B (en)
GB (1) GB1022477A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2182061A (en) * 1985-10-24 1987-05-07 Rca Corp Vapor deposition apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1045995B (en) * 1953-12-23 1958-12-11 Siemens Ag Process for the production of the purest silicon

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2182061A (en) * 1985-10-24 1987-05-07 Rca Corp Vapor deposition apparatus
GB2182061B (en) * 1985-10-24 1990-02-21 Rca Corp Substrate treatment apparatus

Also Published As

Publication number Publication date
DE1196170B (en) 1965-07-08

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