DE1539853A1 - Integrierte elektronische Halbleiterschaltung und Verfahren zu deren Herstellung - Google Patents

Integrierte elektronische Halbleiterschaltung und Verfahren zu deren Herstellung

Info

Publication number
DE1539853A1
DE1539853A1 DE19661539853 DE1539853A DE1539853A1 DE 1539853 A1 DE1539853 A1 DE 1539853A1 DE 19661539853 DE19661539853 DE 19661539853 DE 1539853 A DE1539853 A DE 1539853A DE 1539853 A1 DE1539853 A1 DE 1539853A1
Authority
DE
Germany
Prior art keywords
silicon
silicon carbide
islands
wafer
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661539853
Other languages
German (de)
English (en)
Inventor
Tucker Thomas Neil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of DE1539853A1 publication Critical patent/DE1539853A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE19661539853 1965-03-26 1966-03-11 Integrierte elektronische Halbleiterschaltung und Verfahren zu deren Herstellung Pending DE1539853A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US443046A US3397448A (en) 1965-03-26 1965-03-26 Semiconductor integrated circuits and method of making same

Publications (1)

Publication Number Publication Date
DE1539853A1 true DE1539853A1 (de) 1969-07-24

Family

ID=23759211

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661539853 Pending DE1539853A1 (de) 1965-03-26 1966-03-11 Integrierte elektronische Halbleiterschaltung und Verfahren zu deren Herstellung

Country Status (6)

Country Link
US (1) US3397448A (cg-RX-API-DMAC7.html)
CH (1) CH482303A (cg-RX-API-DMAC7.html)
DE (1) DE1539853A1 (cg-RX-API-DMAC7.html)
GB (1) GB1106197A (cg-RX-API-DMAC7.html)
NL (2) NL6603854A (cg-RX-API-DMAC7.html)
SE (1) SE303553B (cg-RX-API-DMAC7.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3451867A (en) * 1966-05-31 1969-06-24 Gen Electric Processes of epitaxial deposition or diffusion employing a silicon carbide masking layer
US3508980A (en) * 1967-07-26 1970-04-28 Motorola Inc Method of fabricating an integrated circuit structure with dielectric isolation
US3571919A (en) * 1968-09-25 1971-03-23 Texas Instruments Inc Semiconductor device fabrication
US3838441A (en) * 1968-12-04 1974-09-24 Texas Instruments Inc Semiconductor device isolation using silicon carbide
JPS5910073B2 (ja) * 1972-10-27 1984-03-06 株式会社日立製作所 シリコン・ゲ−トｍｏｓ型半導体装置の製造方法
US4028149A (en) * 1976-06-30 1977-06-07 Ibm Corporation Process for forming monocrystalline silicon carbide on silicon substrates
JPS5893250A (ja) * 1981-11-30 1983-06-02 Toshiba Corp 半導体装置
JPS5978555A (ja) * 1982-10-27 1984-05-07 Toshiba Corp 半導体装置
US4524237A (en) * 1984-02-08 1985-06-18 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Increased voltage photovoltaic cell
US5229625A (en) * 1986-08-18 1993-07-20 Sharp Kabushiki Kaisha Schottky barrier gate type field effect transistor
SE9500146D0 (sv) * 1995-01-18 1995-01-18 Abb Research Ltd Halvledarkomponent i kiselkarbid
US6498381B2 (en) * 2001-02-22 2002-12-24 Tru-Si Technologies, Inc. Semiconductor structures having multiple conductive layers in an opening, and methods for fabricating same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2840494A (en) * 1952-12-31 1958-06-24 Henry W Parker Manufacture of transistors
US2993814A (en) * 1958-05-24 1961-07-25 Foerderung Forschung Gmbh Heating conductor and method of making the same
US3300832A (en) * 1963-06-28 1967-01-31 Rca Corp Method of making composite insulatorsemiconductor wafer
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3312879A (en) * 1964-07-29 1967-04-04 North American Aviation Inc Semiconductor structure including opposite conductivity segments

Also Published As

Publication number Publication date
GB1106197A (en) 1968-03-13
NL6603854A (cg-RX-API-DMAC7.html) 1966-09-27
SE303553B (cg-RX-API-DMAC7.html) 1968-09-02
US3397448A (en) 1968-08-20
CH482303A (de) 1969-11-30
NL131898C (cg-RX-API-DMAC7.html)

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